DSEP2X31-12A ns hiperfred symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 200 i a v f 2.72 r 1.15 k/w v r = min. 30 t = 10 ms applications: v rrm v 1200 250 t vj vc = t vj c =ma 1 package: part number v r = t vj =c i f =a v t c = 70c d = p tot 100 w t c c = t vj 150 c -40 v i rrm = = 1200 30 30 t vj = 45c DSEP2X31-12A v a 1200 v 1200 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 3.24 t vj c =25 c j j unction capacitance v = v; t 150 v f0 v 1.31 t vj = 150c r f 15.4 f = 1 mhz = c 25 m ? v 1.77 t vj =c i f =a v 30 2.26 i f =a 60 i f =a 60 2x threshold voltage slope resistance for power loss calculation only backside: isolated 13 a t vj =c reverse recovery time a 24 40 150 ns (50 hz), sine t rr = 40 ns housing: high performance fast recovery diode low loss and soft recovery parallel legs sot-227b (minibloc) max. reverse recovery current i f =a; 30 25 t= 125c vj -di f =a/s 400 /dt t rr v r =v 800 t vj =c 25 t= 125c vj a 12 600 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 150 ixys reserves the right to change limits, conditions and dimensions. ? 20110531b data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
DSEP2X31-12A 10.5 3.2 8.6 6.8 i rms a per terminal 100 r thch k/w 0.10 m d nm 1.5 mounting torque 1.1 t stg c 150 storage temperature -40 weight g 30 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit ordering delivering mode base qty code key standard part name DSEP2X31-12A 473286 tube 10 abcde yyww z xxxxxx product marking logo part no. datecode assembly code assembly line marking on product DSEP2X31-12A m t nm 1.5 terminal torque 1.1 v isol v 3000 t = 1 second v 2500 t = 1 minute isolation voltage d spp/app mm mm creepage | striking distance on surface | through air terminal to terminal d spb/apb creepage | striking distance on surface | through air terminal to backside ixys reserves the right to change limits, conditions and dimensions. ? 20110531b data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
DSEP2X31-12A outlines sot-227b (minibloc) ixys reserves the right to change limits, conditions and dimensions. ? 20110531b data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
DSEP2X31-12A 200 600 1000 0 400 800 120 140 160 180 200 220 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 200 600 1000 0 400 800 0 10 20 30 40 50 60 0 0 0 1 0 0 1 0 1 2 3 4 5 0123 4 0 10 20 30 40 50 60 70 2 k f t vj [c] t [s] v fr [v] i rm [a] q r [c] i f [a] v f [v] -di f /dt [a/s] t rr [ns] z thjc [k/w] v fr t rr fig. 1 forward current i f vs. v f fig. 2 typ. reverse recovery charge q r versus -di f /dt fig. 3 typ. peak reverse current i rm versus -di f /dt fig. 4 dynamic parameters q r ,i rm versus t vj fig. 5 typ. recovery time t rr vs. -di f /dt fig. 6 typ. peak forward voltage v fr and t fr versus di f /dt fig. 7 transient thermal impedance junction to case t rr [s] t vj = 150c 100c 25c i f =60a 30 a 15 a i f =60a 30 a 15 a i rm q r i f =60a 30 a 15 a constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.368 0.0052 2 0.1417 0.0003 3 0.0295 0.0004 4 0.5604 0.0092 t vj =125c v r =800v t vj =125c v r =800v -di f /dt [a/s] t vj = 125c v r = 800 v -di f /dt [a/s] -di f /dt [a/s] t vj = 125c i f = 30 a ixys reserves the right to change limits, conditions and dimensions. ? 20110531b data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
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