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hexfet power mosfet notes through are on page 8 features and benefits applications ? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications ? boost converters features benefits pqfn 5x6 mm v ds 75 v r ds(on) max (@v gs = 10v) 5.9 m ? q g (typical) 65 nc r g (typical) 1.2 ? i d (@t mb = 25c) 100 a low r dson ( 5.9m ? ) lower conduction losses low thermal resistance to pcb ( 0.8c/w) enables better thermal dissipation 100% rg tested increased reliability low profile ( 0.9 mm ) results in increased power densit y industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t mb = 25c continuous drain current, v gs @ 10v i d @ t mb = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t mb = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range 13 100 -55 to + 150 3.6 0.029 156 v w a c max. 1788 400 20 75

form quantit y irfh5007pbf pqfn 5mm x 6mm tape and reel 4000 IRFH5007TRPBF base part number package type standard pac k orderable part number downloaded from: http:///
irfh5007pbf

s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 75 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.09 CCC v/c r ds(on) static drain-to-source on-resistance CCC 5.1 5.9 v gs(th) gate threshold voltage 2.0 CCC 4.0 v ? v gs(th) gate threshold voltage coefficient CCC -8.4 CCC mv/c i dss drain-to-source leakage current CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 100 CCC CCC s q g total gate charge CCC 65 98 q gs1 pre-vth gate-to-source charge CCC 11 CCC q gs2 post-vth gate-to-source charge CCC 4.5 CCC q gd gate-to-drain charge CCC 20 CCC q godr gate charge overdrive CCC 29.5 CCC see fig.17 & 18 q sw switch char g e (q gs2 + q gd ) CCC 24.5 CCC q oss output charge CCC 21 CCC nc r g gate resistance CCC 1.2 CCC ? t d(on) turn-on delay time CCC 10 CCC t r rise time CCC 14 CCC t d(off) turn-off delay time CCC 30 CCC t f fall time CCC 11 CCC c iss input capacitance CCC 4290 CCC c oss output capacitance CCC 510 CCC c rss reverse transfer capacitance CCC 210 CCC avalanche characteristics parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 31 47 ns q rr reverse recovery charge CCC 170 255 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 150a a 100 CCC CCC 400 CCC CCC na ns pf nc conditions see fig.15 max. 250 50 ? = 1.0mhz v ds = 38v CCC conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 50a mosfet symbol v ds = 16v, v gs = 0v v dd = 38v, v gs = 10v i d = 50a v gs = 0v v ds = 25v v gs = 20v v gs = -20v v ds = 75v, v gs = 0v t j = 25c, i f = 50a, v dd = 38v di/dt = 500a/s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 10v typ. CCC r g =1.8 ? v ds = 15v, i d = 50a v ds = 75v, v gs = 0v, t j = 125c m ? a i d = 50a thermal resistance parameter typ. max. units r jc-mb junction-to-mounting base 0.5 0.8 r jc (top) junction-to-case CCC 15 c/w r ja junction-to-ambient CCC 35 r ja (<10s) junction-to-ambient CCC 22 downloaded from: http:///
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 25v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 8.0v 6.0v 5.0v 4.5v 4.25v 4.0v bottom 3.75v 60s pulse width tj = 25c 3.75v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.75v 60s pulse width tj = 150c vgs top 10v 8.0v 6.0v 5.0v 4.5v 4.25v 4.0v bottom 3.75v 0 2 04 06 08 01 0 0 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds = 15v i d = 50a 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss downloaded from: http:///
irfh5007pbf

fig 11. maximum effective transient thermal impedance, junction-to-mounting base fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 500a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) limited by package 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc downloaded from: http:///
irfh5007pbf

fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 2 4 6 8 10 12 14 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 1000 1100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.6a 13a bottom 50a fig 14. typical avalanche current vs. pulsewidth 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) downloaded from: http:///
irfh5007pbf

fig 15. !" !# $%&' for n-channel hexfet power mosfets fig 18a. gate charge test circuit fig 18b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 17a. switching time test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
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? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period (
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xxxx xywwx xxxxx international rectifier logo part number marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "b" package detailspqfn 5x6 outline "b" part marking !"#$ %& ' &(())) ('# ( (# $% * '+ !"#,& ' &(())) ('# ( (# , downloaded from: http:///
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* qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.20mh, r g = 25 ? , i as = 50a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production testcapability. pqfn 5x6 outline "b" tape and reel

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- ms l 1 (per je de c j-s t d-020d ?? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial (per jedec jes d47f ?? guidelines ) downloaded from: http:///

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