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this is information on a product in full production. february 2014 docid022261 rev 5 1/18 STL8DN6LF3 automotive-grade dual n-channel 60 v, 22.5 m ? typ., 7.8 a stripfet? iii power mosfet in a powerflat? 5x6 double island package datasheet ? production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? logic level v gs(th) ? 175 c junction temperature ? 100% avalanche rated ? wettable flank package applications ? switching applications description this device is an n-channel enhancement mode power mosfet produced using stmicroelectronics? stripfet? iii technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. powerflat? 5x6 1 2 3 4 double island order code v ds r ds(on) max i d STL8DN6LF3 60 v 30 m 7.8 a table 1. device summary order code marking packages (1) packaging STL8DN6LF3 8dn6lf3 powerflat? 5x6 double island tape and reel 1. for wettable flank option, please contact st sale offices www.st.com
contents STL8DN6LF3 2/18 docid022261 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid022261 rev 5 3/18 STL8DN6LF3 electrical ratings 18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d (1),(2) 1. specified by design. not subject to production test. 2. current is limited by bonding, with an r thjc = 2.3 c/w the chip is able to carry 30 a at 25 c. drain current (continuous) at t c = 25 c 20 a i d drain current (continuous) at t c = 100 c 20 a i d (4) drain current (continuous) at t pcb = 25 c 7.8 a i d (4) drain current (continuous) at t pcb =100 c 5.5 a i dm (3),(4) 3. pulse width limited by safe operating area 4. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec drain current (pulsed) 31.2 a p tot total dissipation at t c = 25c 65 w p tot (4) total dissipation at t pcb = 25c 4.3 w i av not-repetitive avalanche current 7.8 a e as (5) 5. starting t j = 25 c, i d = 8 a, v dd = 25 v, per channel, 100% tested. single pulse avalanche energy 190 mj t j operating junction temperature -55 to 175 c t stg storage temperature c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 2.3 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb 35 c/w
electrical characteristics STL8DN6LF3 4/18 docid022261 rev 5 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a60 v i dss zero gate voltage drain current (v gs = 0) v ds = 60 v 1 a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a1 2.5v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 4 a 22.5 30 m v gs = 5 v, i d = 4 a 30 44 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =25 v, f=1 mhz, v gs =0 -668 - pf c oss output capacitance - 144 - pf c rss reverse transfer capacitance -14 - pf q g total gate charge v dd =30 v, i d = 7.8 a v gs =10 v figure 15 -13 - nc q gs gate-source charge - 2.4 - nc q gd gate-drain charge - 3 - nc r g intrinsic gate resistance f=1 mhz open drain - 4 - table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =30 v, i d = 4 a, r g =4.7 , v gs =10 v figure 14 -9-ns t r rise time - 7.7 - ns t d(off) turn-off delay time - 32.5 - ns t f fall time - 5 - ns
docid022261 rev 5 5/18 STL8DN6LF3 electrical characteristics 18 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 7.8 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 31.2 a v sd (2) 2. pulsed: pulse duration= 300 s, duty cycle 1.5% forward on voltage i sd = 7.8 a, v gs =0 - 1.3 v t rr reverse recovery time i sd = 7.8 a, di/dt = 100 a/ s, v dd =48 v, tj=150 c -30 ns q rr reverse recovery charge - 35 nc i rrm reverse recovery current - 2.35 a
electrical characteristics STL8DN6LF3 6/18 docid022261 rev 5 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 1s 100ms 10ms tj=175c tpcb=25c single pulse am13006v1 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse =0.5 10 0 10 1 10 -3 pcb zth_am13007v1 figure 4. output characteristics figure 5. transfer characteristics i d 15 10 5 0 0 2 v ds (v) 4 (a) 1 3 20 25 3v 4v v gs =10v am13008v1 i d 15 10 5 0 0 2 v gs (v) 4 (a) 1 3 20 25 v ds =3v am13009v1 figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on-resistance v (br)dss -75 t j (c) (norm) -25 75 25 125 0.90 0.94 0.98 1.02 1.06 i d =1ma 1.10 am13010v1 r ds(on) 22.6 22.4 22.2 22 3 i d (a) (m ) 2 4 22.8 23 6 5 7 v gs =10v am13011v1
docid022261 rev 5 7/18 STL8DN6LF3 electrical characteristics 18 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations v gs 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd =30v i d =7.8a 10 12 14 am13012v1 c 1000 100 10 10 30 v ds (v) (pf) 20 40 ciss coss crss 50 0 am13013v1 figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs, temperature v gs(th) 1.0 0.8 0.6 0.4 -75 t j (c) (norm) -25 1.2 75 25 125 i d =250a am13014v1 r ds(on) 1.2 0.8 0.4 0 -75 t j (c) (norm) -25 75 25 125 1.6 2.0 i d =3a v gs =10v am13015v1 figure 12. source-drain diode forward characteristics v sd 2 4 i sd (a) (v) 3 7 5 6 0.4 0.5 0.6 0.7 0.8 0.9 t j =-55c t j =175c t j =25c am13016v1
test circuits STL8DN6LF3 8/18 docid022261 rev 5 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd figure 17. unclamped inductive waveform figure 18. switching time waveform am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid022261 rev 5 9/18 STL8DN6LF3 package mechanical data 18 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL8DN6LF3 10/18 docid022261 rev 5 figure 19. powerflat? 5x6 double island type r-b drawing bottom view 5 8 4 1 pin 1 identification side view top view pin 1 identification . 4 5 8 1 8256945_rev.g_type_r-b
docid022261 rev 5 11/18 STL8DN6LF3 package mechanical data 18 table 8. powerflat? 5x6 double island type r-b mechanical data ref. dimensions (mm) min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d 5.00 5.20 5.40 e 5.95 6.15 6.35 d2 1.68 1.88 e2 3.50 3.70 d3 1.68 1.88 e3 3.50 3.70 e4 0.55 0.75 e1.27 l 0.60 0.80 k 1.275 1.575
package mechanical data STL8DN6LF3 12/18 docid022261 rev 5 figure 20. powerflat 5x6 double island type wf drawing bottom view pin 1 identification side view top view pin 1 identification . 5 8 4 1 4 1 5 8 8256945_rev.g_type_r-wf
docid022261 rev 5 13/18 STL8DN6LF3 package mechanical data 18 table 9. powerflat 5x6 double island type wf mechanical data ref. dimensions (mm) min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d 5.00 5.20 5.40 e 6.20 6.40 6.60 d2 1.68 1.88 e2 3.50 3.70 d3 1.68 1.88 e3 3.50 3.70 e4 0.55 0.75 e1.27 l 0.70 0.90 l1 0.275 k 1.275 1.575
package mechanical data STL8DN6LF3 14/18 docid022261 rev 5 figure 21. powerflat? 5x6 double island type r drawing recommended footprint (dimensions are in mm) footprint_type_r
docid022261 rev 5 15/18 STL8DN6LF3 packaging mechanical data 18 5 packaging mechanical data figure 22. powerflat? 5x6 double island type r-b tape (a) figure 23. powerflat 5x6 double island type wf tape (a) a. all dimensions are in millimeters. measured from centerline of sprocket hole to centerline of pocket. cumulative tolerance of 10 sprocket holes is 0.20 . measured from centerline of sprocket hole to centerline of pocket. (i) (ii) (iii) 2 2.00.1 (i) bo (5.300.1) ko (1.200.1) 0.05) ?1.5 min. ?1.550.05 p ao(6.300.1) f(5.500.1)(iii) w(12.000.3) 1.750.1 4.00.1 (ii) p 0 y y section y-y c l p1(8.000.1) do d1 e 1 (0.30 t ref.r0.50 ref 0.20 base and bulk quantity 3000 pcs 8234350_tape_rev_c 1.50 0.0 + 0.1 do 4.0 0.1(ii) po 1.75 0.1 e1 1.50 min d1 2.0 0.05(i) p2 y y r0.30 max 0.30 0.05 t section y-y measured from centreline of sprocket hole to centreline of pocket. cumulative tolerance of 10 sprocket holes is 0.20 . measured from centreline of sprocket hole to centreline of pocket. (i) (ii) (iii) base and bulk quantity 3000 pcs p1(8.000.1) ao(6.700.1) f(5.500.0.05)(iii) w(12.000.1) bo (5.350.05) ko (1.200.1) 8234350_tapewf_rev_c
packaging mechanical data STL8DN6LF3 16/18 docid022261 rev 5 figure 24. powerflat? 5x6 package orientation in carrier tape figure 25. powerflat? 5x6 reel pin 1 identification 2.20 ?21.2 13.00 core detail 2.50 1.90 r0.60 77 128 ?a r1.10 2.50 4.00 r25.00 part no. w1 w2 18.4 (max) w3 06 ps esd logo attention observe precautions for handling electrostatic sensitive devices 11.9/15.4 12.4 (+2/-0) a 330 (+0/-4.0) all dimensions are in millimeters ?n 178(2.0) 8234350_reel_rev_c
docid022261 rev 5 17/18 STL8DN6LF3 revision history 18 6 revision history table 10. document revision history date revision changes 11-oct-2011 1 first release. 19-jun-2012 2 added section 2.1: electrical characteristics (curves) . updated section 4: package mechanical data and title on the cover page. 26-jun-2012 3 document status promoted from preliminary to production data. 24-oct-2013 4 ? updated title and features in cover page ? modified: v gs(th) value in table 4 ? updated: section 4: package mechanical data and section 5: packaging mechanical data ? minor text changes 20-feb-2014 5 ? added: features in cover page ? added: note 1 in table 1 ? added: table 20 and table 9 ? added: figure 23 ? minor text changes
STL8DN6LF3 18/18 docid022261 rev 5 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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