AOD458 250v,14a n-channel mosfet general description product summary 300v@150 i d (at v gs =10v) 14a r ds(on) (at v gs =10v) <0.28 ? 100% uis tested! 100% r g tested! symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r cs r jc maximum junction-to-ambient a,g t c =25c - 55 maximum thermal characteristics units c/w 45 parameter typical w w/ o c maximum lead temperature for soldering p ur p ose, 1/8" from case for 5 seconds 300 c junction and storage temperature range -50 to 175 c power dissipation b v 30 gate-source voltage t c =100c a i d t c =25c 14 10 32 the AOD458 has been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac -dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 250 pulsed drain current c continuous drain current b mj avalanche current c 173 repetitive avalanche energy c 1 a 3.4 single pulsed avalanche energy h 346 mj v/ns 5 p d maximum case-to-sink a maximum junction-to-case d,f c/w c/w 0.7 0.5 1 derate above 25 o c 150 g d s g s d g s d top view to252 dpak bottom view rev0: april 2011 www.aosmd.com page 1 of 6
AOD458 symbol min typ max units 250 300 bv dss / ? tj 0.27 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3 3.8 4.5 v r ds(on) 0.22 0.28 ? g fs 10 s v sd 0.74 1 v i s maximum body-diode continuous current 14 a i sm 32 a c iss 505 637 770 pf c oss 70 104 140 pf c rss 3 7.1 12 pf r g 1.3 2.6 3.9 ? q g 91215nc q gs 3.8 nc q gd 4.6 nc t d(on) 21 ns t r 58 ns t d(off) 29 ns t f 33 ns t rr 120 150 180 ns q rr 1 1.24 1.5 c this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =14a,di/dt=100a/ s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =200v, i d =14a gate source charge gate drain charge i s =1a,v gs =0v v ds =40v, i d =7a v ds =0v, v gs =30v v gs =10v, i d =7a i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c v ds =5v, i d =250 a v ds =200v, t j =125c zero gate voltage drain current id=250a, vgs=0v i dss zero gate voltage drain current v ds =250v, v gs =0v i f =14a,di/dt=100a/ s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss a v drain-source breakdown voltage body diode reverse recovery time static drain-source on-resistance dynamic parameters turn-on rise time forward transconductance v gs =10v, v ds =125v, i d =14a, r g =25 ? gate resistance diode forward voltage reverse transfer capacitance a. the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =175c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedance from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. l=60mh, i as =3.4a, v dd =150v, r g =10 ? , starting t j =25c rev0: april 2011 www.aosmd.com page 2 of 6
AOD458 typical electrical and thermal characteristic s 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c i d =30a 25c 125c 0 5 10 15 20 25 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2345678910 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =7a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) rev0: april 2011 www.aosmd.com page 3 of 6
AOD458 typical electrical and thermal characteristic s 0 3 6 9 12 15 048121620 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =200v i d =14a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) t j(max) =175c t c =25c 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =1c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse sin g le puls e t on t p d rev0: april 2011 www.aosmd.com page 4 of 6
AOD458 typical electrical and thermal characteristic s 0 30 60 90 120 150 180 0 25 50 75 100 125 150 175 t case (c) figure 12: power de-rating (note b) power dissipation (w) 0 3 6 9 12 15 0 25 50 75 100 125 150 175 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 100 200 300 400 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-ambient (note g) power (w) t a =25c 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =55c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev0: april 2011 www.aosmd.com page 5 of 6
AOD458 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd char ge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d( on) t on t d(of f ) t f t of f vdd vgs id vgs rg du t - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds is d is d diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev0: april 2011 www.aosmd.com page 6 of 6
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