92513 tkim tc-00003021/ no. a2218-1/5 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 ndul03n150c n-channel power mosfet 1500v, 2.5a, 10.5 , to-3pf-3l stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-resistance r ds (on)=8 (typ.) ? input capacitance ciss=650pf (typ.) ? 10v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss 1500 v gate to source voltage v gss 30 v drain current (dc) i d limited only maximum temperature tch = 150 c 2.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 5 a allowable power dissipation p d 3.0 w tc=25 c 50 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 34 mj avalanche current *2 i av 2.5 a note : * 1 v dd =50v, l=10mh, i av =2.5a (fig.1) * 2 l 10mh, single pulse electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d =10ma, v gs =0v 1500 v zero-gate voltage drain current i dss v ds = 1200 v, v gs =0v 1ma gate to source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 24v forward transfer admittance | yfs | v ds =20v, i d = 1.25 a 1.9 s static drain to source on-state resistance r ds (on) i d = 1.25 a, v gs =10v 8 10.5 input capacitance ciss v ds =30v, f=1mhz 650 pf output capacitance coss 70 pf reverse transfer capacitance crss 20 pf turn-on delay time t d (on) see fig.2 15 ns rise time t r 24 ns turn-off delay time t d (off) 140 ns fall time t f 47 ns total gate charge qg v ds =200v, v gs =10v, i d =2.5a 34 nc gate to source charge qgs 4.7 nc gate to drain ?miller? charge qgd 15 nc diode forward voltage v sd i s =2.5a, v gs =0v 0.8 1.5 v reverse recovery time t rr see fig.3 i s =2.5a, v gs =0v, di/dt=100a/ s 350 ns reverse recovery charge q rr 2220 nc ordering number : ENA2218 ordering information see detailed ordering and shipping information on page 4 of this data sheet. to-3pf-3l
ndul03n150c no. a2218-2/5 drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a static drain to source on-state resistance, r ds (on) -- static drain to source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a gate to source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- tc r ds (on) -- v gs i s -- v sd | y fs | -- i d forward transfer admittance, | y fs | -- s drain current, i d -- a switching time, sw time -- ns drain to source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it17222 it17249 it17224 it17225 --50 --25 0 25 50 75 100 125 150 0 0 3.0 2.5 3.5 4.0 4.5 5.0 1.5 2.0 10 30 40 50 20 1.0 0.5 0 3.5 4.0 4.5 5.0 3.0 2.5 1.5 1.0 2.0 0.5 0 5 10 15 20 10v 8v 0 18 20 22 16 14 12 10 8 6 4 2 tc=25 c v ds =20v v gs =4v it17248 0 0.2 0.4 0.6 0.8 1.2 1.0 0.01 0.1 10 7 5 3 2 7 5 3 2 2 1.0 7 5 3 it17226 25 c - -25 c tc=75 c 0.01 0.1 23 57 23 57 1.0 10 23 7 5 1.0 10 0.1 2 5 7 7 3 2 5 3 v ds =20v tc= --25 c 75 c tc= --25 c 25 c 75 c 02 0 20 22 18 16 14 12 10 8 6 4 2 12 14 10 6 48 single pulse i d =1.25a tc=75 c 25 c --25 c v gs =10v, i d =1.25a 5v 25 c 6v it17228 100 10 1000 3 2 2 5 7 3 7 5 0.1 1.0 10 2 3 57 2 3 57 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 100 10 1000 5 7 10000 7 5 3 3 2 2 7 5 3 2 50 10 15 530354045 20 25 it17229 f=1mhz ciss coss crss sw time -- i d single pulse single pulse v gs =0v
ndul03n150c no. a2218-3/5 total gate charge, qg -- nc gate to source voltage, v gs -- v v gs -- qg s o a p d -- tc drain to source voltage, v ds -- v drain current, i d -- a case temperature, tc -- c allowable power dissipation, p d -- w 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w it17234 0 0 20 40 60 80 100 120 3.0 3.5 2.5 140 160 2.0 1.5 1.0 0.5 it17232 it17231 0.01 2 0.1 3 5 7 2 3 5 7 2 3 5 7 0.1 10 s 100ms 10ms 1ms dc operation 1.0 10 100 1k 10k 23 57 23 57 23 57 23 57 23 57 10 operation in this area is limited by r ds (on). i dp =5a (pw 10 s) 1.0 it17233 0 0 20 40 60 80 100 140 120 10 60 40 50 30 20 160 it17230 0 0 1 2 3 4 5 6 7 8 10 9 40 20 30 10 v ds =200v i d =2.5a 100 s i d =2.5a tc=25 c single pulse
ndul03n150c no. a2218-4/5 package dimensions ndul03n150cg to-3pf-3l case 340ah issue o unit : mm 1: gate 2: drain 3: source ordering & package information marking electrical connection device package shipping memo ndul03n150cg to-3pf-3l sc-94 30 pcs./tube pb-free 03n150 c lot no. 1 3 2
ndul03n150c ps no. a2218-5/5 note on usage : since the ndul03n150c is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit 50 50 rg v dd l 10v 0v ndul03n150c g s d p. g 50 g s d i d =1.25a r l =152 v dd =200v v out ndul03n150c v in pw 10 s d.c. 1% 10v 0v v in v dd =50v ndul03n150c 500 h driver mosfet g s d
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