HN1B26FS 2007-11-01 1 toshiba transistor silicon npn epitaxial type (pct process) HN1B26FS general-purpose amplifier applications q1 high voltage and high current : v ceo = 50 v, i c = 100 ma (max) ? excellent h fe linearity : h fe (i c = 0.1 ma)/h fe (i c = 2 ma) = 0.95 (typ.) ? high h fe : h fe = 120~400 q2 high voltage and high current : v ceo = ? 50 v, i c = ? 100 ma (max) ? excellent h fe linearity : h fe (i c = ? 0.1 ma)/h fe (i c = ? 2 ma) = ? 0.95 (typ.) ? high h fe : h fe = 120~400 q1 absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 100 ma base current i b 30 ma q2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo ?50 v collector-emitter voltage v ceo ?50 v emitter-base voltage v ebo ?5 v collector current i c ?100 ma base current i b ?30 ma q1, q2 common absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector power dissipation p c 50* mw junction temperature t j 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: total rating unit: mm jedec D jeita D toshiba 2-1f1d weight: 0.0008 g (typ.) fs6 0.150.05 0.10.05 6 0.80.05 1.00.05 0.70.05 1 2 0.10.05 0.35 0.35 3 1.00.05 0.10.05 5 4 0.48 +0.02 -0.04 1.emitter1 2.base1 3.collector2 4.emitter2 5.base2 6.collector1 (e1) (b1) (c2) (e2) (b2) (c1)
HN1B26FS 2007-11-01 2 q1 electrical characte ristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cutoff current i cbo v cb = 60 v, i e = 0 ? ? 0.1 a emitter cutoff current i ebo v eb = 5 v, i c = 0 ? ? 0.1 a dc current gain h fe (note) v ce = 6 v, i c = 2 ma 120 ? 400 ? collector-emitter saturation voltage v ce (sat) i c = 100 ma, i b = 10 ma ? 0.1 0.25 v transition frequency f t v ce = 10 v, i c = 1 ma 60 ? ? mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz ? 0.95 ? pf q2 electrical characte ristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cutoff current i cbo v cb = ?50 v, i e = 0 ? ? ?0.1 a emitter cutoff current i ebo v eb = ? 5 v, i c = 0 ? ? ?0.1 a dc current gain h fe (note) v ce = ?6 v, i c = ?2 ma 120 ? 400 ? collector-emitter saturation voltage v ce (sat) i c = ?100 ma, i b = ?10 ma ? ?0.18 ? 0.3 v transition frequency f t v ce = ?10 v, i c = ?1 ma 80 ? ? mhz collector output capacitance c ob v cb = ?10 v, i e = 0, f = 1 mhz ? 1.6 ? pf note: h fe classification y (f): 120~240, gr (h): 200~400 ( ) marking symbol marking equivalent circuit (top view) type name tf hfe rank 6 54 123 q1 q2
HN1B26FS 2007-11-01 3 q1 ic - vce 0 20 40 60 80 100 120 01234567 common emitter ta = 25c ib=0.1ma 0.2 0.3 0.5 2.0 1.5 1.0 0.7 ib - vbe 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 base current ib ( a) common emitter vce = 6v 25 -25 vce(sat) - ic 0.01 0.1 1 0.1 1 10 100 common emitter ic/ib = 10 25 -25 vbe(sat) - ic 0.1 1 10 0.1 1 10 100 common emitter ic/ ib = 10 25 -25 hfe - ic 10 100 1000 0.1 1 10 100 common emitter vce = 6v vce = 1v 25 -25 collector current ic ( ma ) collector-emitter saturation v o lta g e v c e (sa t ) ( v ) base-emitter saturation v o lta g e vbe (sa t ) ( v ) collector current ic (ma) collector current ic (ma) collector current ic (ma) base-emitter voltage vbe (v) collector-emitter voltage vce (v) dc current gain hfe ta = 100c ta = 100c ta = 100c ta = 100c
HN1B26FS 2007-11-01 4 q2 ic - vce -0 -20 -40 -60 -80 -100 -120 -0 -1 -2 -3 -4 -5 -6 -7 0 0 ib = -0.1ma -0.2 -0.3 -0.5 -0.7 -1.0 -1.5 -2.0 hfe - ic 10 100 1000 -0.1 -1 -10 -100 -25 25 ta = 100c vce(sat) - ic -0.01 -0.1 -1 -0.1 -1 -10 -100 ta = 100c -25 25 vbe(sat) - ic -0.1 -1 -10 -0.1 -1 -10 -100 ib - vbe -0.1 -1 -10 -100 -1000 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 base current ib (ua) ta = 100c -25 25 0 collector current ic ( ma ) dc current gain hfe collector-emitter saturation voltage vce(sat) (v) base-emitter saturation voltage vbe ( sat ) ( v ) base-emitter voltage vbe (v) collector current ic (ma) collector current ic (ma) collector current ic (ma) collector-emitter voltage vce (v) common emitter vce = 6v vce = 1v common emitter ta = 25c common emitter ic/ib = 10 common emitter ic/ib = 10 common emitter vce = 6v ta = 100c 25 -25
HN1B26FS 2007-11-01 5 q1, q2 common pc*- ta 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 ambient temperature ta (c) collector power dissipation pc (mv) *: total rating
HN1B26FS 2007-11-01 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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