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hexfet power mosfet notes through are on page 9 features and benefits applications ? or-ing mosfet for 12v (typical) bus in-rush current ? battery operated dc motor inverter mosfet features benefits pqfn 5x6 mm low rdson (<1.15 m 0. 100 0. ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability v ds 25 v r ds(on) max (@v gs = 10v) 1.15 m q g (typical) 52 nc r g (typical) 1.3 i d (@t mb = 25c) 100 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t mb = 25c continuous drain current, v gs @ 10v i d @ t mb = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t mb = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range 100 v w a c -55 to + 150 3.6 0.029 160 max. 45 100 400 20 25 31

! "# form quantity irfh5250trpbf pqfn 5mm x 6mm tape and reel 4000 irfh5250tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note

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s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 ??? ??? v ? . 0.0 0. 1.1 1. 1. 1. 1.0 . 10 a . .0 10 100 100 11 110 1 1 . 1 1 1. t d(on) turn-on delay time ??? 28 ??? t r rise time ??? 46 ??? t d(off) turn-off delay time ??? 30 ??? t f fall time ??? 19 ??? c is s input capacitance ??? 7174 ??? c os s output capacitance ??? 1758 ??? c rss reverse transfer capacitance ??? 828 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 37 56 ns q rr reverse recovery charge ??? 68 102 nc t on forward turn-on time v gs = 20v v gs = -20v time is dominated by parasitic inductance ns a pf nc v ds = 13v ??? v ds = 16v, v gs = 0v v gs = 4.5v, i d = 50a ??? ??? 400 ??? ??? 100 mosfet symbol na v gs = 10v, v ds = 13v, i d = 50a i d = 50a v gs = 0v v ds = 13v v gs = 4.5v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 50a v ds = 20v, v gs = 0v conditions max. 468 50 ? = 1.0mhz t j = 25c, i f = 50a, v dd = 13v di/dt = 200a/ s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. typ. ??? r g =1.8 1 0 0 0 1 a i d = 50a v dd = 13v, v gs = 4.5v thermal resistance parameter typ. max. units r 0. 0. ??? 15 c/w r ??? 35 r 10 ??? 21
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60 s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 1 1.5 2 2.5 3 3.5 4 4.5 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 50a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 60 s pulse width tj = 25c 2.7v
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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a id = 1.0ma id = 500 a id = 150 a 25 50 75 100 125 150 t c , case temperature (c) 0 50 100 150 200 250 300 350 i d , d r a i n c u r r e n t ( a ) limited by package 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100 sec dc limited by package

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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 1 2 3 4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 50a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 18a 24a bottom 50a fig 14. typical avalanch current vs. pulsewidth 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 125c and tstart =25c (single pulse)
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fig 15.

for n-channel hexfet power mosfets fig 18a. gate charge test circuit fig 18b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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%% ? "#""&# 1k vcc dut 0 l s fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 17a. switching time test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f '( 1 ) $
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for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-113 6: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "b" package details pqfn 5x6 outline "g" package details
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pqfn 5x6 tape and reel bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimens ion des ign to accommodate the component width dimens ion des ign to accommodate the component lenght dimens ion des ign to accommodate the component thicknes s pitch between s ucces s ive cavity centers overall width of the carrier tape des cript ion type package 5 x 6 pqf n note: all dimens ion are nominal d i ameter reel qty width reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code)
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qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.37mh, r g = 25 , i as = 50a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production test capability ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? ? ? . ? . ? 1 . revision history 12/16/2013 4/28/2015 5/19/2015

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