'jeiisu , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BLW79 u.h.f. power transistor n-p-n silicon planar epitaxial transistor intended for transmitting applications in class-a, b or c in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 v. the resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. the transistor is housed in a '/!" capstan envelope with a ceramic cap. quick reference data r.f. performance up to tn - 25 c in an unneutralized common-emitter class-b circuit mode of operation c.w. c.w. vce v 12,5 12,5 f mhz 470 175 pl w 2 2 db > 9,0 typ. 13,5 % > 60 typ. 60 ii 3,5 + jo,4 4,2-j3,4 yl ms 28-j38 25-j24 mechanical data fig.1 sot122a. 5,9 * 5,5 r-(4x) dimensions in mm 1,52 *\ 7; 6,35 8-32unc /- f -pb 3,25 2,80 12,0 11,0 ~" -^0,14 / metal 5,6 max torque on nut: min. 0,75 nm diameter of clearance hole in heatsink: max. 4,2 mm. (7,5 kg cm) mounting hole to have no burrs at either end. max. 0,85 nm de-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. when locking is required an adhesive is preferred instead of a lock washer. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of"going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n j semi-conductors encourages customers to verify that datasheets are current before placing orders, quality semi-conductors
BLW79 ratings limiting values in accordance with the absolute maximum system (iec134) collector-emitter voltage (vgg = 0) peak value vcesm max 36 v collector-emitter voltage (open base) ^ceo max ^ v emitter-base voltage (open collector) vebo max 4v collector current (d.c.) iq max 0,5 a collector current (peak value); f> 1 mhz icm rnax 1,5 a total power dissipation (d.c. and r.f.) up to t^ = 70 c ?tqt max 8,5 w 7z77140 'c (a) 0,7 0,6 0,5 0,4 0,3 0,2 0,1 d.c. soar ?__ ? i th = 70 c > 6 7 8 9 10 w ?,- (v) 2t id prf (w) 10 5 n - r,t. power dissipat on continuous operation time operation durinc vce< 16,5v f > 1 mhz erate by 1,066 w/k s -j-4- -1 j x and she mismal >rt ch s, fig.2. 50 th ( fig.3. 100 storage temperature operating junction temperature 'stg -65 to+150 c max 200 c thermal resistance from junction to mounting base from mounting base to heatsink rth j-mb rth mb-h 14,5 k/w 0,6 k/w
BLW79 characteristics tj = 25 c breakdown voltages collector-emitter voltage vbe = 0; lc = 5 ma collector-emitter voltage open base; lc = 25 ma emitter-base voltage open collector; ie = 2 ma collector cut-off current : = 0; vce = 17 v d.c. current gain * 1c = 250 ma; vce = 5 v collector-emitter saturation voltage * lc = 750ma; ib = 150ma transition frequency at f = 500 mhz * lc = 250 ma; vce = 12,5 v lc = 750 ma; vce = 12,5v collector capacitance at f - 1 mhz ie = ie = 0; vcb -12,5 v feedback capacitance at f = 1 mhz lc = 20ma; vce = 12,5v collector-stud capacitance v(br)ces > 36 v v(br)ceo > 17 v v(br)ebo > 4v ices < 2 ma > 10 typ 35 typ 0,6 v typ 1,5 ghz typ 1,0 ghz vcesat typ 8 pf typ 3,6 pf typ 1,2 pf
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