2000. 6. 9 1/2 semiconductor technical data KDV152S revision no : 2 vco for cb, c/p pll application. features low series resistance : r s =0.3(typ.). small package. maximum rating (ta=25 1 ) dim millimeters 1. nc 2. anode 3. cathode sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 2 1 3 + _ electrical characteristics (ta=25 1 ) variable capacitance diode silicon epitaxial planar diode characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =10 a 15 - - v reverse current i r v r =15v - - 50 na capacitance c 2v v r =2v, f=1mhz 42 - 47.5 pf c 8v v r =8v, f=1mhz 24 - 28.8 capacitance ratio c 2v/ c 8v 1.60 - 1.8 series resistance r s c=38pf, f=100mhz - 0.3 0.4 u characteristic symbol rating unit reverse voltage v r 15 v junction temperature t j 150 1 storage temperature range t stg -55 150 1 type name marking lot no. n3
2000. 6. 9 2/2 revision no : 2 KDV152S c - v r reverse voltage v (v) 1 3 10 30 100 5 capacitance c (pf) 30 r 5 10 50 f=1mhz ta=25 c ta=25 c f=50mhz 500 100 5 r 300 figure of merit q 50 1k 30 10 3 1 reverse voltage v (v) r q - v
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