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  bcr3km-12la features ? i t (rms) : 3 a ? v drm : 600 v ? i fgti , i rgti , i rgt : 20 ma (10 ma) note5 ? viso : 2000 v ? insulated type ? planar passivation type ? ul recognized : yellow card no. e223904 file no. e80271 outline 2 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal to-220fn 1 3 2 applications switching mode power supply, small motor control, heater control, solenoid driver, and other general controlling devices maximum ratings voltage class parameter symbol 12 unit repetitive peak off-state voltage note1 v drm 600 v non-repetitive peak off-state voltage note1 v dsm 720 v www.kersemi.com
bcr3km-12la parameter symbol ratings unit conditions rms on-state current i t (rms) 3 a commercial frequency, sine full wave 360 conduction, tc = 109 c surge on-state current i tsm 30 a 60hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t3.7a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 3w average gate power dissipation p g (av) 0.3 w peak gate voltage v gm 6v peak gate current i gm 0.5 a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 2.0 g typical value isolation voltage viso 2000 v ta = 25 c, ac 1 minute, t 1 t 2 g terminal to case notes: 1. gate open. electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 125 c, v drm applied on-state voltage v tm ? ? 1.5 v tc = 25 c, i tm = 4.5 a, instantaneous measurement v fgt ??1.5v ? v rgt ??1.5v gate trigger voltage note2 ?? v rgt ?? ??1.5v tj = 25 c, v d = 6 v, r l = 6 ? , r g = 330 ? i fgt ??20 note5 ma ? i rgt ??20 note5 ma gate trigger current note2 ?? i rgt ?? ??20 note5 ma tj = 25 c, v d = 6 v, r l = 6 ? , r g = 330 ? gate non-trigger voltage v gd 0.2 ? ? v tj = 125 c, v d = 1/2 v drm thermal resistance r th (j-c) ??4.0 c/w junction to case note3 critical-rate of rise of off-state commutating voltage note4 (dv/dt)c 5 ? ? v/ s tj = 125 c notes: 2. measurement using the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5c/w. 4. test conditions of the critical-rate of rise of off- state commutating voltage is shown in the table below. 5. high sensitivity (i gt 10 ma) is also available. (i gt item: 1) test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125 c 2. rate of decay of on -state commutating current (di/dt)c = ?1.5 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c www.kersemi.com
bcr3km-12la performance curves maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 2 10 1 10 0 10 ?1 5 7 2 3 5 7 2 3 5 7 2 3 10 0 10 1 10 2 37 25 37 25 40 30 20 0 5 10 15 25 35 10 2 7 5 3 2 7 5 3 2 7 5 3 2 10 1 10 0 10 ?1 ?60 ?40?20 0 20 40 60 80 100 120 140 23 5710 1 10 0 23 5710 2 23 57 10 3 ?60 ?40?20 0 20 40 60 80 100 120 140 10 3 7 5 3 2 7 5 3 2 10 2 10 1 10 3 7 5 3 2 7 5 3 2 10 2 10 1 23 5710 0 10 ?1 23 57 23 5710 3 23 57 10 1 23 5710 2 10 2 0 1.5 1.0 0.5 2.5 2.0 4.5 4.0 3.5 3.0 5.0 tj = 25c typical example i rgt iii i fgt i , i rgt i p g(av) = 0.3w p gm = 3w v gt i rgt i i fgt i , i rgt iii v gd = 0.2v i gm = 0.5a typical example www.kersemi.com
bcr3km-12la maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (c/w) conduction time (cycles at 60hz) on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature (c) rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature 0 1.5 1.0 0.5 2.5 2.0 4.5 4.0 3.5 3.0 5.0 0 0.5 1.0 1.5 2.0 4.0 3.0 2.5 3.5 10 3 10 ?1 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 23 57 23 57 23 57 23 57 10 4 10 2 10 1 10 5 10 3 0 0.5 1.0 1.5 2.0 2.5 3.0 4.0 3.5 0 20 40 80 60 100 120 140 160 0 20 40 80 60 100 120 140 160 01.5 1.0 0.5 2.0 2.5 3.0 10 5 7 5 3 2 7 5 3 2 7 5 3 2 10 4 10 3 10 2 ?60 ?40?20 0 20 40 60 80 100 120 140 0 0.5 1.0 1.5 2.0 4.0 3.0 2.5 3.5 0 20 40 80 60 100 120 140 160 no fins 360 conduction resistive, inductive loads curves apply regardless of conduction angle 360 conduction resistive, inductive loads curves apply regardless of conduction angle resistive, inductive loads natural convection all fins are black painted aluminum and greased 60 60 t2.3 100 100 t2.3 120 120 t2.3 natural convection no fins curves apply regardless of conduction angle resistive, inductive loads typical example www.kersemi.com
bcr3km-12la holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width ( s) gate trigger current vs. gate current pulse width ?60 ?40?20 0 20 40 60 80 100 120 140 ?60 ?40?20 0 20 40 60 80 100 120 140 10 3 7 5 3 2 7 5 3 2 10 2 10 1 10 3 7 5 3 2 7 5 3 2 7 5 3 2 10 2 10 1 10 0 2 3 5 7 2 3 5 7 7 10 1 10 0 23 5710 2 10 1 23 5710 3 23 5710 4 0 20 40 80 60 100 120 160 140 10 3 7 5 3 2 7 5 3 2 10 2 10 1 10 0 10 1 10 2 37 25 37 25 10 0 10 1 10 2 37 25 37 2 5 ?60 ?40?20 0 20 40 60 80 100 120 140 0 20 40 80 60 100 120 140 160 typical example typical example distribution t 2 + , g ? typical example t 2 + , g + t 2 ? , g ? typical example typical example tj = 125c iii quadrant i quadrant typical example i rgt iii i rgt i i fgt i main voltage main current i t (di/dt)c v d time time (dv/dt)c typical example tj = 125c i t = 4a = 500 s v d = 200v f = 3hz iii quadrant i quadrant minimum characteristics value www.kersemi.com
bcr3km-12la test procedure i test procedure iii test procedure ii gate trigger characteristics test circuits 330 ? 330 ? 330 ? 6 ? 6 ? 6v 6v a v a v 6 ? 6v a v www.kersemi.com
bcr3km-12la package dimensions to-220fn eiaj package code jedec code mass (g) (reference value) lead material ? ? 0.3 15 0.3 14 0.5 3 0.3 3.6 0.3 2.54 0.25 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 6.5 0.3 2.6 0.2 4.5 0.2 2.8 0.2 0.75 0.15 0.2 note 1) the dimensional figures indicate representative values unless otherwise the tolerance is specified. order code lead form standard packing quantity standard order code standard order code example straight type plastic magazine (tube) 50 type name bcr3km-12la lead form plastic magazine (tube) 50 type name ? lead forming code BCR3KM-12LA-A8 note : please confirm the specificat ion about the shipping in detail. www.kersemi.com


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