2014. 3. 31 1/2 semiconductor technical data kdv216e revision no : 3 tv tuning. features ? high capacitance ratio ? low series resistance maximum rating (ta=25 ? ) 1. anode 2. cathode esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e f 0.13 0.05 f g + _ + _ + _ + _ + _ + _ 0.20 0.10 + _ gg electrical characteristics (ta=25 ? ) variable capacitance diode silicon epitaxial planar diode type name marking 3 v characteristic symbol rating unit reverse voltage v r 32 v junction temperature t j 125 ? storage temperature range t stg -55 ?- 125 ? characteristic symbol test condition min. typ. max. unit reverse current i r v r =32v - - 10 na capacitance c 1v v r =1v, f=1mhz 19.0 - 21.0 pf c 2v v r =2v, f=1mhz - 15.0 - pf c 25v v r =25v, f=1mhz - 2.1 - pf c 28v v r =28v, f=1mhz 1.75 - 2.15 pf capacitance ratio c 1v /c 28v - 9.2 10 - - c 1v /c 2v - 1.2 - - - c 25v /c 28v - 1.035 1.045 - - series resistance rs v r =5v, f=470mhz - - 0.7 ? note : available in matched group for capacitance to 2.0%. c(max.)-c(min.) z 0.02 c(min.) (v r =1~28v)
2014. 3. 31 2/2 revision no : 3 kdv216e 05 10 15 20 25 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 30 reverse voltage v r (v) ta=25 c f=470mhz c t - v r reverse voltage v r (v) 05 total capacitance c t (pf) 10 15 20 25 1 10 100 ta=25 c f=1mhz 30 i r - v r reverse voltage v r (v) 05 reverse current i r (pa) 10 15 20 25 1 10 100 ta=25 c 30 0510 15 20 25 30 r s - v r series resistance r s ( ? )
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