? 2002 ixys all rights reserved 1 - 2 ixys reserves the right to change limits, test conditions and dimensions. features ? three phase mains rectifier brake chopper: - igbt with low saturation voltage - hiperfred tm free wheeling diode module package: - high level of integration - solder terminals for pcb mounting - isolated dcb ceramic base plate applications drives with mains input dc link inverter or chopper feeding the machine motor and generator/brake operation v rrm = 1200/1600 v i davm = 56 a input rectifier d1 - d6 symbol conditions maximum ratings v rrm 1200/1600 v i fav t c = 100c; sine 180 22 a i davm t c = 100c; rectangular; d = 1 / 3 ; bridge 56 a i fsm t vj = 25c; t = 10 ms; sine 50 hz 300 a p tot t c = 25c 90 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v f i f = 45 a; t vj = 25c 1.3 1.6 v t vj = 125c 1.2 v i r v r = v rrm ;t vj = 25c 0.2 ma v r = 0.8 v rrm ;t vj = 125c 0.4 ma r thjc per diode; rectangular 120 1.45 k/w r thjh with heat transfer paste 1.8 k/w chopper diode d symbol conditions maximum ratings v rrm t vj = 25c to 150c 1200 v i f25 dc; t c = 25c 15 a i f80 dc; t c = 80c 10 a symbol conditions characteristic values min. typ. max. v f i f = 10 a; t vj = 25c 2.6 3.0 v t vj = 125c 1.9 v i r v r = v rrm ;t vj = 25c 0.06 ma t vj = 125c 0.06 ma i rm i f = 10 a; di f /dt = -400 a/s; t vj = 125c 13 a t rr v r = 600 v 110 ns r thjc 3.5 k/w r thjh with heat transfer paste 5 k/w 214 advanced technical information vub 50 v rrm type v 1200 vub 50-12 po1 1600 vub 50-16 po1 three phase rectifier bridge with igbt and fast recovery diode for braking system in eco-pac 2 d1 d3 d5 d2 d4 d6 k1 d1 g1 a4 v16 n7 r9 l9 x18 d t
? 2002 ixys all rights reserved 2 - 2 chopper transistor t symbol conditions maximum ratings v ces t vj = 25c to 150c 1200 v v ges 20 v i c25 dc; t c = 25c 18 a i c80 dc; t c = 80c 14 a i cm v ge = 15 v; r g = 82 ? ; t vj = 125c 20 a v cek rbsoa; l = 100 h; clamped inductive load v ces symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 10 a; v ge = 15 v; t vj = 25c 2.3 2.7 v t vj = 125c 2.7 v v ge(th) i c = 0.4 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 0.5 ma t vj = 125c 0.8 ma i ges v ce = 0 v; v ge = 20 v 200 na t d(on) 50 ns t r 40 ns t d(off) 290 ns t f 60 ns e on 1.2 mj e off 1.1 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 600 pf q gon v ce = 600 v; v ge = 15 v; i c = 10 a 45 nc r thjc 1.4 k/w r thjh with heat transfer paste 2.7 k/w inductive load, t vj = 125c v ce = 600 v; i c = 10 a v ge = 15 v; r g = 82 ? dimensions in mm (1 mm = 0.0394") vub 50 module symbol conditions maximum ratings t vj -40...+150 c t stg -40...+125 c v isol i isol 1 ma; 50/60 hz; t = 1 sec 3600 v~ m d mounting torque (m5) 1.5 - 2 nm 14 - 18 lb.in. symbol conditions characteristic values min. typ. max. d a , d s pin to heatsink 11.2 mm weight 24 g
|
