PMV65XP 20 v, single p-channel trench mosfet 12 february 2013 product data sheet 1. general description p-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. 2. features and benefits ? low threshold voltage ? low on-state resistance ? trench mosfet technology 3. applications ? low power dc-to-dc converters ? load switching ? battery management ? battery powered portable equipment 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage - - -20 v v gs gate-source voltage t j = 25 c -12 - 12 v i d drain current v gs = -4.5 v; t sp = 25 c - - -4.3 a static characteristics r dson drain-source on-state resistance v gs = -4.5 v; i d = -2.8 a; t j = 25 c - 58 74 m product specification sales@twtysemi.com 1 of 4 http://www.twtysemi.com
PMV65XP 20 v, single p-channel trench mosfet 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate 2 s source 3 d drain 1 2 3 to-236ab (sot23) s d g 017aaa257 6. ordering information table 3. ordering information package type number name description version PMV65XP to-236ab plastic surface-mounted package; 3 leads sot23 7. marking table 4. marking codes type number marking code [1] PMV65XP %m9 [1] % = placeholder for manufacturing site code 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - -20 v v gs gate-source voltage t j = 25 c -12 12 v v gs = -4.5 v; t sp = 25 c - -4.3 a v gs = -4.5 v; t amb = 25 c [1] - -2.8 a i d drain current v gs = -4.5 v; t amb = 100 c [1] - -1.8 a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - -16 a [2] - 480 mw t amb = 25 c [1] - 833 mw p tot total power dissipation t sp = 25 c - 4165 mw product specification sales@twtysemi.com 2 of 4 http://www.twtysemi.com
PMV65XP 20 v, single p-channel trench mosfet 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit [1] - 230 260 k/w r th(j-a) thermal resistance from junction to ambient in free air [2] - 125 150 k/w r th(j-sp) thermal resistance from junction to solder point - 25 30 k/w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = -250 a; v gs = 0 v; t j = 25 c -20 - - v v gsth gate-source threshold voltage i d = -250 a; v ds = v gs ; t j = 25 c -0.47 -0.65 -0.9 v v ds = -20 v; v gs = 0 v; t j = 25 c - - -1 a i dss drain leakage current v ds = -20 v; v gs = 0 v; t j = 150 c - - -100 a product specification sales@twtysemi.com 3 of 4 http://www.twtysemi.com
PMV65XP 20 v, single p-channel trench mosfet symbol parameter conditions min typ max unit v gs = -12 v; v ds = 0 v; t j = 25 c - - -100 na i gss gate leakage current v gs = 12 v; v ds = 0 v; t j = 25 c - - 100 na v gs = -4.5 v; i d = -2.8 a; t j = 25 c - 58 74 m v gs = -4.5 v; i d = -2.8 a; t j = 150 c - 82 105 m v gs = -2.5 v; i d = -2.3 a; t j = 25 c - 67 92 m r dson drain-source on-state resistance v gs = -1.8 v; i d = -1 a; t j = 25 c - 87 135 m g fs forward transconductance v ds = -10 v; i d = -2.8 a; t j = 25 c - 15 - s dynamic characteristics q g(tot) total gate charge - 7.7 - nc q gs gate-source charge - 1 - nc q gd gate-drain charge v ds = -6 v; i d = -2.8 a; v gs = -4.5 v; t j = 25 c - 1.65 - nc c iss input capacitance - 744 - pf c oss output capacitance - 65 - pf c rss reverse transfer capacitance v ds = -20 v; f = 1 mhz; v gs = 0 v; t j = 25 c - 53 - pf t d(on) turn-on delay time - 7 - ns t r rise time - 18 - ns t d(off) turn-off delay time - 135 - ns t f fall time v ds = -6 v; v gs = -4.5 v; r g(ext) = 6 ; t j = 25 c; i d = -1 a - 68 - ns source-drain diode v sd source-drain voltage i s = -0.9 a; v gs = 0 v; t j = 25 c - -0.8 -1.2 v product specification sales@twtysemi.com 4 of 4 http://www.twtysemi.com
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