?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com FDA59N30 rev. c0 FDA59N30 n-channel unifet tm mosfet march 2013 FDA59N30 n-channel unifet tm mosfet 300 v, 59 a, 56 m ? features ?r ds(on) = 56 m? (max.) @ v gs = 10 v, i d = 29.5 a ? low gate charge (typ. 77 nc) ?low c rss (typ. 80 pf) ? 100% avalanche tested applications ?pdp tv ? uninterruptible power supply ? ac-dc power supply description unifet tm mosfet is fairchild semiconductor ? ?s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. this device fami ly is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? s d g g d s to-3pn absolute maximum ratings symbol parameter FDA59N30 unit v dss drain-source voltage 300 v i d drain current - continuous (t c = 25 ? c) - continuous (t c = 100 ? c) 59 35 a a i dm drain current - pulsed (note 1) 236 a v gss gate-source voltage ?30 v e as single pulsed avalanche energy (note 2) 1734 mj i ar avalanche current (note 1) 59 a e ar repetitive avalanche energy (note 1) 50 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 ? c) - derate above 25 ? c 500 4 w w/ ? c t j, t stg operating and storage temperature range -55 to +150 ? c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 ? c thermal characteristics symbol parameter FDA59N30 unit r ? jc thermal resistance, junction-to-case, max. 0.25 ? c/ w r ? ja thermal resistance, junction-to-ambient, max. 40
FDA59N30 n-channel unifet tm mosfet ?2005 fairchild semiconductor corporation 2 www.fairchildsemi.com FDA59N30 rev. c0 package marking and ordering information device marking device package reel size tape width quantity FDA59N30 FDA59N30 to-3pn - - 30 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min. typ. max unit off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 ? a 300 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 ? c -- 0.3 -- v/ ? c i dss zero gate voltage drain current v ds = 300v, v gs = 0v v ds = 240v, t c = 125 ? c -- -- -- -- 1 10 ? a ? a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 ? a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 29.5a -- 0.047 0.056 ? g fs forward transconductance v ds = 40v, i d = 29.5a -- 52 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 3590 4670 pf c oss output capacitance -- 710 920 pf c rss reverse transfer capacitance -- 80 120 pf switching characteristics t d(on) turn-on delay time v dd = 150v, i d = 59a r g = 25 ? (note 4) -- 140 290 ns t r turn-on rise time -- 575 1160 ns t d(off) turn-off delay time -- 120 250 ns t f turn-off fall time -- 200 410 ns q g total gate charge v ds = 240v, i d = 59a v gs = 10v (note 4) -- 77 100 nc q gs gate-source charge -- 22 -- nc q gd gate-drain charge -- 40 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 59 a i sm maximum pulsed drain-source diode forward current -- -- 236 a v sd drain-source diode forward voltage v gs = 0v, i s = 59a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 59a di f /dt =100a/ ? s -- 246 -- ns q rr reverse recovery charge -- 6.9 -- ? c notes: 1. repetitive rating: pulse width limit e d by maximum junction temperature 2. l = 0.83mh, i as = 59a, v dd = 50v, r g = 25 ? , starting t j = 25 ?c 3. i sd ? 59a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 25 ?c 4. essentially independent of operating temperature typical characteristics
FDA59N30 n-channel unifet tm mosfet ?2005 fairchild semiconductor corporation 3 www.fairchildsemi.com FDA59N30 rev. c0 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v ?
FDA59N30 n-channel unifet tm mosfet ?2005 fairchild semiconductor corporation 4 www.fairchildsemi.com FDA59N30 rev. c0 typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
FDA59N30 n-channel unifet tm mosfet ?2005 fairchild semiconductor corporation 5 www.fairchildsemi.com FDA59N30 rev. c0 charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k
FDA59N30 n-channel unifet tm mosfet ?2005 fairchild semiconductor corporation 6 www.fairchildsemi.com FDA59N30 rev. c0 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDA59N30 n-channel unifet tm mosfet ?2005 fairchild semiconductor corporation 7 www.fairchildsemi.com FDA59N30 rev. c0 mechanical dimensions dimensions in millimeters to-3pn
FDA59N30 n-channel unifet tm mosfet ?2005 fairchild semiconductor corporation 8 www.fairchildsemi.com FDA59N30 rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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