IS31AP4915A integrated silicon solution, inc. ? www.issi.com 1 rev. b, 08/08/2013 20v p-p charge pump ceramic speaker driver august 2013 general description the IS31AP4915A features a mono power amplifier with an integrated charge-pump power supply specifically designed to drive the high capacitance of a ceramic loudspeaker. the IS31AP4915A maximizes battery life by offering high performance efficiency. the IS31AP4915A is ideally suited to deliver the high output-voltage swing required to drive ceramic/piezoelectric speakers. the device utilizes comprehensive click-and-pop suppression and shutdown control. the IS31AP4915A is fully specified over the -40c to +85c extended temperature range and is available in small lead-free 16-pin qfn (4mm 4mm) packages. typical application circuit features ? integrated charge-pump power supply - no inductor required ? thermal protection ? pop reduction circuitry ? 20v p-p voltage swing into piezoelectric speaker ? qfn-16, 4mm 4mm ? esd (hbm): 2kv esd (mm): 200v applications ? cd/mp3 players ? smart phones ? cellular phones ? pdas ? handheld gaming figure 1 typical application circuit
IS31AP4915A integrated silicon solution, inc. ? www.issi.com 2 rev. b, 08/08/2013 pin configuration package pin configuration (top view) qfn-16 pin description no. pin description 1 c1p charge pump flying ca pacitor positive terminal. 2 pgnd power ground, connect to ground. 3 c1n charge pump flying capacitor negative terminal. 4 pvss output from charge pump. 5, 13 nc no connection. 6 svss amplifier negative supply, connect to pvss. 7 out+ positive output signal. 8 svcc amplifier positive supply, connect to pvcc. 9 out- negative output signal. 10 fb feed back. 11, 15 sdb shutdown, active low logic. 12 in audio input signal. 14 sgnd signal ground, connect to ground. 16 pvcc charge pump supply voltage, connect to positive supply. thermal pad connect to gnd.
IS31AP4915A integrated silicon solution, inc. ? www.issi.com 3 rev. b, 08/08/2013 ordering information industrial range: -40c to +85c order part no. package qty/reel IS31AP4915A-qfls2-tr qfn-16, lead-free 2500 copyright ? ? ? 2013 ? integrated ? silicon ? solution, ? inc. ? all ? rights ? reserved. ? issi ? reserves ? the ? right ? to ? make ? changes ? to ? this ? specification ? and ? its ? products ? at ? any ? time ? without ? notice. ? issi ? assumes ? no ? liability ? arising ? out ? of ? the ? application ? or ? use ? of ? any ? information, ? products ? or ? services ? described ? herein. ? customers ? are ? advised ? to ? obtain ? the ? latest ? version ? of ? this ? device ? specification ? before ? relying ? on ? any ? published ? information ? and ? before ? placing ? orders ? for ? products. ? integrated ? silicon ? solution, ? inc. ? does ? not ? recommend ? the ? use ? of ? any ? of ? its ? products ? in ? life ? support ? applications ? where ? the ? failure ? or ? malfunction ? of ? the ? product ? can ? reasonably ? be ? expected ? to ? cause ? failure ? of ? the ? life ? support ? system ? or ? to ? significantly ? affect ? its ? safety ? or ? effectiveness. ? products ? are ? not ? authorized ? for ? use ? in ? such ? applications ? unless ? integrated ? silicon ? solution, ? inc. ? receives ? written ? assurance ? to ? its ? satisfaction, ? that: ? a.) ? the ? risk ? of ? injury ? or ? damage ? has ? been ? minimized; ? b.) ? the ? user ? assume ? all ? such ? risks; ? and ? c.) ? potential ? liability ? of ? integrated ? silicon ? solution, ? inc ? is ? adequately ? protected ? under ? the ? circumstances
IS31AP4915A integrated silicon solution, inc. ? www.issi.com 4 rev. b, 08/08/2013 absolute maximum ratings supply voltage, v cc - 0.3v ~ +7.0v voltage at any input pin - 0.3v ~ v cc +0.3v maximum junction temperature, t jmax 150c storage temperature range, t stg - 65c ~ +150c operating temperature range, t a ? 40c ~ +85c note: stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of th e specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. electrical characteristics t a =25c, v cc = 2.5v ~ 5.5v (unless otherwise noted). (note 1) symbol parameter condition min. typ. max. unit sv cc , pv cc supply voltage 2.5 5.5 v v ih high level input voltage 1.75 v v il low level input voltage 0.5 v |v os | output offset voltage 6 mv i cc supply current v cc = 3v, v sdb = v cc 6.0 8.0 ma v cc = 5v, v sdb = v cc 8.5 10.5 i sd shutdown current v sdb = 0v 1 a electrical characteristics v cc = 3.6v, t a = 25c (unless otherwise noted). (note 2) symbol parameter condition min. typ. max. unit v out output voltage f = 1khz thd+n = 10% r l = 1 f+10 ? v cc = 5.0v 7.8 v rms v cc = 3.6v 5.6 v cc = 2.7v 4.3 thd+n total harmonic distortion plus noise r l = 1 f+10 ? ,v out = 1khz/2v rms 0.004 % r l = 1 f+10 ? ,v out = 1khz/4v rms 0.014 v no noise output voltage 10 v rms f osc charge pump switching frequency 320 khz t on start-up time from shutdown 450 s snr signal-to-noise ratio 100 db t ovp thermal shutdown threshold 160 c t hy thermal shutdown hysteresis 15 c note 1: production testing of the device is performed at 25c. functional operation of the device and parameters specified over other temperature range, are guaranteed by design, characterization and process control. note 2: guaranteed by design.
IS31AP4915A integrated silicon solution, inc. ? www.issi.com 5 rev. b, 08/08/2013 typical operating characteristics thd+n(%) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) 0.001 20 0.01 0.1 1 5 v cc = 2.7v r l = 10 ? +1h v out = 3.0vrms v out = 1.25vrms figure 2 thd+n vs. frequency thd+n(%) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) 0.001 20 0.01 0.1 1 5 v cc = 5.0v r l = 10 ? +1h v out = 3.0vrms v out = 6.0vrms figure 4 thd+n vs. frequency supply current(ma) supply voltage(v) 2 3 4 5 6 7 8 2.5 3 3.5 4 4.5 5 5.5 figure 6 supply current vs. supply voltage thd+n(%) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) 0.001 20 0.01 0.1 1 5 v cc = 3.6v r l = 10 ? +1h v out = 2.0vrms v out = 4.0vrms figure 3 thd+n vs. frequency thd+n(%) output voltage(v) 0.001 20 0.01 0.1 1 5 18 234567 500m r l = 10 ? +1h f = 1khz v cc = 2.7v v cc = 5.0v v cc = 3.6v figure 5 thd+n vs. output voltage supply current(ma) output voltage(v rms ) 0 10 20 30 40 50 60 70 01234567 v cc =5v f=1khz figure 7 supply current vs. output voltage
IS31AP4915A integrated silicon solution, inc. ? www.issi.com 6 rev. b, 08/08/2013 functional block diagram bias in sdb c1p out+ svcc click-and-pop suppression uvlo & sd control charge pump c1n out- pvcc sgnd pgnd fb svss pvss
IS31AP4915A integrated silicon solution, inc. ? www.issi.com 7 rev. b, 08/08/2013 application information input-blocking capacitors dc input-blocking capacitors are required to be added in series with the audio signal into the input pin of the IS31AP4915A. this capacitor block the dc portion of the audio source and allow the IS31AP4915A inputs to be properly biased to provide maximum performance. these capacitors form a high-pass filter with the input impedance of the IS31AP4915A. the cutoff frequency is calculated using equation 1. for this calculation, the capacitance used is the input-blocking capacitor and the resistance is the input impedance of the IS31AP4915A. because the gains of both the IS31AP4915A is fixed, the input impedance remains a constant value. using the input impedance value from the operating characteristics table, the frequency and/or capacitance can be determined when one of the two values is given. in in cin c r f ? 2 1 ? (1) or in cin in r f c ? 2 1 ? charge pump flying capacitor and pvss capacitor the charge pump flying capacitor serves to transfer charge during the generation of the negative supply voltage. the pvss capacitor must be at least equal to the charge pump capacitor in order to allow maximum charge transfer. low esr capacitors are an ideal selection, and a value of 10 f is typical. capacitor values that are smaller than 10 f can be used, but the maximum output power is reduced and the device may not operate to specifications decoupling capacitors the IS31AP4915A require adequate power supply decoupling to ensure that the noise and total harmonic distortion (thd) are low. a good low equivalent-series-resistance (esr) ceramic capacitor, typically 1 f, placed as close as possible to the device v cc lead works best. placing this decoupling capacitor close to the IS31AP4915A is important for the performance of the amplifier. for filtering lower frequency noise signals, a 10 f or greater capacitor placed near the audio power amplifier would also help, but it is not required in most applications because of the high psrr of this device. layout recommendations the sgnd and pgnd pins of the IS31AP4915A must be routed separately back to the decoupling capacitor in order to provide proper device operation. if the sgnd and pgnd pins are connected directly to each other, the part functions without risk of failure, but the noise and thd performance do not meet the specifications.
IS31AP4915A integrated silicon solution, inc. ? www.issi.com 8 rev. b, 08/08/2013 classification reflow profiles profile feature pb-free assembly preheat & soak temperature min (tsmin) temperature max (tsmax) time (tsmin to tsmax) (ts) 150c 200c 60-120 seconds average ramp-up rate (tsmax to tp) 3c/second max. liquidous temperature (tl) time at liquidous (tl) 217c 60-150 seconds peak package body temperature (tp)* max 260c time (tp)** within 5c of the specified classification temperature (tc) max 30 seconds average ramp-down rate (tp to tsmax) 6c/second max. time 25c to peak temperature 8 minutes max. figure 8 classification profile
IS31AP4915A integrated silicon solution, inc. ? www.issi.com 9 rev. b, 08/08/2013 package information qfn-16 note: all dimensions in millimeters unless otherwise stated.
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