tm ?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FJY3002R rev. b FJY3002R npn epitaxial silicon transistor july 2007 FJY3002R npn epitaxial silicon transistor features ? switching circuit, inverter, in terface circuit, driver circuit ? built in bias resistor (r1=10k ? , r2=10k ? ) ? complement to fjy4002r absolute maximum ratings * t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may by impaired. thermal characteristics* t a =25 c unless otherwise noted * minimum land pad size. electrical charact eristics* t c = 25c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 10 v i c collector current 100 ma t stg storage temperature range -55~150 c t j junction temperature 150 c p c collector power dissipation , by r ja 200 mw symbol parameter max units r ja thermal resistance, junction to ambient 600 c/w symbol parameter test condition min typ max units v (br)cbo collector-emitter breakdown voltage i c = 10 ua, i e = 0 50 v v (br)ceo collector-base breakdown voltage i c = 100 ua, i b = 0 50 v i cbo collector-cutoff current v cb = 40 v, i e = 0 0.1 ua h fe dc current gain v ce = 5 v, i c = 5 ma 30 v ce( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 0.5 ma 0.3 v f t current gain - bandwidth product v ce = 10v, i c = 5 ma 250 mhz c cb output capacitance v cb = 10 v, i e = 0, f = 1.0 mhz 3.7 pf v i( off ) input off voltage v ce = 5 v, i c = 100ua 0.5 v v i( on) input on voltage v ce = 0.3v, i c = 10ma 3 v r 1 input resistor 7 10 13 k ? r 1 /r 2 resistor ratio 0.9 1.0 1.1 sot - 523f e b c eq u ivalent circuit be c s02
2 www.fairchildsemi.com FJY3002R rev. b FJY3002R npn epitaxial silicon transistor typical performance characteristics figure 1. dc current gain figure 2. input on voltage figure 3. i nput off voltage figure 4. power derating 1 10 100 1000 10 100 1000 v ce = 5v r 1 = 10k r 2 = 10k h fe , dc current gain i c [ma], collector current 0.1 1 10 100 0.1 1 10 100 v ce =0.3v r 1 = 10 k r 2 = 10 k v i (on)[v], input voltage i c [ma], collector current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 10 100 1000 v ce = 5v r 1 = 10k r 2 = 10k i c [ a], collector current v i (off)[v], input off voltage 0 25 50 75 100 125 150 175 0 40 80 120 160 200 240 280 p c [mw], power dissipation t a [ o c], ambient temperature
3 www.fairchildsemi.com FJY3002R rev. b FJY3002R npn epitaxial silicon transistor package dimensions sot-523f dimensions in millimeters
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