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insulated gate bipolar transistor withultrafast soft recovery diode IRG7PH30K10Dpbf 1 www.irf.com 08/14/09 e g n-channel c v ces = 1200v i c = 16a, t c = 100c t sc 10s, t j(max) = 150c v ce(on) typ. = 2.05v features low v ce (on) trench igbt technology low switching losses 10 s short circuit soa square rbsoa 100% of the parts tested for i lm positive v ce (on) temperature co-efficient ultra fast soft recovery co-pak diode tight parameter distribution lead free package benefits high efficiency in a wide range of applications suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses rugged transient performance for increased reliability excellent current sharing in parallel operation gc e gate collector emitter g c e to-247ac c absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 30 i c @ t c = 100c continuous collector current 16 i nominal nominal current 9.0 i cm pulse collector current, vge = 15v 27 a i lm clamped inductive load current, vge = 20v 36 i f @ t c = 25c diode continous forward current 30 i f @ t c = 100c diode continous forward current 16 i fm diode maximum forward current 36 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 180 w p d @ t c = 100c maximum power dissipation 71 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 0.70 r jc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 1.44 c/w r cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ja thermal resistance, junction-to-ambient (typical socket mount) CCC 40 CCC downloaded from: http:///
IRG7PH30K10Dpbf 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 36h, r g = 33 . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j of approximately 90c. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v, i c = 250a ct6 ? v (br)ces / ? t j temperature coeff. of breakdown voltage 1 . 1 1v / c v ge = 0v, i c = 1ma (25c-150c) ct6 v ce(on) collector-to-emitter saturation voltage 2.05 2.35 i c = 9.0a, v ge = 15v, t j = 25c 5,6,7 2 . 5 6 v i c = 9.0a, v ge = 15v, t j = 150c 9,10,11 v ge(th) gate threshold voltage 5.0 7.5 v v ce = v ge , i c = 400a 9,10 ? v ge(th) / ? tj threshold voltage temp. coefficient -15 mv/c v ce = v ge , i c = 400a (25c - 150c) 11,12 gfe forward transconductance 6.2 s v ce = 50v, i c = 9.0a, pw = 80s i ces collector-to-emitter leakage current 1.0 25 a v ge = 0v, v ce = 1200v 4 0 0 v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop 2.0 3.0 v i f = 9.0a 8 2 . 1 i f = 9.0a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) 45 68 i c = 9.0a 24 q ge gate-to-emitter charge (turn-on) 8.7 13 nc v ge = 15v ct1 q gc gate-to-collector charge (turn-on) 20 30 v cc = 600v e on turn-on switching loss 530 760 i c = 9.0a, v cc = 600v, v ge = 15v ct4 e off turn-off switching loss 380 600 j r g = 22 , l = 1.0mh, l s = 150nh, t j = 25c e total total switching loss 910 1360 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 14 31 i c = 9.0a, v cc = 600v, v ge = 15v ct4 t r rise time 24 41 ns r g = 22 , l = 1.0mh, l s = 150nh, t j = 25c t d(off) turn-off delay time 110 130 t f fall time 38 56 e on turn-on switching loss 810 i c = 9.0a, v cc = 600v, v ge =15v 13,15 e off turn-off switching loss 680 j r g =22 , l=1.0mh, l s =150nh, t j = 150c ct4 e total total switching loss 1490 energy losses include tail & diode reverse recovery wf1, wf2 t d(on) turn-on delay time 11 i c = 9.0a, v cc = 600v, v ge = 15v 14,16 t r rise time 23 ns r g = 22 , l = 1.0mh, l s = 150nh ct4 t d(off) turn-off delay time 130 t j = 150c wf1 t f fall time 260 wf2 c ies input capacitance 1070 pf v ge = 0v 23 c oes output capacitance 63 v cc = 30v c res reverse transfer capacitance 26 f = 1.0mhz t j = 150c, i c = 36a 4 rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v ct2 rg = 22 , v ge = +20v to 0v scsoa short circuit safe operating area 10 s t j = 150c, v cc = 600v, vp =1200v 22, ct3 rg = 22 , v ge = +15v to 0v wf4 erec reverse recovery energy of the diode 710 j t j = 150c 17,18,19 t rr diode reverse recovery time 140 ns v cc = 600v, i f = 9.0a 20,21 i rr peak reverse recovery current 12 a v ge = 15v, rg = 20 , l =1.0mh, l s = 150nh wf3 conditions downloaded from: http:///
IRG7PH30K10Dpbf www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 150c; v ge =15v fig. 4 - reverse bias soa t j = 150c; v ge = 20v 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 p t o t ( w ) 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 i c ( a ) 10 100 1000 10000 v ce (v) 1 10 100 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse dc 1msec fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s 024681 0 v ce (v) 0 10 20 30 40 50 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 024681 0 v ce (v) 0 10 20 30 40 50 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v downloaded from: http:///
IRG7PH30K10Dpbf 4 www.irf.com fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s fig. 8 - typ. diode forward characteristics tp = 80s fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c 024681 0 v ce (v) 0 10 20 30 40 50 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 5 1 01 52 0 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 4.5a i ce = 9.0a i ce = 18a 5 1 01 52 0 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 4.5a i ce = 9.0a i ce = 18a fig. 11 - typical v ce vs. v ge t j = 150c fig. 12 - typ. transfer characteristics v ce = 50v 4 6 8 10 12 14 16 v ge , gate-to-emitter voltage (v) 0 10 20 30 40 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 150c 5 1 01 52 0 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 4.5a i ce = 9.0a i ce = 18a 0.0 1.0 2.0 3.0 4.0 5.0 v f (v) 0 10 20 30 40 50 i f ( a ) -40c 25c 150c downloaded from: http:///
IRG7PH30K10Dpbf www.irf.com 5 fig. 13 - typ. energy loss vs. i c t j = 150c; l = 1.0mh; v ce = 600v, r g = 22 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l = 1.0mh; v ce = 600v, i ce = 9.0a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l = 1.0mh; v ce = 600v, i ce = 9.0a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 150c; l = 1.0mh; v ce = 600v, r g = 22 ; v ge = 15v 5 1 01 52 0 i c (a) 0 400 800 1200 1600 2000 e n e r g y ( j ) e off e on 0 5 10 15 20 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 r g ( ) 400 600 800 1000 1200 1400 1600 e n e r g y ( j ) e on e off fig. 17 - typ. diode i rr vs. i f t j = 150c fig. 18 - typ. diode i rr vs. r g t j = 150c 4 6 8 10 12 14 16 18 20 i f (a) 6 8 10 12 14 16 18 i r r ( a ) r g = 5.0 r g = 10 r g = 20 r g = 47 0 10 20 30 40 50 r g ( ) 8 10 12 14 16 18 i r r ( a ) 0 20 40 60 80 100 r g ( ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on downloaded from: http:///
IRG7PH30K10Dpbf 6 www.irf.com fig. 19 - typ. diode i rr vs. di f /dt v cc = 600v; v ge = 15v; i f = 9.0a; t j = 150c fig. 20 - typ. diode q rr vs. di f /dt v cc = 600v; v ge = 15v; t j = 150c fig. 21 - typ. diode e rr vs. i f t j = 150c fig. 22 - v ge vs. short circuit time v cc = 600v; t c = 150c 8 1 01 21 41 6 v ge (v) 8 16 24 32 40 48 t i m e ( s ) 10 20 30 40 50 60 c u r r e n t ( a ) t sc i sc 0 100 200 300 400 di f /dt (a/s) 8 10 12 14 16 18 i r r ( a ) 0 5 10 15 20 i f (a) 400 600 800 1000 1200 e n e r g y ( j ) r g = 5.0 r g = 10 r g = 20 r g = 47 fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 9.0a; l = 600h 0 100 200 300 400 500 v ce (v) 1 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 1 02 03 04 05 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 0 100 200 300 400 di f /dt (a/s) 1000 1500 2000 2500 3000 q r r ( n c ) 5.0 10 47 20 9.0a 18a 4.5a downloaded from: http:///
IRG7PH30K10Dpbf www.irf.com 7 fig 25. maximum transient thermal impedance, junction-to-case (igbt) fig. 26. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0107 0.0000050.1816 0.000099 0.3180 0.001305 0.1910 0.009113 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0103 0.0000050.4761 0.000451 0.5749 0.001910 0.3390 0.012847 downloaded from: http:///
IRG7PH30K10Dpbf 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit dc 4x dut vcc scsoa fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v downloaded from: http:///
IRG7PH30K10Dpbf www.irf.com 9 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 -900 -800 -700 -600 -500 -400 -300 -200 -100 0 100 -2.50 0.00 2.50 5.00 time (s) v f (v) -12.5 -10 -7.5 -5 -2.5 0 2.5 5 7.5 10 12.5 i f (a) peak i rr t rr q rr 10% peak irr -100 0 100 200 300 400 500 600 700 800 900 -5 0 5 10 time(s) v ce (v) -2 0 2 4 6 8 10 12 14 16 18 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 700 800 -5 0 5 10 time (us) vce (v) -10 0 10 20 30 40 50 60 70 80 ice (a) ic e vce -100 0 100 200 300 400 500 600 700 800 900 -1.8 -0.8 0.2 1.2 2.2 3.2 time (s) v ce (v) -5 0 5 10 15 20 25 30 35 40 45 i ce (a) test current 90% test current 5% v ce 10% test current tr eon lo s s downloaded from: http:///
IRG7PH30K10Dpbf 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2009 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on irs web site.

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