2db1132p/q/r document number: ds31142 rev: 6 - 2 1 of 6 www.diodes.com december 2013 ? diodes incorporated 2db1132p/q/r 32v pnp power switching transistor in sot-89 features ? bv ceo > -32v ? i c = -1a high continuous collector current ? complementary npn type: 2dd1664 ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot89 ? case material: molded plasti c. ?green? molding compound. ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte ti n plated leads, solderable per mil-std-202, method 208 ? weight: 0.055 grams (approximate) ordering information (note 4) product marking reel size (inches) tape width (mm) quantity per reel 2DB1132P-13 p13p 13 12 2,500 2db1132q-13 p13q 13 12 2,500 2db1132r-13 p13r 13 12 2,500 2db1132r-13r p13r 13 12 4,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen and antimony free,"green" and lead-free. 3. halogen and antimony free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html marking information top view device symbol pin out top view sot89 p13x yww (top view) p13x = product type marking code: where p13p = 2db1132p p13q = 2db1132q p13r = 2db1132r yww = date code marking y = last digit of year ex: 7 = 2007 ww = week code 01 - 52 c e b c e c b
2db1132p/q/r document number: ds31142 rev: 6 - 2 2 of 6 www.diodes.com december 2013 ? diodes incorporated 2db1132p/q/r absolute maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -32 v emitter-base voltage v ebo -5 v continuous collector current i c -1 a peak pulse current i cm -2 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 1 w (note 6) 1.5 (note 7) 2.0 thermal resistance, junction to ambient air (note 5) r ja 125 c/w ? (note 6) 83 (note 7) 60 thermal resistance, junction to lead (note 8) r jl 22 c/w ? operating and storage temperature range t j, t stg -55 to +150 c esd ratings (note 9) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4,000 v 3a electrostatic discharge - machine model esd mm 400 v c notes: 5. for a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm fr4 pcb ; device is measured under still air conditions whilst operating in a steady-state. 6. same as note (5), except the device is mounted on 25mm x 25mm 1oz copper. 7. same as note (5), except the device is mounted on 50mm x 50mm 1oz copper. 8. thermal resistance from junction to solder-point (on the exposed collector pad). 9. refer to jedec specification jesd22-a114 and jesd22-a115.
2db1132p/q/r document number: ds31142 rev: 6 - 2 3 of 6 www.diodes.com december 2013 ? diodes incorporated 2db1132p/q/r thermal characteristics and derating information 0 255075100125150 0.0 0.2 0.4 0.6 0.8 1.0 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse. t amb =25c pulse power dissipation pulse width (s) max power dissipation (w) 0 500 1000 1500 2000 2500 0 1 2 3 0 500 1000 1500 2000 2500 40.0 60.0 80.0 100.0 120.0 140.0 2oz copper 1oz copper t amb =25c copper area (sqmm) maximum power (w) 2oz copper 1oz copper t amb =25c copper area (sqmm) thermal resistance (c/w)
2db1132p/q/r document number: ds31142 rev: 6 - 2 4 of 6 www.diodes.com december 2013 ? diodes incorporated 2db1132p/q/r electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -40 ? ? v i c = -50a collector-emitter breakdown voltage (note 10) bv ceo -32 ? ? v i c = -1ma emitter-base breakdown voltage bv ebo -5 ? ? v i e = -50a collector cut-off current i cbo ? ? -0.5 a v cb =-20v emitter cut-off current i ebo ? ? -0.5 a v eb = -4v static forward current transfer ratio (note 10) 2db1132p h fe 82 ? 180 ? i c = -100ma, v ce = -3v 2db1132q 120 270 2db1132r 180 390 collector-emitter saturation voltage (note 10) v ce ( sat ) ? -125 -500 mv i c =-500ma, i b = -50ma transition frequency f t ? 190 ? mhz i e = 50ma, v ce = -5v,f=30mhz output capacitance c ob ? 12 30 pf i e = 0a, v cb = -10v,f=1mhz notes: 10. measured under pulsed conditions. pulse width 300 s. duty cycle 2% typical electrical characteristics (@t a = +25c, unless otherwise specified.) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.001 0.01 0.1 1 10 100 t = -55c a t = 25c a t = 85c a t = 150c a v = -3v ce 200 300 400 500 t = -55c a t = 25c a t = 85c a t = 150c a i/i = 10 cb t = -55c a t = 25c a t = 85c a t = 150c a v = -3v ce
2db1132p/q/r document number: ds31142 rev: 6 - 2 5 of 6 www.diodes.com december 2013 ? diodes incorporated 2db1132p/q/r package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. t = -55c a t = 25c a t = 85c a t = 150c a i/i = 10 cb 0 20 40 30 10 -i , emitter current e fig. 8 typical gain-bandwidth product vs. emitter current 50 100 150 200 250 v = -5v f = 30mhz ce sot89 dim min max a 1.40 1.60 b 0.44 0.62 b1 0.35 0.54 c 0.35 0.44 d 4.40 4.60 d1 1.62 1.83 e 2.29 2.60 e 1.50 typ h 3.94 4.25 h1 2.63 2.93 l 0.89 1.20 all dimensions in mm e h d1 b1 b e c l a d 8 (4x) h 1 r 0 . 2 0 0
2db1132p/q/r document number: ds31142 rev: 6 - 2 6 of 6 www.diodes.com december 2013 ? diodes incorporated 2db1132p/q/r suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com dimensions value (in mm) x 0.900 x1 1.733 x2 0.416 y 1.300 y1 4.600 y2 1.475 y3 0.950 y4 1.125 c 1.500 y1 x1 y2 y c x (3x) y3 y4 x2 (2x)
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