dm n10h220l new product 100v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d t a = + 25c 100 v 220 m ? @ v gs = 10v 1.6 a 2 5 0 m ? @ v gs = 4.5 v 1.3 a description this new generation mosfet has been designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? load switch features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. ?green? device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot 23 ? case material: molded plastic, ?green? molding compound ? ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0.00 72 grams (approximate) ordering information (note 4 ) part number compliance case packaging dm n10h220l - 7 standard sot23 3 , 0 00/tape & reel dm n10h220l - 13 standard sot23 10 , 0 00/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging d etails, go to our website at http:// www.diodes.com/products/packages.html . marking information date code key year 2013 2014 2015 2016 2017 201 8 201 9 code a b c d e f g month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d t op view pin configuration d g s sot 23 d s g equivalent circuit n1h = marking code ym = date code marking for sat (shanghai assembly/ test site) ym = date code marking for cat (chengdu assembly/ test site) y or y = year (ex: a = 201 3 ) m = month (ex: 9 = september) e3 dm n10h220l document number: ds 36720 rev. 3 - 2 1 of 6 www.diodes.com july 2014 ? diodes incorporated
dm n10h220l new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 10 0 v gate - source voltage v gss c i d 1.6 1.3 a (note 5 ) t a = + 25 c t a = + 70 thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6 ) t a = + 25c p d 1.3 w t a = + 70 c 0.8 thermal resistance, junction to ambient (note 6 ) r ja 94 c/w (note 5 ) 177 operating and storage temperature range t j, t stg - 5 5 to + 15 0 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 10 0 ? ? v v gs = 0v, i d = 250 on characteristics (note 7 ) gate threshold voltage v gs(th) 1 ? 2.5 v v ds = v gs , i d = 250 m? v gs = 10 v, i d = 1.6 a ? 250 v gs = 4 .5v, i d = 1.3 a diode forward voltage v sd ? 0.7 1.2 v v gs = 0v, i s = 1.1 a dynamic characteristics (note 8 ) input capacitance c iss ? 401 ? pf v ds = 25 v, v gs = 0v f = 1mhz output capacitance c oss ? 22 ? reverse transfer capacitance c rss ? 17 ? gate resistnace r g ? 2.1 ? ? , i d = 1 a turn - on rise time t r ? 8.2 ? turn - off delay time t d(off) ? 7.9 ? turn - off fall time t f ? 3.6 ? reverse recovery time t rr ? 17 ? ns i f = 1. 1 a, di/dt =100a/ s reverse recovery charge q rr ? 9.8 ? nc notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout . 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing. dm n10h220l document number: ds 36720 rev. 3 - 2 2 of 6 www.diodes.com july 2014 ? diodes incorporated
dm n10h220l new product 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 0.5 1 1.5 2 2.5 3 v , drain-source voltage (v) figure 1 typical output characteristic ds i , d r a i n c u r r e n t (a) d v = 3.5v gs v = 4.0v gs v = 8.0v gs v = 9.0v gs v = 10v gs v = 4.5v gs v = 5.0v gs v = 6.0v gs 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r en t (a) d v = 10v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 1 2 3 4 5 6 7 8 9 10 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n -r esi st an c e ( ) d s ( o n ) ? ? ? r , d r a i n - s o u r c e o n - r e s i st an c e (n o r m al i z ed ) d s ( o n ) v = 4.5v i = 5a gs d v =v i = 10a gs d 10 dm n10h220l document number: ds 36720 rev. 3 - 2 3 of 6 www.diodes.com july 2014 ? diodes incorporated
dm n10h220l new product 0 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j r , d r a i n - s o u r c e o n -r es i st an c e ( ) d s ( o n ) ? www.diodes.com july 2014 ? diodes incorporated
dm n10h220l new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) figure 12 transient thermal resistance r ( t ) , t r a n s i e n t t h er m al r esi s t a n c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 172c/w duty cycle, d = t1/ t2 ? ja ja ja sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 a all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 x e y c z j k1 k l1 h l m all 7 a c b d a dm 1hl d d 7 www.diodes.com july 2014 ? diodes incorporated
dm n10h220l new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorp orated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safe ty - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes in corporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2014, diodes incorporated www.diodes.com dm n10h220l document number: ds 36720 rev. 3 - 2 6 of 6 www.diodes.com july 2014 ? diodes incorporated
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