FZ06BIA099FS target datasheet flowsol 0 bi 600v/18a high efficiency ultra fast switching frequency low inductive design sic in boost and h bridge transformerless solar inverters FZ06BIA099FS tj=25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1600 v t h =80c 28 t c =80c 38 t h =80c 33 t c =80c 50 maximum junction temperature t j max 150 c input boost mosfet v ds 600 v t h =80c 16 t c =80c 22 t h =80c 54 t c =80c 96 t j max 150 c 112 220 t j =25c t j =t j max t p =10ms 220 power dissipation p tot features flow0 housing target applications schematic a types i2t-value maximum ratings i fav a 2 s i fsm condition t j =t j max t p limited by t j max t j =t j max 20 w i dpulse gate-source peak voltage drain to source breakdown voltage v a w a a dc current p tot i 2 t bypass diode pulsed drain current forward current per diode surge forward current dc drain current power dissipation per diode maximum junction temperature i d v gs copyright by vincotech 1 revision: 1
FZ06BIA099FS target datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition input boost diode t h =80c 12 t c =80c 17 t h =80c 23 t c =80c 41 buck diode t h =80c 8 t c =80c 11 t h =80c 17 t c =80c 31 buck mosfet t h =80c 16 t c =80c 22 t h =80c 54 t c =80c 96 boost igbt t h =80c 22 t c =80c 27 t h =80c 50 t c =80c 75 t sc t j 150c 6 s v cc v ge =15v 360 v t j =t j max t j =25c t p limited by t j max 34 175 v a v c w a v ce i cpuls maximum junction temperature t p limited by t j max short circuit ratings dc collector current power dissipation per igbt collector-emitter break down voltage repetitive peak collector current gate-emitter peak voltage 175 maximum junction temperature c t p limited by t j max w 600 t j =t j max a t j =t j max 175 a 600 c 150 20 a v v c v w v ge t j =t j max t j max p tot t j =t j max i c pulsed drain current i dpulse p tot gate-source peak voltage vgs maximum junction temperature power dissipation t j max t j max repetitive peak forward current drain to source breakdown voltage v ds power dissipation per diode p tot dc drain current i d w v a maximum junction temperature i f peak repetitive reverse voltage repetitive peak forward current v rrm t j max p tot power dissipation peak repetitive reverse voltage dc forward current i frm dc forward current a t j =t j max t p limited by t j max a i f t c =110c 17 i frm t j =t j max v rrm 600 t j =25c t j =t j max t c =110c tc=25c 112 600 60 20 copyright by vincotech 2 revision: 1
FZ06BIA099FS target datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm c storage temperature t stg -40?+125 c clearance insulation voltage creepage distance t op operation temperature under switching condition -40?+(tjmax - 25) copyright by vincotech 3 revision: 1
FZ06BIA099FS target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 0,7 1,06 1,3 t j =125c 0,99 t j =25c 0,90 t j =125c 0,75 t j =25c 0,01 t j =125c 0,02 t j =25c 0,05 t j =125c thermal resistance chip to heatsink per chip f z06bia09 9 thermal grease thickness 50um = 1 w/mk 2,12 k/w t j =25c 0,09 t j =125c 0,2 t j =25c 2,5 3 3,5 t j =125c t j =25c 200 t j =125c t j =25c 25000 t j =125c t j =25c 15 t j =125c t j =25c 12 t j =125c t j =25c 75 t j =125c t j =25c 6 t j =125c t j =25c tbd t j =125c t j =25c tbd t j =125c t j =25c 119 t j =125c t j =25c t j =125c t j =25c t j =125c tj=25c 1,6 t j =150c 1,9 t j =25c 400 t j =150c t j =25c tbd t j =150c t j =25c tbd t j =150c t j =25c tbd t j =150c t j =25c tbd t j =150c di ( rec ) max t j =25c tbd /d t t j =150c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 3,00 k/w 8 8 rgon=1,7 ? 10 480 480 20 10 0 f=1mhz rgon=1,7 ? 13 r ds(on) t f fall time turn-off energy loss per pulse input capacitance e on q gs q gd i rrm i rm q rr t rr v f e rec turn off delay time forward voltage input boost mosfet reverse transfer capacitance gate to source charge turn-on energy loss per pulse output capacitance gate to drain charge total gate charge gate threshold voltage gate to source leakage current rgoff=1,7 ? vgs=vds 0 t r t d(on) i dss i r value conditions c iss r thjh c oss c rss thermal resistance chip to heatsink per chip 1,3 thermal grease thickness 50um = 1 w/mk characteristic values forward voltage threshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) s olar invert e v to r t bypass diode 10 v v ? ma reverse current 18 100 18 400 10 100 0 18 tj=25c 14 na static drain to source on resistance 480 600 zero gate voltage drain current t d(off) turn on delay time rise time rgon=1,7 ? q g e off reverse recovery time peak rate of fall of recovery current input boost diode reverse recovered energy reverse leakage current peak recovery current reverse recovery charge 10 8 1200 154 2660 61 ? nc a ns v mws c a mws a/ s ns pf i gss na v 0,0012 v (gs)th k/w copyright e \ vincotech 4 revision: 1
FZ06BIA099FS target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max value conditions characteristic values t j =25c 1,60 t j =150c 1,90 t j =25c tbd t j =150c t j =25c tbd t j =150c t j =25c tbd t j =150c di ( rec ) max t j =25c tbd /d t t j =150c t j =25c tbd t j =150c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 4k / w t j =25c 90 t j =125c 200 t j =25c 2,5 3 3,5 t j =125c t j =25c 200 t j =125c t j =25c 25000 t j =125c t j =25c 15 t j =125c t j =25c 12 t j =125c t j =25c 75 t j =125c t j =25c 6 t j =125c t j =25c tbd t j =125c t j =25c tbd t j =125c 600 0,0012 0 v ds =v gs 4 4 18 18 480 480 20 100 400 f=1mhz 0 10 10 10 13 0 rgon=1,7 ? thermal grease thickness 50um = 1 w/mk q g q rr t rr t d(on) r ds(on) rgoff=1,7 ? c rss v (gs)th i gss t r t d(off) e on q gd r thjh v f peak reverse recovery current zero gate voltage drain current i dss static drain to source on resistance i rrm reverse recovered charge erec gate threshold voltage e off c iss c oss q gs buck mosfet reverse recovery time reverse recovered energy peak rate of fall of recovery current diode forward voltage v c mws a/ s m ? 1,30 pf ns 100 mws 2660 rgon=1,7 ? turn off delay time rise time gate to drain charge gate to source charge turn-off energy loss per pulse fall time 18 buck diode input capacitance gate to source leakage current turn on delay time t f output capacitance turn-on energy loss per pulse total gate charge reverse transfer capacitance thermal resistance chip to heatsink per chip na nc na ns a v tj=25c 119 61 154 14 tj=25c k/w copyright e \ vincotech 5 revision: 1
FZ06BIA099FS target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max value conditions characteristic values t j =25c 5 5,8 6,5 t j =150c t j =25c 1,20 t j =150c 1,25 t j =25c 0,14 t j =150c t j =25c 350 t j =150c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,92 k/w note: for the boost igbt only lf switching allowed r 25 tol. 5% tj=25c 20,9 22 23,1 k ? r 100 tj=100c 1486 ? * see details on thermistor charts on figure 2. pf 3998 32 tj=25c gate emitter threshold voltage q gate boost igbt gate-emitter leakage current collector-emitter saturation voltage collector-emitter cut-off incl diode integrated gate resistor 0 gate charge input capacitance output capacitance reverse transfer capacitance c ies 480 tj=25c i ces v ge(th) v ce(sat) k 0 ? 15 nc 20 mw 200 b-value b (25/100) tol. 3% power dissipation p rated resistance* thermistor 600 r gint v ce =v ge f=1mhz c oss c rss i ges 15 0 ma na v v 20 7 0,0029 25 tj=25c tj=25c 71 1100 120 none copyright e \ vincotech 6 revision: 1
FZ06BIA099FS target datasheet ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing 10-FZ06BIA099FS-p893e p893e p893e FZ06BIA099FS outline pinout ordering code & marking ordering code and marking - outline - pinout c opyright by vincotec h 7 revision: 1
FZ06BIA099FS target datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: FZ06BIA099FS the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. c opyright by vincotec h 8 revision: 1
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