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  unisonic technologies co., ltd MJE13005-Q npn silicon transistor www.unisonic.com.tw 1 of 6 copyright ? 2015 unisonic technologies co., ltd qw-r221-027.a npn silicon power transistors ? description these devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. they are particularly suited for 115 and 220 v switchmode. ? features * v ceo(sus) = 400 v * reverse bias soa with inductive loads @ t c = 100 * inductive switching matrix 2 to 4 amp, 25 and 100 t c @ 3a, 100 is 180 ns (typ) * 700v blocking capability * soa and switching applications information ? applications * switching regulator?s, inverters * motor controls * solenoid/relay drivers * deflection circuits ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 mje13005l-x-t60-k mje13005g-x -t60-k to-126 b c e bulk mje13005l-x-ta3-t mje13005g-x-ta3-t to-220 b c e tube mje13005l-x-tms-t mje13005g-x-tms-t to-251s b c e tube note: pin assignment: b: base c: collector e: emitter (1) t: tube, k: bulk, r: tape reel (2) ta3: to-220 , tms: to-251s, t60: to-126 (3) x: refer to classification of h fe1 (4) l: lead free, g: halogen free and lead free mje13005l -x -ta3 -t (1)packing type (2)package type (4)green package (3)rank ? marking to-220 / to-251s to-126
MJE13005-Q npn silicon transistor unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r221-027.a ? absolute maximum ratings parameter symbol ratings unit collector-emitter voltage v ceo ( sus ) 400 v collector-emitter voltage (v be =0) v ces 700 v collector-base voltage v cbo 700 v emitter base voltage v ebo 9 v collector current continuous i c 4 a peak (1) i cm 8 a base current continuous i b 2 a peak (1) i bm 4 a emitter current continuous i e 6 a peak (1) i em 12 a power dissipation at t a =25 to-126 p d 40 w to-251s 50 to-220 75 derate above 25 to-126 320 mw/ to-251s 400 to-220 600 operating and storage ju nction temperature t j , t stg -65 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient to-126 ja 89 /w to-251s 110 to-220 62.5 junction to case to-126 jc 3.125 /w to-251s 2.5 to-220 1.67
MJE13005-Q npn silicon transistor unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r221-027.a ? electrical characteristics (t c =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics (note 1) collector-emitter sustaining voltage v ceo ( sus ) i c =10ma , i b =0 400 v collector cutoff current i cbo v cbo =rated value, v be ( off ) =1.5v 1 ma v cbo =rated value, v be ( off ) =1.5v, t c =100 5 emitter cutoff current i ebo v eb =9v, i c =0 1 ma second breakdown second breakdown collector current with bass forward biased i s/b see fig. 11 clamped inductive soa with base reverse biased rbsoa see fig. 12 on characteristics (note 1) dc current gain h fe1 i c =0.5a, v ce =5v 15 50 h fe2 i c =1a, v ce =5v 10 60 h fe3 i c =2a, v ce =5v 8 40 collector-emitter satu ration voltage v ce(sat) i c =1a, i b =0.2a 0.12 0.5 v i c =2a, i b =0.5a 0.18 0.6 v i c =4a, i b =1a 0.7 1 v i c =2a, i b =0.5a, ta=100 1 v base-emitter satura tion voltage v be (sat) i c =1a, i b =0.2a 0.85 1.2 v i c =2a, i b =0.5a 0.92 1.6 v i c =2a, i b =0.5a, t c =100 1.5 v dynamic characteristics current-gain-bandwidth product f t i c =500ma, v ce =10v, f=1mhz 4 mhz output capacitance c ob v cb =10v, i e =0, f=0.1mhz 65 pf switching characteristics resistive load (table 1) delay time t d v cc =125v, i c =2a, i b1 =i b2 =0.4a, t p =25 s, duty cycle 1% 0.025 0.1 s rise time t r 0.3 0.7 s storage time t s 6 s fall time t f 0.4 0.9 s note: 1. pulse test: pulse width=5ms, duty cycle 10% note: 2. pulse test: p w =300 s, duty cycle 2% ? classification of h fe1 rank a b c d e range 15 ~ 20 20 ~ 25 25 ~ 30 30 ~ 40 40 ~ 50
MJE13005-Q npn silicon transistor unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r221-027.a ? application information table 1.test conditions for dynamic performance reverse bias safe operating area and inductive switching resistive switching test circuits p w 5v duty cycle Q 10% t r , t f Q 10ns 68 0.001 f 1k 1n4933 0.02 f 270 +5v 1k 1k 33 1n4933 1n4933 33 +5v r b mje210 i b 2n2222 2n2905 47 1/2w 100 mje200 -v be (off) t.u.t. v cc mr826* vclamp *selected for R 1kv 5.1k 51 v ce l i c note: p w and v cc adjusted for desired i c r b adjusted for desired i b1 +125v r b d1 -4.0v scope r c tut circuit values coil data : gap for 200 h/20 a v cc =20v ferroxcube core #6656 l coil =200 h v clamp =300v full bobbin ( ~ 16 turns) #16 v cc =125v r c =62 ? d1=1n5820 or equiv. rb=22 ? test waveforms output waveforms i c i c(pk) t f unclamped t 2 t t f t 1 v ce time t 2 t v ce or v clamp t f clamped t 1 adjusted to obtain ic test equipment scope-tektronics 475 or equivalent t 1 = l coil (i cpk ) v cc t 2 = l coil (i cpk ) v clamp
MJE13005-Q npn silicon transistor unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r221-027.a ? resistive switching performance t i m e , t ( s ) t i m e , t ( s ) t r a n s i e n t t h e r m a l r e s i s t a n c e , r ( t ) ( n o r m a l i z e d ) c o l l e c t o r c u r r e n t , i c ( a ) c o l l e c t o r c u r r e n t , i c ( p k ) ( a )
MJE13005-Q npn silicon transistor unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r221-027.a ? resistive switching performance(cont.) fig. 6 forward bias power derating case temperature, t c ( ) 1 0.8 0.6 0.4 0 20 40 60 80 100 120 140 160 second breakdown derating thermal derating 0.2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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