? semiconductor components industries, llc, 2008 december, 2008 ? rev. 1 1 publication order number: NTGD4167C/d NTGD4167C power mosfet complementary, 30 v, +2.9/ ? 2.2 a, tsop ? 6 dual features ? complementary n ? channel and p ? channel mosfet ? small size (3 x 3 mm) dual tsop ? 6 package ? leading edge trench technology for low on resistance ? reduced gate charge to improve switching response ? independently connected devices to provide design flexibility ? this is a pb ? free device applications ? dc ? dc conversion circuits ? load/power switching with level shift maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage (n ? ch & p ? ch) v gs 12 v n ? channel continuous drain current (note 1) steady state t a = 25 c t a = 85 c i d 2.6 1.9 a t 5 s t a = 25 c 2.9 p ? channel continuous drain current (note 1) steady state t a = 25 c t a = 85 c i d ? 1.9 ? 1.4 a t 5 s t a = 25 c ? 2.2 power dissipation (note 1) steady state t a = 25 c p d 0.9 w t 5 s 1.1 pulsed drain current n ? ch t p = 10 s i dm 8.6 a p ? ch ? 6.3 operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s 0.9 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol value unit junction ? to ? ambient ? steady state (note 1) r ja 140 c/w junction ? to ? ambient ? t 5 s (note 1) r ja 110 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). 1 2 3 6 5 4 g1 s2 g2 d1 s1 d2 http://onsemi.com g2 s2 p ? channel mosfet d2 ta = specific device code m = date code = pb ? free package tsop ? 6 case 318g style 13 marking diagram (top view) see detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. ordering information pin connection n ? ch 30 v 125 m @ 2.5 v 90 m @ 4.5 v r ds(on) max 2.6 a i d max (note 1) v (br)dss 170 m @ ? 4.5 v 300 m @ ? 2.5 v g1 s1 n ? channel mosfet d1 p ? ch ? 30 v ? 1.9 a ta m 1 1 2.2 a ? 1.0 a (note: microdot may be in either location)
NTGD4167C http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol n/p test conditions min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss n v gs = 0 v i d = 250 a 30 v p i d = ? 250 a ? 30 drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j n 21.4 mv/ c p 22.2 zero gate voltage drain current i dss n v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a p v gs = 0 v, v ds = ? 24 v ? 1.0 n v gs = 0 v, v ds = 24 v t j = 85 c 10 p v gs = 0 v, v ds = ? 24 v ? 10 gate ? to ? source leakage current i gss n v ds = 0 v, v gs = 12 v 100 na p v ds = 0 v, v gs = 12 v 100 on characteristics (note 2) gate threshold voltage v gs(th) n v gs = v ds i d = 250 a 0.5 0.9 1.5 v p i d = ? 250 a ? 0.5 ? 1.1 ? 1.5 drain ? to ? source on resistance r ds(on) n v gs = 4.5 v , i d = 2.6 a 52 90 m v gs = 2.5 v , i d = 2.2 a 67 125 p v gs = ? 4.5 v , i d = ? 1.9 a 130 170 v gs = ? 2.5 v, i d = ? 1.0 a 202 300 forward transconductance g fs n v ds = 15 v, i d = 2.6 a 2.6 s p v ds = ? 15 v , i d = ? 1.9 a 2.6 charges and capacitances input capacitance c iss n f = 1 mhz, v gs = 0 v v ds = 15 v 295 pf output capacitance c oss 48 reverse transfer capacitance c rss 27 input capacitance c iss p v ds = ? 15 v 419 output capacitance c oss 51 reverse transfer capacitance c rss 26 total gate charge q g(tot) n v gs = 4.5 v, v ds = 15 v, i d = 2.0 a 3.7 5.5 nc threshold gate charge q g(th) 0.6 gate ? to ? source gate charge q gs 0.9 gate ? to ? drain ?miller? charge q gd 0.8 total gate charge q g(tot) p v gs = ? 4.5 v, v ds = ? 15 v, i d = ? 2.0 a 3.9 6.0 threshold gate charge q g(th) 0.6 gate ? to ? source gate charge q gs 1.0 gate ? to ? drain ?miller? charge q gd 1.0 switching characteristics (note 3) turn ? on delay time t d(on) n v gs = 4.5 v, v dd = 15 v, i d = 1.0 a, r g = 6.0 7.0 ns rise time t r 4.0 turn ? off delay time t d(off) 14 fall time t f 2.0 turn ? on delay time t d(on) p v gs = ? 4.5 v, v dd = ? 15 v, i d = ? 1.0 a, r g = 6.0 8.0 rise time t r 8.0 turn ? off delay time t d(off) 22 fall time t f 8.0 2. pulse test: pulse width 300 s, duty cycle 2%.
NTGD4167C http://onsemi.com 3 3. switching characteristics are independent of operating junction temperatures. electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol n/p test conditions min typ max unit drain ? source diode characteristics forward diode voltage v sd n v gs = 0 v, t j = 25 c i s = 0.9 a 0.7 1.2 v p i s = ? 0.9 a ? 0.8 ? 1.2 reverse recovery time t rr n v gs = 0 v, di s / dt = 100 a/ s, i s = 0.9 a 8.0 ns charge time t a 5.0 discharge time t b 3.0 reverse recovery charge q rr 3.0 nc reverse recovery time t rr p v gs = 0 v, di s / dt = 100 a/ s, i s = ? 0.9 a 12 ns charge time t a 10 discharge time t b 2.0 reverse recovery charge q rr 7.0 nc
NTGD4167C http://onsemi.com 4 n ? channel typical characteristics 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d , drain current (a) v ds , drain ? to ? source voltage (v) figure 1. on ? region characteristics t j = 25 c v gs = 4.5 v 3.5 v 2.5 v 2.0 v 1.5 v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0.75 1 1.25 1.5 1.75 2 2.25 2.5 v ds = 5 v 125 c ? 55 c 25 c i d , drain current (a) v gs , gate ? to ? source voltage (v) figure 2. transfer characteristics 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r ds(on) , drain ? to ? source resistance ( ) t j = 25 c i d = 2.6 a v gs , gate voltage (v) figure 3. on ? region vs. gate ? to ? source voltage 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9. 0 t j = 25 c v gs = 4.5 v v gs = 2.5 v i d , drain current (a) figure 4. on ? resistance vs. drain current and temperature r ds(on) , drain ? to ? source resistance ( ) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 ? 50 ? 25 0 25 50 75 100 125 150 r ds(on) , drain ? to ? source resistance t j , junction temperature ( c) figure 5. on ? resistance variation with temperature i d = 2.6 a v gs = 4.5 v 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v ds , drain ? to ? source voltage (v) c, capacitance (pf) c iss c oss c rss t j = 25 c v gs = 0 v f = 1 mhz figure 6. capacitance variation
NTGD4167C http://onsemi.com 5 0 1 2 3 4 5 01234 0 2 4 6 8 10 12 14 16 q t v gs , gate ? to ? source voltage (v) q g , total gate charge (nc) i d = 2.0 a t j = 25 c v ds = 15 v figure 7. gate ? to ? source and drain ? to ? source voltage versus total charge v ds , drain ? to ? source voltage (v) q gs q gd 0.1 1.0 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source ? to ? drain voltage (v) t j = 150 c i s , source current (a) figure 8. diode forward voltage versus current t j = 25 c 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 ? 50 ? 25 0 25 50 75 100 125 150 v gs(th) (v) t j , junction temperature ( c) figure 9. threshold voltage v gs i d = 250 a 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) single pulse time (s) figure 10. single pulse maximum power dissipation 0.01 0.1 1 10 100 0.1 1 10 100 100 s 1 ms 10 ms dc r ds(on) limit thermal limit package limit v ds , drain ? to ? source voltage (v) i d , drain current (a) v gs = 12 v single pulse t a = 25 c figure 11. maximum rated forward biased safe operating area v ds
NTGD4167C http://onsemi.com 6 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 duty cycle = 0.5 t, time (s) r(t), effective transient thermal response normalized figure 12. fet thermal response 0.2 0.1 0.05 0.02 0.01 single pulse
NTGD4167C http://onsemi.com 7 p ? channel typical characteristics 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ? i d , drain current (a) ? v ds , drain ? to ? source voltage (v) figure 13. on ? region characteristics v gs = ? 5.0 v to ? 3.5 v ? 2.5 v ? 3.0 v ? 2.0 v ? 1.5 v ? i d , drain current (a) ? v gs , gate ? to ? source voltage (v) figure 14. transfer characteristics 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 v ds = ? 5 v 125 c ? 55 c 25 c 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r ds(on) , drain ? to ? source resistance ( ) t j = 25 c i d = ? 1.9 a ? v gs , gate voltage (v) figure 15. on ? region vs. gate ? to ? source voltage 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 1.0 2.0 3.0 4.0 5.0 6.0 7. 0 t j = 25 c v gs = ? 4.5 v v gs = ? 2.5 v ? i d , drain current (a) figure 16. on ? resistance vs. drain current and temperature r ds(on) , drain ? to ? source resistance ( ) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 ? 50 ? 25 0 25 50 75 100 125 150 r ds(on) , drain ? to ? source resistance t j , junction temperature ( c) figure 17. on ? resistance variation with temperature i d = ? 1.9 a v gs = ? 4.5 v 0 50 100 150 200 250 300 350 400 450 500 550 0 5 10 15 20 25 30 ? v ds , drain ? to ? source voltage (v) c, capacitance (pf) c iss c oss c rss t j = 25 c v gs = 0 v f = 1 mhz figure 18. capacitance variation
NTGD4167C http://onsemi.com 8 0 1 2 3 4 5 01234 0 2 4 6 8 10 12 14 16 ? v gs , gate ? to ? source voltage (v) q g , total gate charge (nc) figure 19. gate ? to ? source and drain ? to ? source voltage versus total charge ? v ds , drain ? to ? source voltage (v) q t i d = ? 2.0 a t j = 25 c v ds = ? 15 v q gs q gd ? v gs ? v ds 0.1 1.0 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 ? v sd , source ? to ? drain voltage (v) t j = 150 c ? i s , source current (a) figure 20. diode forward voltage versus current t j = 25 c 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 ? 50 ? 25 0 25 50 75 100 125 150 ? v gs(th) (v) t j , junction temperature ( c) figure 21. threshold voltage i d = ? 250 a 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) single pulse time (s) figure 22. single pulse maximum power dissipation 0.01 0.1 1 10 100 0.1 1 10 100 100 s 1 ms 10 ms dc r ds(on) limit thermal limit package limit ? v ds , drain ? to ? source voltage (v) ? i d , drain current (a) v gs = ? 12 v single pulse t a = 25 c figure 23. maximum rated forward biased safe operating area
NTGD4167C http://onsemi.com 9 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 duty cycle = 0.5 t, time (s) r(t), effective transient thermal response normalized figure 24. fet thermal response 0.2 0.1 0.05 0.02 0.01 single pulse ordering information device package shipping ? NTGD4167Ct1g tsop6 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTGD4167C http://onsemi.com 10 package dimensions tsop ? 6 case 318g ? 02 issue t 23 4 5 6 d 1 e b e a1 a 0.05 (0.002) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. c l 0.95 0.037 1.9 0.075 0.95 0.037 mm inches scale 10:1 1.0 0.039 2.4 0.094 0.7 0.028 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.90 1.00 1.10 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.25 0.38 0.50 0.010 c 0.10 0.18 0.26 0.004 d 2.90 3.00 3.10 0.114 e 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 l 0.20 0.40 0.60 0.008 0.039 0.043 0.002 0.004 0.014 0.020 0.007 0.010 0.118 0.122 0.059 0.067 0.037 0.041 0.016 0.024 nom max 2.50 2.75 3.00 0.099 0.108 0.118 h e ? ? 0 1 0 0 1 0 style 13: pin 1. gate 1 2. source 2 3. gate 2 4. drain 2 5. source 1 6. drain 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. NTGD4167C/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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