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this is information on a product in full production. december 2012 doc id 018945 rev 3 1/13 13 STW62NM60N n-channel 600 v, 0.04 typ., 65 a, mdmesh? ii power mosfet in a to-247 package datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order code v ds r ds(on) max i d STW62NM60N 600 v 0.049 65 a to-247 1 2 3 !-v $ ' 3 table 1. device summary order code marking package packaging STW62NM60N 62nm60n to-247 tube www.st.com
contents STW62NM60N 2/13 doc id 018945 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STW62NM60N electrical ratings doc id 018945 rev 3 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 65 a i d drain current (continuous) at t c = 100 c 41 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 260 a p tot total dissipation at t c = 25 c 450 w i as avalanche current, repetitive or not- repetitive (pulse width limited by t j max ) 10 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 480 mj dv/dt (2) 2. i sd 65 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss . peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.28 c/w r thj-amb thermal resistance junction-ambient max 50 c/w
electrical characteristics STW62NM60N 4/13 doc id 018945 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t j =125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 32.5 a 0.04 0.049 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 5800 250 12 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds. equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 1000 - pf r g intrinsic gate resistance f = 1 mhz open drain 2 q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 65 a, v gs = 10 v, (see figure 14) - 174 28 92 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 300 v, i d = 32.5 a r g =4.7 v gs = 10 v (see figure 13) - 30 35 65 210 - ns ns ns ns
STW62NM60N electrical characteristics doc id 018945 rev 3 5/13 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 65 260 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 65 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 65 a, di/dt = 100 a/s v dd = 100 v (see figure 15) - 470 10 45 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 65 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 15) - 570 15 50 ns c a
electrical characteristics STW62NM60N 6/13 doc id 018945 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 100 am15501v1 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 am09125v1 vgs=4v i d 120 8 0 40 0 0 8 v d s (v) (a) 4 12 160 v g s = 4 v v g s = 5 v v g s = 7 v v g s = 8 , 9, 10 v v g s = 6 v 16 am15502v1 i d 40 0 0 4 v g s (v) 8 (a) 2 6 8 0 v d s = 15 v 120 160 am15512v1 v g s 6 4 2 0 0 40 q g (nc) (v) 160 8 8 0 120 10 v dd =4 8 0 v 3 00 200 100 0 400 500 v d s (v) v d s i d =65 a am1551 3 v1 r d s (on) 0.04 0.0 3 9 0.0 38 0.0 3 7 0 20 i d (a) ( ) 10 3 0 0.041 v g s =10v 40 50 0.042 60 am15514v1
STW62NM60N electrical characteristics doc id 018945 rev 3 7/13 figure 8. capacitance variations figure 9. source-drain diode forward characteristics figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized b vdss vs temperature c 10000 1000 100 10 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am15515v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0.5 0.6 0.7 0. 8 0.9 1 1.1 t j =-50c t j =150c t j =25c 60 1.2 am15516v1 t j (c) i d =250 a 1.05 0.90 0.75 0.70 -50 0 -25 25 50 0. 8 0 0. 8 5 v g s (th) (norm) 75 100 125 0.95 1.00 am15 3 9 3 v1 r d s (on) 1.5 1. 3 0.7 0.5 -50 0 t j (c) (norm) -25 25 50 0.9 1.1 i d = 3 2,5 a 75 100 1.7 1.9 2.1 v g s = 10 v am15 38 7v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1
test circuits STW62NM60N 8/13 doc id 018945 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STW62NM60N package mechanical data doc id 018945 rev 3 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STW62NM60N 10/13 doc id 018945 rev 3 table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
STW62NM60N package mechanical data doc id 018945 rev 3 11/13 figure 19. to-247 drawing 0075 3 25_g
revision history STW62NM60N 12/13 doc id 018945 rev 3 5 revision history table 9. document revision history date revision changes 27-jun-2011 1 first release. 14-jul-2011 2 r ds(on) value has been corrected. 19-dec-2012 3 ? minor text changes ? document status promoted from preliminary to production data ? modified: r ds(on)max and i d values ? modified: i d , i dm , p tot , i as values and note 2 on ta bl e 2 ? modified: r tjcase on ta b l e 3 , i gss max value, v gs typical value on ta b l e 4 ? modified: max and typical values on ta bl e 7 ? inserted: section 2.1: electrical characteristics (curves)
STW62NM60N doc id 018945 rev 3 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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