click to buy information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. features ? high ?? gain ? h fe ?? 200 ? @ ? 10a \ 1ma ? tight ? v be ? matching ? |v be1 ? ? ? v be2 ? |= ? 0.2mv ? typ. ? high ? f t ? 250mhz ? typ. ? @ ? 1ma ? absolute ? maximum ? ratings ? 1 ? @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +200c ? operating ? junction ? temperature ?\ 55c ? to ? +150c ? maximum ? power ? dissipation ? continuous ? power ? dissipation ? (one ? side) ? 250mw ? continuous ? power ? dissipation ? (both ? sides) ? 500mw ? linear ? derating ? factor ? (one ? side) ? 2.3mw/c ? linear ? derating ? factor ? (both ? sides) ? 4.3mw/c ? maximum ? currents ? collector ? current ? 10ma ? ?? matching ? characteristics ? @ ? 25c ? (unless ? otherwise ? stated) ? symbol ? characteristic ? min ? typ ? max ? units ? conditions ? |v be1 ? ? ? v be2 ? | ? base ? emitter ? voltage ? differential ? \\? 0.2 ? 0.5 ? mv ? i c ? = ? 10a, ? v ce ? = ? 5v ? ? |(v be1 ? ? ? v be2 )| ? / ?? t ? ? base ? emitter ? voltage ? differential ? change ? with ? temperature ? \\? 0.5 ? 2 ? v/c ? i c ? = ? 10a, ? v ce ? = ? 5v ? t a ? = ?\ 55c ? to ? +125c ? |i b1 ? ? ? i b2 ? | ? base ? current ? differential ? \\? \\? 5 ? na ? i c ? = ? 10a, ? v ce ? = ? 5v ? | ?? (i b1 ? ? ? i b2 )|/c ? base ? current ? differential ? ? change ? with ? temperature ? \\? \\? 0.3 ? na/c ? i c ? = ? 10a, ? v ce ? = ? 5v ? t a ? = ?\ 55c ? to ? +125c ? h fe1 ? /h fe2 ? dc ? current ? gain ? differential ? \\? 5 ? \\? % ? i c ? = ? 10a, ? v ce ? = ? 5v ? ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristics ? min. ? typ. ? max. ? units ? conditions ? bv cbo ? collector ? to ? base ? voltage ? 60 ? \\? \\? v ? i c ? = ? 10a, ? i e ? = ? 0 ? bv ceo ? collector ? to ? emitter ? voltage ? 60 ? \\? \\? v ? i c ? = ? 10a, ? i b ? = ? 0 ? bv ebo ? emitter \ base ? breakdown ? voltage ? 6.2 ? \\? \\? v ? i e ? = ? 10a, ? i c ? = ? 0 2 ? bv cco ? collector ? to ? collector ? voltage ? 100 ? \\? \\? v ? i c ? = ? 10a, ? i e ? = ? 0 ? ? h fe ? ? dc ? current ? gain ? 200 ? \\? \\? ? i c ? = ? 10a, ? v ce ? = ? 5v ? 200 ? \\? \\? ? i c ? = ? 100a, ? v ce ? = ? 5v ? 200 ? \\? \\? ? i c ? = ? 1ma, ? v ce ? = ? 5v ? v ce (sat) ? collector ? saturation ? voltage ? \\? \\? 0.25 ? v ? i c ? = ? 1ma, ? i b ? = ? 0.1ma ? i ebo ? emitter ? cutoff ? current ? \\? \\? 0.2 ? na ? i e ? = ? 0, ? v cb ? = ? 3v ? i cbo ? collector ? cutoff ? current ? \\? \\? 0.2 ? na ? i e ? = ? 0, ? v cb ? = ? 30v ? c obo ? output ? capacitance ? \\? \\? 2 ? pf ? i e ? = ? 0, ? v cb ? = ? 5v ? c c1c2 ? collector ? to ? collector ? capacitance ? \\? \\? 2 ? pf ? v cc ? = ? 0v ? i c1c2 ? collector ? to ? collector ? leakage ? current ? \\? \\? 0.5 ? na ? v cc ? = ? 45v ? f t ? current ? gain ? bandwidth ? product ? 200 ? \\? \\? mhz ? i c ? = ? 1ma, ? v ce ? = ? 5v ? nf ? narrow ? band ? noise ? figure ? \\? \\? 3 ? db ? i c ? = ? 100a, ?? v ce ? = ? 5v, ? bw=200hz, ? r g = ? 10k , ?? f ? = ? 1khz ? notes: ? 1. ? absolute ? maximum ? ratings ? are ? limiting ? values ? above ? which ? serviceability ? may ? be ? impaired 2. ? the ? reverse ? base \ to \ emitter ? voltage ? must ? never ? exceed ? 6.2 ? volts; ? the ? reverse ? base \ to \ emitter ? current ? must ? never ? exceed ? 10a. ? ? ? ? ? ls312 monolithic dual npn transistor ls312 features: ? very high gain ? tight matching ? low output capacitance the ls312 is a monolithic pair of npn transistors mounted in a single soic package. the monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. the 8 pin soic provides ease of manufacturing, and the symmetrical pinout prev ents improper orientation. (see packaging information). linear s y stems hi g h volta g e su p e r -beta monolithic dual npn available packages: ls312 in soic ls312 available as bare die please contact micross for fu ll package and die dimensions: email: chipcomponents@micross.com web: www.micross.com/distribution.aspx soic (top view)
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