2007. 5. 16 1/2 semiconductor technical data kdz6.8de revision no : 3 zener diode silicon epitaxial planar diode esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ type name marking d1 constant voltage regulation application. features h small package for portable electronics. h normal voltage tolerance about ? 5%. h low leakage current. applications h cell phone handsets and accessories. h microprocessor based equipment. h personal digital assistants (pda s). h notebooks, desktops, & servers. h portable instrument h pagers peripherals. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit power dissipation p d 150 mw junction temperature t j 150 ? storage temperature t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit zener voltage v z i t =5ma 6.65 - 7.45 v reverse leakage current i r v r =3.5v - - 0.5 a total capacitance c t v r =0v, f=1mhz - - 5.0 pf
2007. 5. 16 2/2 kdz6.8de revision no : 3 reverse currnet i r (na) i r - v r 0 0.00001 0.0001 1234 0.001 0.01 0.1 1 10 100 zener current i z (ma) 0.01 7 6 5 zener voltage v z (v) reverse voltage (v) v z - i z 8910 0.1 1 10 power dissipation p d (mw) p d - ta 0 0 50 100 150 200 50 100 150 200 ambient temperature ta ( c) * mounted on a glass epoxy circuit board of 20 x 20mm pad dimension of 4 x 4mm capacitance c j (pf) 0 2 1 0 reverse voltage v r (v) c j - v r 345 1 2 4 3 150 c 125 c 75 c 25 c ta= -25 c ta=150 c 125 c 75 c 25 c -25 c
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