cystech electronics corp. spec. no. : c999j3 issued date : 2015.12.26 revised date : page no. : 1/9 mtb3d0n03bj3 cystek product specification n-channel logic level enhancement mode power mosfet mtb3d0n03bj3 bv dss 30v i d @ v gs =10v, t a =25 c 17a i d @ v gs =10v, t c =25 c 69a features 3.2m v gs =10v, i d =20a r dson(typ) 4.1m v gs =4.5v, i d =20a ? single drive requirement ? low on-resistance ? fast switching characteristic ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTB3D0N03BJ3-0-T3-G to-252 (pb-free lead plating and halogen-free package) 2500 pcs / tape& reel to-252(dpak) mtb3d0n03bj3 g d s g gate d drain ssource environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c999j3 issued date : 2015.12.26 revised date : page no. : 2/9 mtb3d0n03bj3 cystek product specification absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current @ v gs =10v, t c =25 c 69 continuous drain current @ v gs =10v, t c =100c 43.6 continuous drain current @ v gs =10v, t a =25 c 17 continuous drain current @ v gs =10v, t a =70 c i d 13.6 pulsed drain current i dm 276 *1 single pulse avalanche current i as 46 a avalanche energy @ l=0.1mh, i d =46a, v dd =15v e as 106 *3 repetitive avalanche energy @ l=0.05mh e ar 3.6 mj t c =25 42 t c =100 p d 16.8 t a =25 2.5 *2 total power dissipation t a =70 p dsm 1.6 *2 w operating junction and storage temp erature range tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 3 thermal resistance, junction-to-ambient, max r ja 50 *2 c/w note : 1. pulse width limited by maximum junction temperature. 2. surface mounted on a 1 in2 pad of 2oz copper. in practice r th,j-a will be determined by customer?s pcb characteristics. 125 c/w when mounted on a minimum pad of 2 oz. copper. 3. 100% tested by conditions of l=0.1mh, i as =30a, v gs =10v, v dd =15v, rated 30v characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v gs =0v, i d =250 a v gs(th) 1 - 2.5 v v ds = v gs , i d =250 a g fs *1 - 21.7 - s v ds =10v, i d =20a i gss - - 100 na v gs = 20v - - 1 v ds =30v, v gs =0v i dss - - 10 a v ds =24v, v gs =0v, tj=85 c - 3.2 4.0 v gs =10v, i d =20a r ds(on) *1 - 4.1 5.5 m v gs =4.5v, i d =20a dynamic ciss - 2269 - coss - 396 - crss - 193 - pf v ds =15v, v gs =0v, f=1mhz
cystech electronics corp. spec. no. : c999j3 issued date : 2015.12.26 revised date : page no. : 3/9 mtb3d0n03bj3 cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions qg *1, 2 48.8 qgs *1, 2 8 qgd *1, 2 10.5 nc v ds =15v, v gs =10v, i d =20a t d(on) *1, 2 - 17 - tr *1, 2 - 18.8 - t d(off) *1, 2 - 53.8 - t f *1, 2 - 13.4 - ns v ds =15v, i d =20a, v gs =10v, r gs =3 rg - 1.2 - f=1mhz source-drain diode i s *1 - - 64 i sm *3 - - 256 a v sd *1 - 0.81 1.2 v i s =20a, v gs =0v trr - 18 - ns qrr - 10 - nc i f =20a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint
cystech electronics corp. spec. no. : c999j3 issued date : 2015.12.26 revised date : page no. : 4/9 mtb3d0n03bj3 cystek product specification typical characteristics typical output characteristics 0 20 40 60 80 100 120 140 160 180 200 012345 vds, drain-source voltage(v) i d , drain current (a) 10v,9v,8v,7v,6v v gs =3v 4v 4. 5v 3.5v 5v brekdown voltage vs junction temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 024681 0 drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =20a r dson @ tj=25c : 3.2 m typ v gs =4.5v, i d =20a r dson @ tj=25c : 4.1m typ v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =20a
cystech electronics corp. spec. no. : c999j3 issued date : 2015.12.26 revised date : page no. : 5/9 mtb3d0n03bj3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10v v ds =15v gate charge characteristics 0 2 4 6 8 10 0 6 12 18 24 30 36 42 48 54 60 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =20a v ds =15v maximum safe operating area 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) t c =25c, tj=150c v gs =10v, r jc =3c/w single pulse dc 100ms r dson limited 10 s 1ms 100 s 10ms 1 s maximum drain current vs case temperature 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =3c/w
cystech electronics corp. spec. no. : c999j3 issued date : 2015.12.26 revised date : page no. : 6/9 mtb3d0n03bj3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 20 40 60 80 100 120 140 160 180 200 0246810 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to case 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 0.0001 0.001 0.01 0.1 1 10 pulse width(s) power (w) t j(max) =150c t c =25c r jc =3c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =3 c/w
cystech electronics corp. spec. no. : c999j3 issued date : 2015.12.26 revised date : page no. : 7/9 mtb3d0n03bj3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c999j3 issued date : 2015.12.26 revised date : page no. : 8/9 mtb3d0n03bj3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. issued date : 2015.12.26 revised date : page no. : 9/9 spec. no. : c999j3 mtb3d0n03bj3 cystek product specification to-252 dimension inches marking: device n ame date code b3d0 n03b 1 2 3 4 style: pin 1.gate 2.drain 3.source 4.drain 3-lead to-252 plastic surface mount package cystek package code: j3 millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386 a1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772 b 0.039 0.048 0.990 1.210 h 0.163 ref 4.140 ref b 0.026 0.034 0.660 0.860 k 0.190 ref 4.830 ref b1 0.026 0.034 0.660 0.860 l 0.386 0.409 9.800 10.400 c 0.018 0.023 0.460 0.580 l1 0.114 ref 2.900 ref c1 0.018 0.023 0.460 0.580 l2 0.055 0.067 1.400 1.700 d 0.256 0.264 6.500 6.700 l3 0.024 0.039 0.600 1.000 d1 0.201 0.215 5.100 5.460 p 0.026 ref 0.650 ref e 0.236 0.244 6.000 6.200 v 0.211 ref 5.350 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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