december 2011 FDB024N08BL7 n-ch annel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDB024N08BL7 rev. c1 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 80 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c, silicon limited) 229* a -continuous (t c = 100 o c, silicon limited) 162* -continuous (t c = 25 o c, package limited) 120 i dm drain current - pulsed (note 1) 916 a e as single pulsed avalanche energy (note 2) 917 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 246 w - derate above 25 o c1.64w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.61 o c/w r ja thermal resistance, junction to ambient 62.5 d(pin4, tab) g s(pin2,3,5,6,7) (pin1) fdb series with suffix - l7 d 2 -pak-7l *calculated continuous current based on maximum allowable junction temperature. package limitation current is 120a FDB024N08BL7 n-channel powertrench ? mosfet 80v, 229a, 2.4m features ?r ds(on) = 1.7m ( typ.) @ v gs = 10v, i d = 100a ?low fom r ds(on) * q g ? low reverse recovery charge, q rr ? soft reverse recovery body diode ? enables highly efficiency in synchronous rectification ? fast switching speed ?rohs compliant ? qualified according to jedec standards jesd22-a113f and ipc/jedec j-std-020d.1 description this n-channel mosfet is produced using fairchild semiconductor?s advance powert rench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? synchronous rectification for server / telecom psu ? battery charger and battery protection circuit ? dc motor drives and uninterruptible power supplies ? micro solar inverter
FDB024N08BL7 n-ch annel powertrench ? mosfet FDB024N08BL7 rev. c1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdb020n08b fdb020n08bl7 d2-pak-7l 330 mm 24 mm 800 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 80 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.05 - v/ o c i dss zero gate voltage drain current v ds = 64v, v gs = 0v - - 1 a v ds = 64v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-4.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 100a - 1.7 2.4 m g fs forward transconductance v ds = 10v, i d = 100a (note 4) - 227 - s c iss input capacitance v ds = 40v, v gs = 0v f = 1mhz - 10170 13530 pf c oss output capacitance - 1670 2220 pf c rss reverse transfer capacitance - 35 - pf c oss (er) engry related output capacitance v ds = 40v, v gs = 0v - 3025 - pf q g(tot) total gate charge at 10v v ds = 40v, v gs = 10v i d = 100a (note 4, 5) - 137 178 nc q gs gate to source gate charge - 56 - nc q gs2 gate charge threshold to plateau - 25 - nc q gd gate to drain ?miller? charge - 28 - nc esr equivalent series resistance (g-s) drain open, f = 1mhz - 2.4 - t d(on) turn-on delay time v dd = 40v, i d = 100a v gs = 10v, r gen = 4.7 (note 4, 5) - 47 104 ns t r turn-on rise time - 66 142 ns t d(off) turn-off delay time - 87 184 ns t f turn-off fall time - 41 92 ns i s maximum continuous drain to source diode forward current - - 229* a i sm maximum pulsed drain to source diode forward current - - 916 a v sd drain to source diode forward voltage v gs = 0v, i sd = 100a - - 1.3 v t rr reverse recovery time v gs = 0v, v dd = 40v, i sd = 100a di f /dt = 100a/ s (note 4) -80-ns q rr reverse recovery charge - 112 - nc notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 3mh, i as = 24.72a, r g = 25 , starting t j = 25 c 3. i sd 100a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, dual cycle 2% 5. essentially independent of operating temperature typical characteristics
FDB024N08BL7 n-ch annel powertrench ? mosfet FDB024N08BL7 rev. c1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 1 10 100 500 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.01 0.1 1 5 0.1 1 10 100 500 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 6.5v 6.0v 5.5v 5.0v 0.2 0.4 0.6 0.8 1.0 1.2 1.3 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 100 200 300 400 1.0 1.2 1.4 1.6 1.8 2.0 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0 30 60 90 120 150 0 2 4 6 8 10 *note: i d = 100a v ds = 16v v ds = 40v v ds = 64v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 80 10 100 1000 10000 30000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FDB024N08BL7 n-ch annel powertrench ? mosfet FDB024N08BL7 rev. c1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive switching capab ility -80 -40 0 40 80 120 160 200 0.92 0.96 1.00 1.04 1.08 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 200 0.6 0.9 1.2 1.5 1.8 2.1 *notes: 1. v gs = 10v 2. i d = 100a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 i d , drain current [a] t c , case temperature [ o c ] v gs = 10v r jc = 0.61 o c/w 0.1 1 10 100 0.01 0.1 1 10 100 1000 2000 100us 10us 10ms 1ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 0.1 1 10 100 1000 1 10 50 if r = 0 t av = (l) ( i as ) / ( 1.3*rated bv dss -v dd ) if r = 0 t av = (l/r)in [( i as *r ) / ( 1.3*rated bv dss -v dd ) +1 ] starting t j = 25 o c starting t j = 150 o c i as , avalanche current [a] t av , time in avalanche [ms] 0 20406080 0 1 2 3 4 5 6 e oss , [ j ] v ds , drain to source voltage [ v ]
FDB024N08BL7 n-ch annel powertrench ? mosfet FDB024N08BL7 rev. c1 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 12 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.005 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.61 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDB024N08BL7 n-ch annel powertrench ? mosfet FDB024N08BL7 rev. c1 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDB024N08BL7 n-ch annel powertrench ? mosfet FDB024N08BL7 rev. c1 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDB024N08BL7 n-ch annel powertrench ? mosfet FDB024N08BL7 rev. c1 www.fairchildsemi.com 8 dimensional outlin e and pad layout d2-pak-7l
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