View ACT108-800E_8439982.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

t o - 9 2 ACT108-800E ac thyristor power switch 13 march 2014 product data sheet scan or click this qr code to view the latest information for this product 1. general description ac thyristor power switch in a sot54 (to-92) plastic package with self-protective capabilities against low and high energy transients. 2. features and benefits ? exclusive negative gate triggering ? full cycle ac conduction ? remote gate separates the gate driver from the effects of the load current ? safe clamping of low energy over-voltage transients ? high voltage capability ? self-protective turn-on during high energy voltage transients ? very high noise immunity 3. applications ? fan motor circuits ? pump motor circuits ? lower-power highly inductive, resistive and safety loads 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v drm repetitive peak off- state voltage - - 800 v i tsm non-repetitive peak on- state current full sine wave; t j(init) = 25 c; t p = 20 ms; fig. 4 ; fig. 5 - - 13 a t j junction temperature - - 125 c i t(rms) rms on-state current full sine wave; t lead 75 c; fig. 1 ; fig. 2 ; fig. 3 - - 0.8 a v pp peak pulse voltage t j = 25 c; non-repetitive, off-state; ten pulses on each voltage polarity; 20s or more between successive pulses; fig. 6 - - 2.5 kv
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 2 / 13 symbol parameter conditions min typ max unit static characteristics v d = 12 v; i t = 100 ma; ld+ g-; t j = 25 c; fig. 8 1 - 10 ma i gt gate trigger current v d = 12 v; i t = 100 ma; ld- g-; t j = 25 c; fig. 8 1 - 10 ma v cl clamping voltage i cl = 0.1 ma; t p = 1 ms; t j = 25 c 850 - - v dynamic characteristics dv d /dt rate of rise of off-state voltage v dm = 536 v; t j = 125 c; (v dm = 67% of v drm ); exponential waveform; gate open circuit; fig. 13 500 - - v/s di com /dt rate of change of commutating current v d = 400 v; t j = 125 c; i t(rms) = 0.8 a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; fig. 14 ; fig. 15 0.5 - - a/ms 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 cm common 2 g gate 3 ld load 1 2 3 to-92 (sot54) 0 0 1 a a j 9 2 4 g c m l d 6. ordering information table 3. ordering information package type number name description version ACT108-800E to-92 plastic single-ended leaded (through hole) package; 3 leads sot54
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 3 / 13 7. limiting values table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v drm repetitive peak off-state voltage - 800 v i t(rms) rms on-state current full sine wave; t lead 75 c; fig. 1 ; fig. 2 ; fig. 3 - 0.8 a full sine wave; t j(init) = 25 c; t p = 20 ms; fig. 4 ; fig. 5 - 13 a i tsm non-repetitive peak on-state current full sine wave; t j(init) = 25 c; t p = 16.7 ms - 14.3 a i 2 t i 2 t for fusing t p = 10 ms; sine-wave pulse - 0.84 a 2 s di t /dt rate of rise of on-state current i t = 1 a; i g = 20 ma; di g /dt = 0.2 a/s - 100 a/s i gm peak gate current t = 20 s - 1 a v gm peak gate voltage positive applied gate voltage - 15 v p g(av) average gate power over any 20 ms period - 0.1 w t stg storage temperature -40 150 c t j junction temperature - 125 c v pp peak pulse voltage t j = 25 c; non-repetitive, off-state; ten pulses on each voltage polarity; 20s or more between successive pulses; fig. 6 - 2.5 kv t lead (c) -50 150 100 0 5 0 aaa-01 1238 0.4 0.6 0.2 0.8 1 i t(rms) (a) 0 7 5 c fig. 1. rms on-state current as a function of lead temperature; maximum values aaa-01 1239 5 1 0 1 5 i t(rms) (a) 0 surge duration (s) 1 0 - 2 1 0 1 1 0 - 1 f = 50 hz; t lead = 75 c fig. 2. rms on-state current as a function of surge duration; maximum values
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 4 / 13 aaa-01 1240 0.4 0.6 0.2 0.8 1.0 p tot (w) 0 i t(rms) (a) 0 1 0.8 0.4 0.6 0.2 conduction angle (degrees) form factor a 3 0 6 0 9 0 120 180 4 2.8 2.2 1.9 1.57 t lead(max) (c) 120 9 0 6 0 3 0 = 180 125 1 1 3 101 8 9 7 7 6 5 = conduction angle a = form factor = i t(rms) /i t(av) fig. 3. total power dissipation as a function of rms on-state current; maximum values aaa-01 1241 1 1 0 1 0 2 1 0 3 number of cycles (n) 0 3 9 1 2 1 5 i tsm ( a ) 6 i tsm t i t t j(init) = 25 c max 1/f f = 50 hz fig. 4. non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 5 / 13 aaa-01 1242 t p (s) 1 0 - 5 1 0 - 1 1 0 - 2 1 0 - 4 1 0 - 3 1 0 2 1 0 1 0 3 i tsm (a) 1 i tsm t i t t j(init) = 25 c max t p (1) t p 20 ms (1) di t /dt limit fig. 5. non-repetitive peak on-state current as a function of pulse width; maximum values l r 220 r g dut load model 2 r gen ac mains filtering unit iec 61000-4-5 standards surge generator 150 5 h aaa-011243 fig. 6. test circuit for inductive and resistive loads with conditions equivalent to iec 61000-4-5
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 6 / 13 8. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-lead) thermal resistance from junction to lead full cycle with heatsink compound; fig. 7 - - 60 k/w r th(j-a) thermal resistance from junction to ambient full cycle; printed-circuit board mounted; lead length 4 mm - 150 - k/w aaa-01 1244 1 1 0 - 1 1 0 1 0 2 z th(j-lead) (k/w) 1 0 - 2 t p (s) 1 0 - 5 1 1 0 1 0 - 1 1 0 - 2 1 0 - 4 1 0 - 3 t p p t fig. 7. transient thermal impedance from junction to lead as a function of pulse width
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 7 / 13 9. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics v d = 12 v; i t = 100 ma; ld+ g-; t j = 25 c; fig. 8 1 - 10 ma i gt gate trigger current v d = 12 v; i t = 100 ma; ld- g-; t j = 25 c; fig. 8 1 - 10 ma v d = 12 v; i g = 100 ma; ld+ g-; t j = 25 c; fig. 9 - - 25 ma i l latching current v d = 12 v; i g = 100 ma; ld- g-; t j = 25 c; fig. 9 - - 20 ma i h holding current v d = 12 v; t j = 25 c; fig. 10 - - 20 ma v t on-state voltage i t = 1.1 a; t j = 25 c; fig. 11 - - 1.3 v v d = 12 v; i t = 100 ma; t j = 25 c; fig. 12 - - 1 v v gt gate trigger voltage v d = 400 v; i t = 100 ma; t j = 125 c; fig. 12 0.15 - - v v d = 800 v; t j = 25 c - - 2 a i d off-state current v d = 800 v; t j = 125 c - - 0.2 ma v cl clamping voltage i cl = 0.1 ma; t p = 1 ms; t j = 25 c 850 - - v dynamic characteristics dv d /dt rate of rise of off-state voltage v dm = 536 v; t j = 125 c; (v dm = 67% of v drm ); exponential waveform; gate open circuit; fig. 13 500 - - v/s di com /dt rate of change of commutating current v d = 400 v; t j = 125 c; i t(rms) = 0.8 a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; fig. 14 ; fig. 15 0.5 - - a/ms
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 8 / 13 t j (c) -50 150 100 0 5 0 aaa-01 1245 1 2 3 0 (1) (2) i g t i g t(25c) (1) ld+ g- (2) ld- g- fig. 8. normalized gate trigger current as a function of junction temperature t j (c) -50 150 100 0 5 0 aaa-01 1246 1 2 3 0 i l i l(25c) fig. 9. normalized latching current as a function of junction temperature t j (c) -50 150 100 0 5 0 aaa-01 1247 1 2 3 0 i h i h(25c) fig. 10. normalized holding current as a function of junction temperature v t (v) 0 2 1.5 0.5 1 aaa-01 1248 1 0.5 1.5 2 i t (a) 0 (1) (2) (3) v o = 0.967 v; r s = 0.225 ? (1) t j = 125 c; typical values (2) t j = 125 c; maximum values (3) t j = 25 c; maximum values fig. 11. on-state current as a function of on-state voltage
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 9 / 13 t j (c) -50 150 100 0 5 0 aaa-01 1249 0.8 1.2 1.6 0.4 v g t v gt(25c) fig. 12. normalized gate trigger voltage as a function of junction temperature t j (c) 2 5 125 100 5 0 7 5 aaa-01 1250 4 8 1 2 0 a b 1 0 6 2 a is dv d /dt at condition t j c b is dv d /dt at condition t j 125 c fig. 13. normalized rate of rise of off-state voltage as a function of junction temperature t j (c) 2 5 125 100 5 0 7 5 aaa-01 1251 4 8 1 2 0 a b a is di com /dt at condition t j c b is di com /dt at condition t j 125 c v d = 400 v fig. 14. normalized critical rate of rise of commutating current as a function of junction temperature aaa-011252 0 6 1 2 1 8 2 4 1 0 - 1 1 1 0 1 0 2 b s ) a [b] a [spec] a[b] is di com /dt at condition b, dv com /dt a[spec] is the specified data sheet value of di com /dt turn-off time < 20 ms fig. 15. normalized critical rate of change of commutating current as a function of critical rate of change of commutating voltage; minimum values
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 10 / 13 10. package outline u n i t a r e f e r e n c e s o u t l i n e v e r s i o n e u r o p e a n p r o j e c t i o n i s s u e d a t e i e c j e d e c j e i t a m m 5 . 2 5 . 0 b 0 . 4 8 0 . 4 0 c 0 . 4 5 0 . 3 8 d 4 . 8 4 . 4 d 1 . 7 1 . 4 e 4 . 2 3 . 6 l 1 4 . 5 1 2 . 7 e 2 . 5 4 e 1 1 . 2 7 l 1 ( 1 ) m a x . 2 . 5 b 1 0 . 6 6 0 . 5 5 d i m e n s i o n s ( m m a r e t h e o r i g i n a l d i m e n s i o n s ) n o t e 1 . t e r m i n a l d i m e n s i o n s w i t h i n t h i s z o n e a r e u n c o n t r o l l e d t o a l l o w f o r f l o w o f p l a s t i c a n d t e r m i n a l i r r e g u l a r i t i e s . s o t 5 4 t o - 9 2 s c - 4 3 a 0 4 - 0 6 - 2 8 0 4 - 1 1 - 1 6 a l 0 2 . 5 5 m m s c a l e b c d b 1 l 1 d e p l a s t i c s i n g l e - e n d e d l e a d e d ( t h r o u g h h o l e ) p a c k a g e ; 3 l e a d s s o t 5 4 e 1 e 1 2 3 fig. 16. package outline to-92 (sot54)
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 11 / 13 11. legal information 11.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 11.2 definitions preview the document is a preview version only. the document is still subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer, unless nxp semiconductors and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 11.3 disclaimers limited warranty and liability information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customers sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). customer is responsible for doing all necessary testing for the customers applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). nxp does not accept any liability in this respect. limiting values stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of nxp semiconductors products by customer. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 12 / 13 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. non-automotive qualified products unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors standard warranty and nxp semiconductors product specifications. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 11.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i- code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp semiconductors n.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation.
nxp semiconductors ACT108-800E ac thyristor power switch ACT108-800E all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 13 march 2014 13 / 13 12. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ? nxp semiconductors n.v. 2014. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 13 march 2014

▲Up To Search▲

Price & Availability of ACT108-800E

	To Download ACT108-800E Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .