advanced power dual n-channel enhancement electronics corp. mode power mosfet capable of 2.5v gate drive bv dss 20v low on-resistance r ds(on) 16m surface mount package i d 7.5a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice operating junction temperature range -55 to 150 thermal data parameter 201412182 1 a p9938agey-hf halogen-free product total power dissipation 1.38 storage temperature range -55 to 150 drain current, v gs @ 4.5v 3 6 pulsed drain current 1 40 parameter rating drain-source voltage 20 gate-source voltage + 12 drain current, v gs @ 4.5v 3 7.5 2928-8 d1/d2 g2 g1 s2 s1 a p9938a series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the 2928-8 j-lead package provides good on-resistance performance and space saving like tsop-6. s1 g1 d1 s2 g2 d2
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =6a - 13.2 16 m v gs =2.5v, i d =4a - 17 24 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.35 0.6 1 v g fs forward transconductance v ds =5v, i d =6a - 23.6 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 30 ua q g total gate charge i d =6a - 12 19.2 nc q gs gate-source charge v ds =10v - 1.2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3.5 - nc t d(on) turn-on delay time v ds =10v - 7 - ns t r rise time i d =1a - 10 - ns t d(off) turn-off delay time r g =3.3 ? -21- ns t f fall time v gs =5v - 7.5 - ns c iss input capacitance v gs =0v - 850 1360 pf c oss output capacitance v ds =10v - 130 - pf c rss reverse transfer capacitance f=1.0mhz - 120 - pf r g gate resistance f=1.0mhz - 1.4 2.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.1a, v gs =0v - - 1.2 v t rr reverse recovery time i s =6a, v gs =0 v , - 17 - ns q rr reverse recovery charge di/dt=100a/s - 5 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap9938agey-hf 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 210 o c/w when mounted on min. copper pad.
a p9938agey-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 01234 v ds , drain-to-source voltage (v) i d , drain current (a) 5.0v 4.5v 3.5v 2.5v v g =1.8v t a =25 o c 0 10 20 30 40 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 5.0v 4.5v 3.5v 2.5v v g =1.8v 12 14 16 18 20 22 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v g =4.5v 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =250ua
ap9938agey-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 4 0 1 2 3 4 5 6 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =10v 0 200 400 600 800 1000 1200 1 5 9 13172125 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =210 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 2 4 6 8 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) 0 10 20 30 40 01234 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -40 o c
ap9938agey-hf marking information 5 yy7yss part number : yy7 date code (yss) y last digit of the year ss sequence
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