digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 3N201-3n203 dual gate mosfet vhf amplifier maximum ratings rating symbol value unit drain-source voltage v ds 25 vdc v dg1 drain-gate voltage v dg2 30 vdc drain current i d 50 madc i g1 gate current i g2 10 madc total device dissipation @ t a = 25c derate above 25c p d 360 2.4 mw mw/c total device dissipation @ t c = 25c derate above 25c p d 1.2 8.0 w mw/c lead temperature t l 300 c junction temperature range t j -65 to 175 c storage temperature range t stg -65 to 175 c electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain-source breakdown voltage (i d = 10adc, v s = 0, v g1s = v g2s = -5.0vdc) v (br)dsx 25 - - vdc gate 1-source breakdown voltage (1) (i g1 = 10madc, v g2s = v ds = 0) v (br)g1so 6.0 12 30 vdc gate 2-source breakdown voltage (1) (i g2 = 10madc, v g1s = v ds = 0) v (br)g2so 6.0 12 30 vdc gate 1 leakage current (v g1s = 5.0vdc, v g2s = vds = 0) (v g1s = -5.0vdc, v g2s = vds = 0, t a = 150c) i g1ss - - 0.040 - 10 -10 nadc adc gate 2 leakage current (v g2s = 5.0vdc, v g1s = v ds = 0) (v g2s = -5.0vdc, v g1s = v ds = 0, t a = 150c) i g2ss - - 0.050 - 10 -10 nadc adc gate 1 to source cutoff voltage (v ds = 15vdc, v g2s = 4.0vdc, i d = 20adc) v g1s(off) -0.5 -1.5 -5.0 vdc gate 2 to source cutoff voltage (v ds = 15vdc, v g1s = 0, i d = 20adc) v g2s(off) -0.2 -1.4 -5.0 vdc on characteristics zero-gate voltage drain current (2) (v ds = 15vdc, v g1s = 0, v g2s = 4.0vdc) 3N201, 3n202 3n203 i dss 6.0 3.0 13 11 30 15 madc small signal characteristics forward transfer admittance (3) (v ds = 15vdc, v g2s = 4.0vdc, v g1s = 0, f = 1.0khz) 3N201, 3n202 3n203 |y fs | 8.0 7.0 12.8 12.5 20 15 mmhos input capacitance (v ds = 15vdc, v g2s = 4.0vdc, i d = i dss , f = 1.0mhz) c iss - 3.3 - pf reverse transfer capacitance (v ds = 15vdc, v g2s = 4.0vdc, i d = 10madc, f = 1.0mhz) c rss 0.005 0.014 0.03 pf output capacitance (v ds = 15vdc, v g2s = 4.0vdc, i d = i dss , f = 1.0mhz) c oss - 1.7 - pf sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 3N201-3n203 dual gate mosfet vhf amplifier electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min typ max unit functional characteristics noise figure (v dd = 18vdc, v gg = 7.0vdc, f = 200mhz) (v dd = 18vdc, v gg = 6.0vdc, f = 45mhz) 3N201 3n203 nf - - 1.8 5.3 4.5 6.0 db common source power gain (v dd = 18vdc, v gg = 7.0vdc, f = 200mhz) (v dd = 18vdc, v gg = 6.0vdc, f = 45mhz) (v dd = 18vdc, f lo = 245mhz, f rf = 200mhz) 3N201 3n203 3n202 g ps g c (5) 15 20 15 20 25 19 25 30 25 db bandwidth (v dd = 18vdc, v gg = 7.0vdc, f = 200mhz) (v dd = 18vdc, f lo = 245mhz, f rf = 200mhz) (v dd = 18vdc, v gg = 6.0vdc, f = 45mhz) 3N201 3n202 3n203 b w 5.0 4.5 3.0 - - - 9.0 7.5 6.0 mhz gain control gate-supply voltage (4) (v dd = 18vdc, g ps = -30db, f = 200mhz) (v dd = 18vdc, g ps = -30db, f = 45mhz) 3N201 3n203 v gg(gc) 0 0 -1.0 -0.6 -3.0 -3.0 vdc note 1: all gate breakdown voltages are measured while the device is conducting rated gate current. this ensures that the gate- voltage limiting network is functioning properly. note 2: pulse test: pulse width = 300s. duty cycle 2.0%. note 3: this parameter must be measured with bias volt ages applied for less than 5 seconds to avoid overheating. note 4: gps is defined as the change from the value at v gg = 7.0v and v gg = 6.0v. note 5: power gain conversion. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 3N201-3n203 dual gate mosfet vhf amplifier sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 3N201-3n203 dual gate mosfet vhf amplifier sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 3N201-3n203 dual gate mosfet vhf amplifier sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 3N201-3n203 dual gate mosfet vhf amplifier inches millimeters dim min max min max a - 0.230 - 5.840 b - 0.195 - 4.950 c - 0.210 - 5.330 d - 0.021 - 0.530 e - 0.030 - 0.760 f - 0.019 - 0.480 g 0.100 bsc 2.540 bsc h - 0.046 - 1.170 j - 0.0480 - 1.220 k 0.500 - 12.700 - l 0.250 - 6.350 - m 45c bsc 45c bsc n 0.050 bsc 1.270 bsc p - 0.050 - 1.270 to-72 available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
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