MCH5819 no.7454-1/5 features ? composite type with a n-channel sillicon mosfet (mch3408) and a schottky barrier diode (sbs006m) contained in one package facilitating high-density mounting. [mosfet] ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. [sbd] ? short reverse recovery time. ? low forward voltage. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7454 MCH5819 package dimensions unit : mm 2195 [MCH5819] mosfet : n-channel silicon mosfet sbd : schottky barrier diode dc / dc converter applications specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss 30 v gate-to-source voltage v gss 20 v drain current (dc) i d 1.4 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 5.6 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 30 v nonrepetitive peak reverse surge voltage v rsm 30 v average output current i o 0.5 a surge forward current i fsm 50hz sine wave, 1 cycle 3 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : qv any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 33004 ts im ta-100373 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain sanyo : mcph5 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 1 32 4 5 123 54 (bottom view) (top view)
MCH5819 no.7454-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =700ma 0.85 1.2 s static drain-to-source on-state resistance r ds (on)1 i d =700ma, v gs =10v 230 300 m w r ds (on)2 i d =400ma, v gs =4v 370 520 m w input capacitance ciss v ds =10v, f=1mhz 70 pf output capacitance coss v ds =10v, f=1mhz 15 pf reverse transfer capacitance crss v ds =10v, f=1mhz 10 pf turn-on delay time t d (on) see specified test circuit. 6 ns rise time t r see specified test circuit. 3 ns turn-off delay time t d (off) see specified test circuit. 10 ns fall time t f see specified test circuit. 4 ns total gate charge qg v ds =10v, v gs =10v, i d =1.4a 2.6 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =1.4a 0.6 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =1.4a 0.5 nc diode forward voltage v sd i s =1.4a, v gs =0 0.9 1.2 v [sbd] reverse voltage v r i r =0.5ma 30 v forward voltage v f 1i f =0.3a 0.35 0.40 v v f 2i f =0.5a 0.42 0.47 v reverse current i r v r =10v 200 m a interterminal capacitance c v r =10v, f=1mhz 20 pf reverse recovery time t rr i f =i r =100ma see specified test circuit. 10 ns electrical connection switching time test circuit t rr test circuit [mosfet] [sbd] duty 10% 50 100 10 --5v t rr 100ma 100ma 10ma 10 s 123 54 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain (top view) pw=10 m s d.c. 1% p. g 50 w g s d i d =700ma r l =21.4 w v dd =15v v out MCH5819 v in 10v 0v v in
MCH5819 no.7454-3/5 static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m i d =0.4a 0.7a 5 0.1 1.0 757 22 33 0.2 0.4 0.6 0.8 1.0 1.2 1.4 --60 --40 --20 0 20 40 60 80 100 120 140 160 02 14 36 58 710 9 gate-to-source voltage, v gs -- v r ds (on) -- v gs it03099 0 0 0.5 1.5 2.0 0.2 1.0 0 100 200 300 400 500 600 700 800 0 0.4 0.6 0.8 1.0 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a v gs =3v 4v it03097 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a v ds =10v 25 c 75 c ta= --25 c it03098 25 c --25 c ta=75 c ambient temperature, ta -- c r ds (on) -- ta it03100 100 200 300 400 500 600 700 800 0 ta=25 c 5v 6v 8v 10v i d =0.7a, v gs =10v i d =0.4a, v gs =4v 5 3 2 10 7 5 3 2 1.0 drain current, i d -- a sw time -- i d switching time, sw time -- ns v dd =15v v gs =10v t d (on) t d (off) t f t r it03103 ciss, coss, crss -- v ds drain current, i d -- a it03101 0.01 0.1 23 57 23 57 1.0 23 57 10 10 1.0 7 5 3 2 7 5 3 2 0.1 forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d v ds =10v ta=75 c 25 c --25 c it03102 0 0.2 0.4 0.6 0.8 1.0 1.4 1.2 0.01 0.1 10 1.0 7 5 3 2 7 5 3 2 7 5 3 2 diode forward voltage, v sd -- v forward current, i f -- a i f -- v sd v gs =0 --25 c 25 c ta=75 c 0 5 10 15 20 25 30 1.0 10 100 7 5 3 2 7 5 3 2 drain-to-source voltage, v ds -- v ciss, coss, crss -- pf f=1mhz ciss coss crss it03104 [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet]
MCH5819 no.7454-4/5 0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v v ds =10v i d =1.4a it03105 0 0 20 40 0.2 0.4 0.6 0.8 1.0 60 80 100 120 140 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it05807 mounted on a ceramic board(900mm 2 5 0.8mm)1unit a s o drain-to-source voltage, v ds -- v drain current, i d -- a 2 3 5 7 2 3 5 7 2 3 5 7 10 1.0 0.1 0.01 0.1 23 57 1.0 0.01 23 57 23 57 10 23 5 it05806 i dp =5.6a i d =1.4a operation in this area is limited by r ds (on). 100ms 100ms dc operation 1ms 10ms <10ms [sbd] [sbd] [sbd] [mosfet] [mosfet] [sbd] [mosfet] 180 360 q 360 (2) (3) (4) (1) 1.0 10 2 2 3 5 10 100 7 7 357 23 reverse voltage, v r -- v c -- v r interterminal capacitance, c -- pf f=1mhz 0 100 10 1.0 0.1 0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 30 15 25 520 10 reverse voltage, v r -- v i r -- v r reverse current, i r -- ma 0 0 0.1 0.2 0.3 0.4 0.4 0.3 0.35 0.25 0.2 0.1 0.05 0.15 0.5 0.6 0.7 average forward current, i o -- a p f(av) -- i o average forward power dissipation, p f (av) -- w 0 0.1 0.01 0.4 0.2 1.0 2 7 5 3 2 7 5 3 2 0.6 forward voltage, v f -- v forward current, i f -- a i f -- v f ta=125 c 25 c 100 c ta=125 c 25 c 50 c 75 c 100 c it05808 it00633 it00634 it05809 50 c 75 c ta=25 c single pulse mounted on a ceramic board(900mm 2 5 0.8mm)1unit rectangular wave sine wave (1) rectangular wave q =60 (2) rectangular wave q =120 (3) rectangular wave q =180 (4) sine wave q =180
MCH5819 no.7454-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2004. specifications and information herein are subject to change without notice. ps i s 20ms t 7 0.01 23 7 0.1 0 5237 1.0 523 3.0 3.5 2.0 1.0 2.5 1.5 0.5 time, t -- s surge forward current, i fsm (peak) -- a id00338 i fsm -- t current waveform 50hz sine wave
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