View IRF7478QPBF_8550412.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com 1 06/27/14 IRF7478QPBF hexfet power mosfet parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 7.0 i d @ t a = 70c continuous drain current, v gs @ 10v 5.6 a i dm pulsed drain current 56 p d @t a = 25c power dissipation 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 3.7 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes through are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a v dss r ds(on) max (m i d 60v 26@v gs = 10v 4.2a 30@v gs = 4.5v 3.5a symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance advanced process technology ultra low on-resistance n channel mosfet surface mount available in tape & reel 150c operating temperature lead-free description these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. this surface mount so-8 can dramatically reduce board space and is also available in tape & reel. form quantity irf7478qtrpbf so-8 tape and reel 4000 eol 529 IRF7478QPBF so-8 tube 95 eol 529 IRF7478QPBF please search the eol part number on ir?s website for guidance base part number package type standard pack eol notice orderable part number replacement part number

IRF7478QPBF 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 17 ??? ??? s v ds = 50v, i d = 4.2a q g total gate charge ??? 21 31 i d = 4.2a q gs gate-to-source charge ??? 4.3 ??? nc v ds = 48v q gd gate-to-drain ("miller") charge ??? 9.6 ??? v gs = 4.5v t d(on) turn-on delay time ??? 7.7 ??? v dd = 30v t r rise time ??? 2.6 ??? i d = 4.2a t d(off) turn-off delay time ??? 44 ??? r g = 6.2 t f fall time ??? 13 ??? v gs = 10v c iss input capacitance ??? 1740 ??? v gs = 0v c oss output capacitance ??? 300 ??? v ds = 25v c rss reverse transfer capacitance ??? 37 ??? pf ? = 1.0mhz c oss output capacitance ??? 1590 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 220 ??? v gs = 0v, v ds = 48v, ? = 1.0mhz c oss eff. effective output capacitance ??? 410 ??? v gs = 0v, v ds = 0v to 48v dynamic @ t j = 25c (unless otherwise specified) ns s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source c urrent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 4.2a, v gs = 0v t rr reverse recovery time ??? 52 78 ns t j = 25c, i f = 4.2a q rr reverse recoverycharge ??? 100 150 nc di/dt = 100a/ s diode characteristics 2.3 56 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250 a v (br)dss / t j breakdown voltage temp. coefficient ??? 0.065 ??? v/c reference to 25c, i d = 1ma ??? 20 26 v gs = 10v, i d = 4.2a ??? 23 30 v gs = 4.5v, i d = 3.5a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250 a ??? ??? 20 a v ds = 48v, v gs = 0v ??? ??? 100 v ds = 48v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m symbol parameter typ. max. units e as single pulse avalanche energy ??? 140 mj i ar avalanche current ??? 4.2 a
IRF7478QPBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 7.0a 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 25v 20 s pulse width
IRF7478QPBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 10 20 30 40 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.2a v = 12v ds v = 30v ds v = 48v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
IRF7478QPBF www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) i , drain current (a) c d
IRF7478QPBF 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.9a 3.4a 4.2a 0 102030405060 i d , drain current (a) 0.016 0.018 0.020 0.022 0.024 0.026 0.028 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 10v v gs = 4.5v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.01 0.02 0.03 0.04 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 7.0a
IRF7478QPBF www.irf.com 7 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx internat ional rectifier logo f 7101 y = last digit of the year part number lot code ww = we e k e x amp l e : t h i s i s an i r f 7 10 1 (mos f e t ) p = de s i gnat e s l e ad- f r e e product (opt ional) a = assembly site code notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/
IRF7478QPBF 8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) for the most current drawing please refer to ir website at http://www.irf.com/package/
IRF7478QPBF www.irf.com 9 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 16mh r g = 25 , i as = 4.2a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss i sd 4.2a, di/dt 160a/ s, v dd v (br)dss , t j 150c ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. msl1 (per jedec j-std-020d ?? ) rohs compliant qualification information ? qualification level industrial ? (per jedec jesd47f ?? guidelines) yes moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

▲Up To Search▲

Price & Availability of IRF7478QPBF

	To Download IRF7478QPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .