1 www.fairchildsemi.com ?2007 fairchild semiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 fqa11n90 / fqa11n90_f109 n-channel qfet ? mosfet fqa11n90 / fqa11n90_f109 n-channel qfet ? mosfet 900 v, 11.4 a, 960 m? ? 11.4 a, 900 v, r ds(on) = 960 m? (max.) @ v gs = 10 v, id = 5.7 a ? low gate charge (typ. 72 nc) ? low crss (typ. 30 pf) ? 100% a valanche tested ? rohs compliant description this n-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar s tripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for s witched mode power supplies, active power factor c orrection (pfc), and electronic lamp ballasts. absolute maximum ratings thermal characteristics d g s to-3p symbol parameter fqa11n90 unit v dss drain-source voltage 900 v i d drain current - continuous (t c = 25c) 11.4 a - continuous (t c = 100c) 7.2 a i dm drain current - pulsed (note 1) 45.6 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 1000 mj i ar avalanche current (note 1) 11.4 a e ar repetitive avalanche energy (note 1) 30 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t c = 25c) 300 w - derate above 25c 2.38 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter fqa11n90 unit r jc thermal resistance, junction-to-case , max. 0.42 c /w r cs thermal resistance, case-to-sink , typ. 0.24 c /w r ja thermal resistance, junction-to-ambient , max. 40 c /w april 2013 features g d s
package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 15mh, i as =11.4a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 11.4a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqa11n90 fqa11n90 to-3p -- -- 30 fqa11n90 fqa11n90_f109 to-3pn -- -- 30 symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 900 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 1.0 -- v/c i dss zero gate voltage drain current v ds = 900 v, v gs = 0 v -- -- 10 a v ds = 720 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3 . 0- -5 . 0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.7 a -- 0.75 0.96 ? g fs forward transconductance v ds = 50 v, i d = 5.7 a (note 4) -- 12 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 2700 3500 pf c oss output capacitance -- 260 340 pf c rss reverse transfer capacitance -- 30 40 pf switching characteristics t d(on) turn-on delay time v dd = 450 v, i d = 11.4a, r g = 25 ? (note 4, 5) -- 65 140 ns t r turn-on rise time -- 135 280 ns t d(off) turn-off delay time -- 165 340 ns t f turn-off fall time -- 90 190 ns q g total gate charge v ds = 720 v, i d = 11.4a, v gs = 10 v (note 4, 5) -- 72 94 nc q gs gate-source charge -- 16 -- nc q gd gate-drain charge -- 35 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 11.4 a i sm maximum pulsed drain-source diode forward current -- -- 45.6 a v sd drain-source diode forward voltage v gs = 0 v, i s =11.4 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 11.4 a, di f / dt = 100 a/ s (note 4) -- 850 -- ns q rr reverse recovery charge -- 11.2 -- c 2 www.fairchildsemi.com ?2007 fairchild semiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 fqa11n90 / fqa11n90_f109 n-channel qfet ? mosfet
typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 8 16 24 32 40 0.4 0.8 1.2 1.6 2.0 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [? ], drain-source on-resistance i d , drain current [a] 0 1020304050607080 0 2 4 6 8 10 12 v ds = 450v v ds = 180v v ds = 720v note : i ? d = 11.4 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 3 www.fairchildsemi.com ?2 007 fairchild semiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 fqa11n90 / fqa1 1n90_f109 n-channel qfet ? mosfet
typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 5.7 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0 2 4 6 8 10 12 i d , drain current [a] t c , case temperature [ ] ? 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 notes : ? 1. z jc (t) = 0.42 /w max. ? 2. d uty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s q uare w ave p ulse d uration [sec] t 1 p dm t 2 4 www.fairchildsemi.com ?2007 fairchild semiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 fqa11n90 / fqa11n90_f109 n-channel qfet ? mosfet
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms 5 www.fairchildsemi.com ?2007 fairchild semiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 fqa11n90 / fqa11n90_f109 n-channel qfet ? mosfet
peak diode recovery dv/dt test circuit & waveforms 6 www.fairchildsemi.com ?2 007 fairchild semiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 fqa11n90 / fqa11n90_f109 n-channel qfet ? mosfet
mechanical dimensions dimensions in millimeters to-3p 1 www.fairchildsemi.com ?2007 fairchild s emiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 1 www.fairchildsemi.com ?2007 fairchild s emiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 7 www.fairchildsemi.com ?2007 fairchild s emiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 fqa11n90 / fqa11n90_f109 n-channel qfet ? mosfet
mechanical dimensions dimensions in millimeters to-3pn 8 www.fairchildsemi.com ?2007 fairchild semiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 fqa11n90 / fqa11n90_f109 n-channel qfet ? mosfet
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 tm ? 9 www.fairchildsemi.com ?2 007 fairchild semiconductor corporation fqa11n90 / fqa11n90_f109 rev. c0 fqa11n90 / fqa11n90_f109 n-channel qfet ? mosfet
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