1 d a t a s h e e t : c 3 d 2 5 1 7 0 h r e v . - C3D25170H Csilicon carbide schottky diode z -r ec ? r ectifier features ? 1700-volt schottky rectifer ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? halogen-free; rohs complaint benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway package maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1700 v v rsm surge peak reverse voltage 1700 v v dc dc blocking voltage 1700 v i f continuous forward current 26.3 a t c <135?c i frm repetitive peak forward surge current 99 57 a t c =25?c, t p =10 ms, half sine wave, d=1 t c =110?c, t p =10 ms, half sine wave, d=1 i fsm non-repetitive peak forward surge current 117 88 a t c =25?c, t p =10ms, half sine wave, d=1 t c =110?c, t p =10 ms, half sine wave, d=1 p tot power dissipation 377 163 w t c =25?c t c =110?c t c maximum case temperature 135 ?c t j operating junction range -55 to +175 ?c t stg storage temperature range -55 to +135 ?c to-247 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw part number package marking C3D25170H to-247-2 c3d25170 v rrm = 1700 v i f; t c <135?c = 26.3 a q c = 230 nc pin 1 pin 2 case subject to change without notice. www.cree.com/power free datasheet http://www.ndatasheet.com
2 C3D25170H rev. - 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 7 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.8 3.2 2.5 4 v i f = 25 a t j =25c i f = 25 a t j =175c i r reverse current 20 100 100 400 a v r = 1700 v t j =25c v r = 1700 v t j =175c q c total capacitive charge 230 nc v r = 1700 v, i f = 25 a d i /d t = 200 a/s t j = 25c c total capacitance 2079 187.5 97 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc thermal resistance from junction to case 0.4 c/w typical performance figure 1. forward characteristics 0 1 2 3 4 5 6 7 8 0 200 400 600 800 1000 1200 1400 1600 1800 2000 figure 2. reverse characteristics i f (a) v f (v) i r (a) v r (v) t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c free datasheet http://www.ndatasheet.com
3 C3D25170H rev. - typical performance 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 i f(peak) (a) t c ?c 0 50 100 150 200 250 300 350 400 25 50 75 100 125 150 175 t c ?c p tot (w) figure 3. current derating 0 500 1000 1500 2000 2500 0.1 1 10 100 1000 figure 4. power derating 0 20 40 60 80 100 120 140 160 180 0 200 400 600 800 1000 figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage qrr (nc) v r (v) c (pf) v r (v) 10% duty 30% duty 50% duty 70% duty dc free datasheet http://www.ndatasheet.com
4 C3D25170H rev. - typical performance 0.001 0.01 0.1 1 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 10 figure 7. transient thermal impedance thermal resistance (?c/w) t (sec) diode model vf t = v t +if*r t v t = 0.99+(t j * -1.50*10 -3 ) r t = 0.03+(t j * 0.5*10 -3 ) note: tj = diode junction temperature in degrees celsius v t r t diode model csd04060 vf t = v t + if*r t v t= 0.965 + (t j * - 1.3*10 - 3 ) r t= 0.096 + (t j * 1.0 6 *10 - 3 ) free datasheet http://www.ndatasheet.com
5 5 C3D25170H rev. - this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec is a trademark of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic pollutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electronic equipment (r ohs), as amended through april 21, 2006. pos inches millimeters min max min max a 0.185 0.209 4.70 5.31 a1 0.087 0.102 2.21 2.59 b 0.040 0.055 1.02 1.40 b1 0.065 0.088 1.65 2.23 c 0.016 0.031 0.41 0.79 d 0.819 0.845 20.80 21.46 e 0.61 0.640 15.49 16.26 e 0.215 0.215 5.46 5.46 l 0.78 0.80 19.81 20.32 l1 0.164 0.176 4.17 4.47 ? p 0.140 0.144 3.56 3.66 q 0.212 0.244 5.38 6.20 ? r 0.135 0.157 3.43 3.99 ? s 0.278 0.288 7.06 7.32 v 0.652 0.662 16.56 16.81 w 0.000 0.006 0.00 0.15 pin 1 pin 2 case e free datasheet http://www.ndatasheet.com
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