wsb5507 w middle power schottky barrier diode features ? 0.5 a average rectified forward current ? low forward voltage , l ow leakage current ? small package sod - 323 applications ? switching circuit ? middle current rectification absolute maximum ratings electronics characteristics (t a =25 o c) order informations note 1 : pulse width= 8.3ms , single pulse ; note 2 : single pulse test tp=3 8 0us; note 3 : device mounted on an fr4 pcb note 4 : * = month code (a~z) ; 7 = device code ; sod - 323 circuit marking parameter symbol value unit r everse voltage (repetitive peak) v r r m 4 0 v r everse voltage (dc) v r 40 v average rectified forward current i o 0.5 a peak forward surge current ( 1 ) i fsm 7 a junction temperature t j 125 o c operating temperature topr - 40 ~ 85 o c storage temperature t stg - 55 ~ 150 o c parameter symbol condition min. typ. max. unit forward voltage ( 2) v f i f = 0.2 a - 0. 38 0. 45 v i f = 0.5 a - 0.5 0.5 5 v reverse current i r v r = 40v - 2 100 ua junction capacitance c j v r =4v, f=1mhz - 27 pf t herma l resistance (3) r j l junction to lead 112 1 40 k /w device package marking shipping wsb550 7 w - 2/tr sod - 323 * 7 (4 ) 3000/reel&tape single - sided copper, tin - plated and standard footprint. 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
t ypical c haracteristics (ta=25 o c, unless otherwise noted) fig.1 forward voltage vs. fo rward current fig.3 forward current derating fig.2 reverse current vs. reverse voltage fig.4 junction capacitance vs. reverse voltage 0 5 10 15 20 25 0 20 40 60 80 100 120 t=25 ? c f=1mhz c-capacitance (pf) vr-reverse voltage (v) 5 10 15 20 25 30 35 40 45 1e-10 1e-8 1e-6 1e-4 0.01 120 o c 85 o c 25 o c -50 o c reverse current leakage (a) reverse voltage (v) 0 50 100 0 200 400 600 average forward current (ma) lead temperature ( o c ) 0.0 0.2 0.4 0.6 1e-3 0.01 0.1 1 25 o c 120 o c 85 o c -50 o c forward current (a) forward voltage (v) wsb5507 w 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 0 5 10 15 20 25 0 20 40 60 80 100 120 t=25 q c f=1mhz c-capacitance (pf) vr-reverse voltage (v) 5 10 15 20 25 30 35 40 45 1e-10 1e-8 1e-6 1e-4 0.01 120 o c 85 o c 25 o c -50 o c reverse current leakage (a) reverse voltage (v) 0 50 100 0 200 400 600 average forward current (ma) lead temperature ( o c ) 0.0 0.2 0.4 0.6 1e-3 0.01 0.1 1 25 o c 120 o c 85 o c -50 o c forward current (a) forward voltage (v)
package outline dimensions sod - 323 wsb5507 w 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
