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1. product profile 1.1 general description the clf1g0060-10 and CLF1G0060S-10 are 10 w general purpose broadband gan hemts usable from dc to 6.0 ghz. [1] pulsed rf; t p =15 ? s; ? = 10 %. [1] 2-tone cw; ? f=1mhz. clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt rev. 3 ? 30 may 2013 objective data sheet table 1. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq =40ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 200 10 17.7 42.6 500 10 16.7 46.6 1000 10 15 38.7 1500 10 14.3 32.6 2000 10 14.2 32.6 1-tone pulsed [1] 200 10 18.8 44 500 10 17.8 48.2 1000 10 16.8 39 1500 10 16.7 33.9 2000 10 17 33.2 table 2. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq =40ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 500 5 ? 47.4 1000 5 ? 48.7 1500 5 ? 44.7 2000 5 ? 39.2 2500 5 ? 40.4
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 2 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 1.2 features and benefits ? frequency of operation is from dc to 6.0 ghz ? 10 w general purpose broadband rf power gan hemt ? excellent ruggedness (vswr = 10 : 1) ? high voltage operation (50 v) ? thermally enhanced package 1.3 applications 2. pinning information [1] connected to flange. 3. ordering information ? commercial wireless infrastructure (cellular, wimax) ? industrial, scientific, medical ? radar ? jammers ? broadband general purpose amplifier ? emc testing ? public mobile radios ? defense application table 3. pinning pin description simplified outline graphic symbol clf1g0060-10 (sot1227a) 1drain 2gate 3source [1] CLF1G0060S-10 (sot1227b) 1drain 2gate 3source [1] ddd ddd table 4. ordering information type number package name description version clf1g0060-10 - flanged ceramic package; 2 mounting holes; 2 leads sot1227a CLF1G0060S-10 - earless flanged ceramic package; 2 leads sot1227b
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 3 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 4. limiting values 5. thermal characteristics [1] t j is measured via ir scan with case temperature of 85 ? c and power dissipation of 24 w. 6. characteristics table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 150 v v gs gate-source voltage ? 8+3 v i gf forward gate current external r g = 5 ? -3.7ma t stg storage temperature ? 65 +150 ?c t j junction temperature measured via ir scan - 250 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 200 ?c [1] 4.6 k/w table 7. dc characteristics t case = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs = ? 7 v; i ds =2.4ma 150 - - v v gs(th) gate-source threshold voltage v ds = 0.1 v; i ds =2.4ma ? 2.4 ? 2 ? 1.6 v i dsx drain cut-off current v ds =10v; v gs =3 v - 1.7 - a g fs forward transconductance v ds =10 v; v gs = 0 v - 0.38 - s table 8. rf characteristics test signal: pulsed rf; t p =100 ? s; ? = 10 %; rf performance at v ds =50v; i dq =50ma; t case = 25 ? c; unless otherwise specified in a class-ab production circuit. symbol parameter conditions min typ max unit f frequency 3 - 3.5 ghz ? d drain efficiency p l = 10 w - 49.5 - % g p power gain p l = 10 w - 14.5 - db rl in input return loss p l =10 w - ? 8.5 - db p droop(pulse) pulse droop power p l = 10 w - 0.04 - db t r rise time p l = 10 w - 5 - ns t f fall time p l = 10 w - 5 - ns
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 4 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 7. application information 7.1 demo circuit printed-circuit board (pcb ) material: taconic rf35, ? r = 3.5, thickness 30 mils, 1 oz copper on each side. see table 9 for list of components. fig 1. the broadband amplifier (500 mhz to 2500 mhz) demo circuit outline table 9. list of components see figure 1 . component description value remarks a1 gan bias module v2 - nxp c1 multilayer ceramic chip capacitor 3.9 pf atc 600f c2 multilayer ceramic chip capacitor 3.0 pf atc 600f c3 multilayer ceramic chip capacitor 1.2 pf atc 600f c4, c8 multilayer ceramic chip capacitor 33 pf atc 600f c9 multilayer ceramic chip capacitor 10 pf atc 600f c10 electrolytic capacitor 10 nf, 50 v smd 0805 c11 electrolytic capacitor 22 nf, 100 v smd 0805 c12 electrolytic capacitor 1 nf, 100 v smd 0805 ddd &/)*81,9(56$/,13875(9 5)&& &/)*81,9(56$/287387 5(9 5)&& 5 / 5 & & & $ 4 4 & & & & )% 9* ( % & *1' *1' *1' ' * 6 9 3 & & & 5 & & & & & / / & 3 3 3 5 ( ( &
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 5 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt c13 electrolytic capacitor 100 nf, 50 v smd 0805 c20 multilayer ceramic chip capacitor 1 nf atc 700b c21 multilayer ceramic chip capacitor 100 pf atc 700b c22, c26 electrolytic capacitor 10 nf, 200 v smd 1210 c23 electrolytic capacitor 10 ? f, 100 v smd 2220 c25 electrolytic capacitor 1 ? f, 100 v smd 1206 c27 electrolytic capacitor 470 ? f, 63 v panasonic eee-tk1j471am e1, e2 drain voltage connection - j1 rf in connector - j2 rf out connector - l1 inductor 100 nh coilcraft 0805cs-101xjl l2 inductor 28 nh coilcraft b08tjl l3 ferrite bead 5 a fair-rite 2743019447 p1, p2, p3, p4 1 row, 4-way vertical dc connector header - q1 transistor - clf1g0060-10 q2 transistor - nxp bc857b q3 transistor - nxp psmn8r2-80ys r1 resistor 10.0 ? generic r2 resistor 10.0 k ? generic r3 resistor 550 ? generic r4 resistor 0.01 ? susumu rl7520wt-r010-f table 9. list of components ?continued see figure 1 . component description value remarks
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 6 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 7.2 application test results [1] pulsed rf; t p =15 ? s; ? = 10 %. see table 9 for a list of components. fig 2. the broadband amplifier (500 mhz to 2500 mhz) demo circuit schematic *1' ,1 ' $ 4 %&% 4 &/)* & = 5 n = - 1) & s) s) [pp [pp *$1%,$6 02'8/( * 6 9* )% & % ( *1' *1' & s) & s) & q) & q) = [pp = [pp = [pp 5 & s) 5 & s) & ?) & q) / / q+ / q+ & ?) & ?)9 ( ( 9',1 *1' 5 4 36015<6 & s) & q) & q) & q) & s) - 1) ddd table 10. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq =40ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 200 10 17.7 42.6 500 10 16.7 46.6 1000 10 15 38.7 1500 10 14.3 32.6 2000 10 14.2 32.6 1-tone pulsed [1] 200 10 18.8 44 500 10 17.8 48.2 1000 10 16.8 39 1500 10 16.7 33.9 2000 10 17 33.2
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 7 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt [1] 2-tone cw; ? f=1mhz. 7.3 graphical data the following figures are measured in a broadband amplifier demo board from 500 mhz to 2500 mhz. 7.3.1 1-tone cw rf performance table 11. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq =40ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 500 5 ? 47.4 1000 5 ? 48.7 1500 5 ? 44.7 2000 5 ? 39.2 2500 5 ? 40.4 v ds = 50 v; i dq = 40 ma; p l =10w. v ds = 50 v; i dq = 40 ma. (1) g p at f = 200 mhz (2) g p at f = 1000 mhz (3) g p at f = 2000 mhz (4) ? d at f = 200 mhz (5) ? d at f = 1000 mhz (6) ? d at f = 2000 mhz fig 3. power gain and drain efficiency as function of frequency; typical values fig 4. power gain and drain efficiency as function of output power; typical values ddd i0+] * s s s g% ' * s ' ddd 3 / g%p * s s s g% '
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 8 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 7.3.2 1-tone pulsed rf performance v ds = 50 v; i dq = 40 ma; p l =10w; t p = 15 ? s; ? =1%. v ds = 50 v; i dq = 40 ma; t p = 15 ? s; ? =1%. (1) g p at f = 200 mhz (2) g p at f = 1000 mhz (3) g p at f = 2000 mhz (4) ? d at f = 200 mhz (5) ? d at f = 1000 mhz (6) ? d at f = 2000 mhz fig 5. power gain and drain efficiency as function of frequency; typical values fig 6. power gain and drain efficiency gain as function of output power; typical values ddd i0+] * s s s g% ' * s ' ddd 3 / g%p * s s s g% '
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 9 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 7.3.3 2-tone cw performance 7.3.4 bias module the bias module information for the gan hemt amplifier is described in application note ?an11130?. 8. test information 8.1 ruggedness in class-ab operation the clf1g0060-10 and CLF1G0060S-10 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =50v; p l = 10 w (pulsed rf), f = mhz. 8.2 load pull impedance information the measured load pull impedances are shown below. impedance reference plane defined at device leads. measurements performed with nxp test fixtures. test temperature set at 25 ? c with a pulsed cw signal; t p =100 ? s; ? = 10 %; rf performance at v ds =50v; i dq = 20 ma. v ds = 50 v; i dq =50ma; ? f=1mhz. (1) f = 300 mhz (2) f = 1100 mhz (3) f = 2000 mhz v ds = 50 v; i dq = 150 ma; p l(pep) =10 w. fig 7. third-order intermodulation distortion as a function of peak envelope power; typical values fig 8. third-order intermodulation distortion as a function of frequency; typical values ddd 3 /3(3 : ,0' g%f ddd i0+] ,0' g%f
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 10 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt z s is the measured source pull impedance presented to the device. z l is the measured load pull impedance presented to the device. table 12. typical impedance typical values unless otherwise specified. f z s z l (maximum p l(m) ) z l (maximum ? d ) mhz ? ? ? 2500 4.7 ? 3.8j 23.1 + 22.6j 12 + 28.4j 2700 4.5 ? 6.3j 19.5 + 22.2j 9.1 + 25.1j 3300 6.6 ? 14j 14 + 13.5j 7.9 + 18.6j 3500 6.5 ? 18j 12.7 + 14.7j 7.5 + 15.6j 3700 8.1 ? 22j 12.7 + 14.7j 6.7 + 14.6j 4000 8.3 ? 32j 9.5 + 13.8j 6.5 + 13.8j fig 9. definition of transistor impedance ddd gudlq vrxufh = 6 = / jdwh
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 11 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 8.3 packaged s-parameter data table 13. s-parameter small signal; v ds = 50 v; i dq = 20 ma; z s = z l = 50 ? f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) 100 0.99129 ? 23.269 21.314 164.59 0.0071276 75.423 0.95962 ? 10.001 200 0.96902 ? 44.968 19.981 150.22 0.013329 61.893 0.92382 ? 19.186 300 0.94116 ? 64.133 18.221 137.49 0.018152 50.009 0.87835 ? 27.146 400 0.91414 ? 80.511 16.383 126.5 0.021627 39.869 0.83352 ? 33.905 500 0.89101 ? 94.309 14.666 117.04 0.024008 31.278 0.79464 ? 39.708 600 0.87242 ? 105.92 13.145 108.84 0.025571 23.957 0.76322 ? 44.832 700 0.85792 ? 115.75 11.832 101.62 0.026538 17.641 0.73885 ? 49.499 800 0.84676 ? 124.16 10.706 95.167 0.027071 12.118 0.72048 ? 53.868 900 0.83822 ? 131.44 9.7421 89.316 0.027281 7.2229 0.70698 ? 58.039 1000 0.8317 ? 137.82 8.9136 83.937 0.027246 2.8351 0.69734 ? 62.075 1100 0.82673 ? 143.48 8.1977 78.936 0.027018 ? 1.1346 0.69074 ? 66.012 1200 0.82294 ? 148.57 7.5751 74.24 0.026636 ? 4.751 0.68654 ? 69.873 1300 0.82008 ? 153.2 7.0302 69.796 0.026128 ? 8.0607 0.68423 ? 73.666 1400 0.81793 ? 157.44 6.5504 65.559 0.025514 ? 11.096 0.6834 ? 77.399 1500 0.81633 ? 161.37 6.1253 61.499 0.024809 ? 13.878 0.68374 ? 81.073 1600 0.81517 ? 165.04 5.7467 57.588 0.024028 ? 16.42 0.68499 ? 84.69 1700 0.81435 ? 168.5 5.4078 53.806 0.023179 ? 18.725 0.68697 ? 88.25 1800 0.81379 ? 171 .78 5.103 50.136 0.022272 ? 20 .79 0.68951 ? 91.753 1900 0.81344 ? 174.91 4.8277 46.564 0.021316 ? 22.605 0.69248 ? 95.199 2000 0.81325 ? 177.92 4.5781 43.078 0.020316 ? 24.15 0.69577 ? 98.59 2100 0.81317 179.17 4.351 39.668 0.019282 ? 25.396 0.6993 ? 101.92 2200 0.81318 176.35 4.1437 36.326 0.018222 ? 26.304 0.70298 ? 105.21 2300 0.81325 173.6 3.954 33.045 0.017143 ? 26.82 0.70677 ? 108.43 2400 0.81336 170.91 3.7798 29.818 0.016058 ? 26.873 0.71061 ? 111.61 2500 0.8135 168.27 3.6196 26.639 0.014978 ? 26.372 0.71447 ? 114.74 2600 0.81364 165.66 3.4718 23.502 0.013923 ? 25.202 0.7183 ? 117.83 2700 0.81378 163.09 3.3353 20.404 0.012912 ? 23.223 0.72209 ? 120.87 2800 0.8139 160.54 3.2089 17.34 0.011978 ? 20.279 0.72581 ? 123.87 2900 0.81401 158 3.0917 14.305 0.011158 ? 16.219 0.72943 ? 126.83 3000 0.81409 155.48 2. 9828 11.296 0.0105 ? 10.954 0.73296 ? 129.76 3100 0.81414 152.96 2.8815 8.3092 0.010059 ? 4.5429 0.73637 ? 132.66 3200 0.81416 150.44 2.7871 5.341 0.00989 2.7229 0.73966 ? 135.53 3300 0.81415 147.91 2.6991 2.3882 0.010031 10.309 0.74282 ? 138.37 3400 0.8141 145.38 2.6169 ? 0.5524 0.010495 17.578 0.74585 ? 141.19 3500 0.81402 142.83 2.5399 ? 3.4839 0.011266 23.999 0.74874 ? 144 3 600 0.81392 140.27 2.4679 ? 6.4092 0.012313 29.286 0.75149 ? 146.78 3700 0.81378 137.69 2.4004 ? 9.3313 0.013594 33.387 0.7541 ? 149.56
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 12 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 3800 0.81362 135.09 2.337 ? 12.253 0.015073 36.394 0.75657 ? 152.33 3900 0.81344 132.46 2.2775 ? 15.177 0.016718 38.458 0.75891 ? 155.09 4000 0.81325 129.8 2.2215 ? 18.106 0.018506 39.738 0.76111 ? 157.86 4100 0.81305 127.11 2.1687 ? 21.043 0.020419 40.375 0.76318 ? 160.63 4200 0.81286 124.39 2.119 ? 23.991 0.022446 40.485 0.76513 ? 163.4 4300 0.81267 121.64 2.072 ? 26.952 0.024575 40.163 0.76694 ? 166.19 4400 0.8125 118.84 2.0276 ? 29.928 0.026802 39.483 0.76865 ? 168.99 4500 0.81236 116.01 1.9856 ? 32.922 0.029121 38.504 0.77023 ? 171.81 4600 0.81226 113.13 1.9457 ? 35.937 0.031528 37.269 0.77171 ? 174.65 4700 0.81221 110.22 1.9078 ? 38.976 0.034021 35.816 0.77309 ? 177.52 4800 0.81222 107.25 1.8718 ? 42.04 0.036598 34.172 0.77438 179.58 4900 0.81231 104.25 1.8374 ? 45.132 0.039257 32.359 0.77558 176.64 5000 0.81249 101.19 1.8045 ? 48.254 0.041996 30.394 0.77669 173.66 5100 0.81278 98.091 1.7729 ? 51.409 0.044813 28.293 0.77774 170.63 5200 0.81319 94.941 1.7426 ? 54.599 0.047706 26.065 0.77873 167.55 5300 0.81374 91.743 1.7133 ? 57.826 0.050674 23.72 0.77966 164.42 5400 0.81444 88.496 1.685 ? 61.092 0.053712 21.266 0.78055 161.22 5500 0.81531 85.202 1.6575 ? 64.4 0.056818 18.706 0.7814 157.96 5600 0.81637 81.859 1.6307 ? 67.75 0.059987 16.048 0.78224 154.63 5700 0.81764 78.47 1.6044 ? 71.146 0.063214 13.293 0.78307 151.22 5800 0.81912 75.035 1.5786 ? 74.588 0.066493 10.446 0.78391 147.73 5900 0.82083 71.556 1.5531 ? 78.079 0.069817 7.508 0.78477 144.15 6000 0.82279 68.034 1.5277 ? 81.619 0.073177 4.4824 0.78566 140.48 table 13. s-parameter ?continued small signal; v ds = 50 v; i dq = 20 ma; z s = z l = 50 ? f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree)
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 13 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 9. package outline fig 10. package outline sot1227a 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627$ )odqjhgfhudplfsdfndjhprxqwlqjkrohvohdgv 627$ vrwdbsr 8qlw pp pd[ qrp plq $ 'lphqvlrqv e' (( +s 48 8 lqfkhv pd[ qrp plq f ' ) z t 1rwh 0loolphwhuglphqvlrqvduhghulyhgiurpwkhruljlqdolqfkglphqvlrqv z vfdoh pp e ' $ ) ' t 8 & % 8 $ + s z $ % ( ( f 4 z & '5$)7
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 14 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt fig 11. package outline sot1227b 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627% (duohvv)odqjhgfhudplfsdfndjhohdgv 627% vrwebsr 8qlw pp pd[ qrp plq $ 'lphqvlrqv e' (( +4 8 z lqfkhv pd[ qrp plq f ' ) 8 1rwh 0loolphwhuglphqvlrqvduhghulyhgiurpwkhruljlqdolqfkglphqvlrqv vfdoh pp e ' ) 8 ' + ( ( 8 f 4 z ' $ ' '5$)7
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 15 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 10. handling information 10.1 esd sensitivity [1] classification 1b is granted to any part that passes after exposure to an esd pulse of 500 v, but fails after exposure to an esd pulse of 1000 v. 11. abbreviations 12. revision history table 14. esd sensitivity esd model class human body model (hbm); according jedec standard jesd22-a114f 1b [1] table 15. abbreviations acronym description cw continuous wave emc electromagnetic compatibility esd electrostatic discharge gan gallium nitride hemt high electron mobility transistor smd surface-mounted device vswr voltage standing-wave ratio wimax worldwide interoperability for microwave access table 16. revision history document id release date data sheet status change notice supersedes clf1g0060-10_1g0060s-10 v.3 20130530 objective data sheet - clf1g0060-10_1g0060s-10 v.2 modifications: ? table 6 on page 3 : table has been updated. clf1g0060-10_1g0060s-10 v.2 20130129 objective data sheet - clf1g0060-10_1g0060s-10 v.1 clf1g0060-10_1g0060s-10 v.1 201 21008 objective data sheet - -
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 16 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
clf1g0060-10_1g0060s-10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 3 ? 30 may 2013 17 of 18 nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors clf1g0060-10; CLF1G0060S-10 broadband rf power gan hemt ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 30 may 2013 document identifier: clf1g0060-10_1g0060s-10 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 2 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 application test results . . . . . . . . . . . . . . . . . . . 6 7.3 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.3.1 1-tone cw rf performance. . . . . . . . . . . . . . . 7 7.3.2 1-tone pulsed rf performance . . . . . . . . . . . . 8 7.3.3 2-tone cw performance . . . . . . . . . . . . . . . . . 9 7.3.4 bias module . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 8.1 ruggedness in class-ab operation . . . . . . . . . 9 8.2 load pull impedance information . . . . . . . . . . . 9 8.3 packaged s-parameter data. . . . . . . . . . . . . . 11 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 10 handling information. . . . . . . . . . . . . . . . . . . . 15 10.1 esd sensitivity . . . . . . . . . . . . . . . . . . . . . . . . 15 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 16 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 14 contact information. . . . . . . . . . . . . . . . . . . . . 17 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

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