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| RLD78NZC3 laser diodes 1/3 algaas laser diodes RLD78NZC3 the RLD78NZC3 is one of the world?s first mass-produced laser diodes that is manufactured by molecular beam epitaxy. the characteristics of this laser diode are suitable for high-speed laser printers. ! ! ! ! applications laser printers high-speed laser printers ! ! ! ! features 1) one-third dispersion compared with conventional laser diodes. 2) high-precision, compact package. 3) low droop. 4) can be driven by single power supply (n type). ! ! ! ! external dimensions (units : mm) l.d. p.d. (1) (2) (3) n t y p e 2.3 + 0 1.0min. 3.6 4.4 + 0 1.0 0.1 0.4 0.1 1.2 0.1 6.5 0.5 3 ? 0.45 (2) (1) (3) ? 0.025 5.6 glass window chip 90 2 optical distance 1.35 equivalent circuit diagram ! ! ! ! absolute maximum ratings (tc=25 c) c c v v mw unit limits 10 2 30 ? 10~ + 60 ? 40~ + 85 symbol p o v r v r (pin) topr tstg parameter output laser pin photodiode operating temperature storage temperature reverse voltage
RLD78NZC3 laser diodes 2/3 ! ! ! ! electrical and optical characteristics (tc=25 c) parameter symbol min. typ. max. unit conditions i th ma 10 20 45 ? i op ma 20 40 65 p o = 6mw i m ma 0.2 0.4 1.0 // ? deg 81115 ? deg 25 30 38 p o = 6mw ? // deg ?? 2 nm 770 785 795 p o = 6mw ? p% ? 510 p o = 6mw ? deg ?? 3 ? y ? z ? x m ?? 80 ? v op v ? 1.9 2.3 mw/ma 0.2 0.4 0.6 p o = 6mw i(6mw) ? i(2mw) 4mw p o = 6mw parallel deviation angle parallel divergence angle perpendicular deviation angle emission point accuracy peak emission wavelength perpendicular divergence angle monitor current differential efficiency operating voltage operating current threshold current droop ? // and are defined as the angle within which the intensity is 50% of the peak value. ! ! ! ! electrical and optical characteristic curves optical power : p o (mw) operating current : i f (ma) 10 0 2 4 6 8 10 20 30 40 50 60 70 80 60 c 50 c 40 c 30 c 20 c fig.1 optical output vs.operating current threshold current : i th (ma) package temperature : t c ( c) ? 10 0 10 ? 20 20 30 40 50 60 70 10 100 90 80 70 60 50 40 30 20 fig.2 dependence of threshold current on temperature optical power angle ( deg) ? 40 0 40 tc=25 c p o =2mw p o =10mw p o =8mw p o =6mw p o =4mw fig.3 parallel far field pattern p o =2mw optical power angle ( deg) ? 40 0 40 tc=25 c p o =10mw p o =8mw p o =6mw p o =4mw fig.4 perpendicular far field pattern relative optical intensity wavelength : ( nm) 770 775 780 785 790 t c =25 c p o =6mw p o =10mw p o =4mw p o =2mw fig.5 dependence of emission spectrum on optical output optical intensity : p o ( mw) monitor current : i m (ma) 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 fig.6 monitor current vs.optical output RLD78NZC3 laser diodes 3/3 wavelength : ( nm) package temperature : t c ( c) 60 40 p o =6mw 20 775 780 785 790 fig.7 dependence of wavelength on temperature 10 68 24 0 20 40 60 80 droop (%) optical power ( mw) t c =60 c t c =50 c t c =40 c t c =30 c t c =25 c fig. 8 dependence of droop on output and temperature temperature ( c) optical power ( mw) 24 06810 25 30 40 50 60 drp=30% drp=20% drp=10% fig. 9 temperature vs. output guidelines for various droop percentages |
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