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esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 1/22 single-cell li-ion charger ic with system power management general description the emc5060 is a single-cell li-ion charger ic with system power management feature. it charges the battery and power the system simultaneously. the maximum charging current (up to 1.5a) is set by external resistor for fast charging. the output voltage for the system is regulated to a nominal value (three different versions available: 4.4v, 5v or 6v); the actual value of the output voltage depends on the input voltage from the adapter, the charging current and the system loading. with the decrease of the input voltage or the increase of the system loading current, the output voltage drops. when the output voltage drops to a predetermined value (vapm-reg), the active power management function is activated and tries to maintain the output voltage at v apm-reg ; the emc5060 will suffice the system loading with first priority and reduce the charging current temporarily , i.e. under heavy load condition, the emc5060 charges the battery with the remaining available current to keep the output voltage at v apm . in this manner, the charge and discharge cycle of the battery can be reduced. it is possible that the emc5060 fails to maintain the output voltage at v apm-reg ; for example, when the system loading current exceeds the capability of the current-limiting ac adapter. in this scenario, the output voltage drops to the battery voltage, and the system is allowed to draw current from the battery. features ? tqfn-20l package ? active power management(apm) for simultaneously powering the system and charging the battery ? total current supported up to 2 amperes ( system loading having higher priority on the budget ) ? automatic power source selection (ac adapter or battery) ? 40m ? power path for the battery to supply the system power efficiently ? junction temperature detection and thermal regulation during charging process ? external led indicating charger and power good status as well as fault condition ? thermal, short-circuit, and reverse current protection ? short-circuit protection in the low power consumption sleep mode ? sysoff function to cut off the path between the system and the battery ? 6v (v out = 4.4v) maximum input operating applications ? battery-powered devices or equipment ? mobile phones, digital cameras and mp3 players ? radios, other hand-held games and instruments ? solar power system
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 2/22 power flow emc5060 q1 q2 in out bat system vdc ac adapter (or usb) + - 40 m ? the emc5060 selects the power source automatically. in the absence of the input source (ac adapter or usb), the battery is chosen to power the system. under this circumstance, the emc5060 consumes less than 5ua; the power path resistance from the ba ttery to the system is only 40m ? ; all these guarantee a high efficiency and elongate the battery discharge time. with this stringent sleep current budget (< 5ua), the emc5060 is still able to detect an output short condition and cuts off th e power path between the battery and the system under short condition. with the input power present, the mode pin sets the emc5060 in adapter mode or usb mode. in adapter mode, emc5060 does not limit the total current directly, current limiting phenomenon occurs through adaptive power management in response to the output voltage drop. the resistor connected to iset1 pin sets the maximum charging current. this maximum charging current can be halved by pulling down the iset2 pin. in usb mode, the emc5060 will limit the total current within 450ma (iset2=1) or 90ma (iset2=0). the maximum charging current is still set by the resistor connected to iset1 pin; however, because of this current limiting feature, the actual charging current is usually less than 450ma (or 90ma). power source selection and charge current setting mode pin level ac adapter loading power source charge current setting yes usb iset1, limitation depends on iset2 setting low no battery n/a yes ac adapter iset1, half charging rate by setting iset2 to low high no battery n/a
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 3/22 package configuration tqfn-20l (4.5x3.5mm) top view emc5060-xxhg20nrr xx output voltage hg20 tqfn-20l (4.5x3.5mm) package nrr rohs & halogen free package commercial grade temperature rating: -40 to 85c package in tape & reel order, mark & packing information package v out (v) product id marking packing 4.4v EMC5060-44HG20NRR 5.0v emc5060-50hg20nrr tqfn-20l (4.5x3.5mm) 6.0v emc5060-60hg20nrr tape & reel 3k units
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 4/22 pin functions pin no. i/o pin name pin function 1 o vref internal reference; vref output capacitor not required, but one with a value of 0.1 f is recommended. 2 o stat1 charge status flag 1 (open-drain) 3 o stat2 charge status flag 2 (open-drain) 4 i in chip input voltage 5 , 6 i/o bat battery connection; charging or discharging all through this pin 7 i iset2 usb mode total current selection (high =450ma, low = 90ma) and ac mode charge current selection (high = full current, low = half current) 8 i mode set emc5060 in ac(high) or usb(low) mode 9 i ce chip enable (active high) 10 i/o iset1 set the maximum charging current 11 i sysoff cut off the power path between the battery and the output pin 12 i/o ts battery temperature sensing 13 i apm active power management set point no need for capacitors 14 i/o tmr timer program by external resistor connected to this pin. tying tmr and vref together to disable the safety timer 15 , 16 , 17 o out system output 18 o ___ pg power-good status flag (open-drain) 19 , 20 i gnd chip ground
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 5/22 functional block diagram fig. 2
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 6/22 absolute maximum ratings devices are subjected to fail if they stay above absolute maximum ratings. in ---------------------------------------------------------- 0.3v to 18v bat, ce, apm, ___ pg , mode, out, ts ----------- 0.3v to 7v iset1, iset2, stat1, stat2 ---------------------------- 0.3v to 7v vref, tmr --------------------------------- ? 0.3v to (v in + 0.3v) input current ---------------------------------------------------- 3.5a i out output current -------------------------------------------- 4.0a i bat output current ------------------------------- - 4.0a to 3.5a output source current (regulation at 3.3v) ------- 30ma output sink current ( ___ pg , stat1, stat2) ------------- 15ma lead temperature (soldering, 10 sec) ---------------- 260c operating temperature range ---------- ?40c to 85c junction temperature (note 1) ------------------------ 150c storage temperature range ------------- ? 65c to 150c esd susceptibility hbm --------------------------------------- 2kv mm ------------------------------------- 200v operating ratings v in supply voltage ------------- 4.35v to 6v for v out = 4.4v i ac input current ----------------------------------------------- 2.0a operating junction temperature range ----------- 125c thermal data package thermal resistance parameter value ja (note 2) junction-ambient 52 o c/w tqfn-20l (4.5x3.5mm) jc (note 3) junction-case 10 o c/w note 1: t j is a function of the ambient temperature t a and power dissipation p d (t j = t a + (p d ) * ja )). note 2: ja is measured in the natural convection at t a =25 on a highly effective thermal conductivity test board (2 layers , 2s0p ) according to the jedec 51-7 thermal measurement standard. note 3: jc represents the heat resistance between the chip and the package top case.
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 7/22 electrical characteristics ambient temperature t a = 25c and the recommended v in range (unless otherwise noted) parameter symbol test condition min typ max unit active supply current i cc(sply) v in >4.35v 1.1 2 ma sleep mode current (flow into bat pin) i cc(slp) v in < v bat 2.6v < v bat < v o(out-reg) no load at the out pin 2.5 5 a input pin standby current i cc(in-stdby) v in < 6v, total current flow into in pin with ce pin low; no load 200 a bat pin standby current i cc(bat-stdby) total current flow into bat pin with input source present and ce pin low 45 65 a charge done current, bat i ib(bat) current into to the battery after the termination of the charging process 1 5 a voltage regulation regulation v out EMC5060-44HG20NRR v o(out-reg) v in > 4.4 v + v acdo v acdo : in to out dropout voltage 4.4 4.5 v regulation v out emc5060-50hg20nrr v o(out-reg) v in > 5 v + v acdo v acdo : in to out dropout voltage 5 5.2 v regulation v out emc5060-60hg20nrr v o(out-reg) v in > 6 v + v acdo v acdo : in to out dropout voltage 6 6.3 v apm regulation apm set point v (apm-set) v apm-set < v out 2.6 3.8 v apm current source i (apm-set) input present 95 100 105 a apm scale factor sf v apm-reg = v apm-set x sf 1.139 1.15 1.162 q1,q2 drop-out voltage in to out dropout voltage v (acdo) mode = high , i in = 1 a 300 475 mv bat to out dropout voltage v (batdo) v i(bat) > 4 v , i i(bat) = 1 a 40 100 mv battery supplement mode run battery supplement mode v bsup1 v i(bat) > 2 v v i(out) < v i(bat) ? 60 mv v escape battery supplement mode v bsup2 v i(bat) > 2 v v i(out) > v i(bat) ? 20 mv v short circuit protection short-circuit recovery between bat to out i osh1 pull-up source from bat to out for short-circuit recovery v i(out) < v i(bat) ? 200 mv 10 ma in to out short-circuit protection r shac v i(out) < 1 v 500 ?
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 8/22 electrical characteristics (continued) ambient temperature t a = 25c and the recommended v in range (unless otherwise noted) charging-precharge precharge to fast-charge transition voltage v (lowv) voltage on bat 2.9 3 3.1 v precharge current range i o(prechg) 10 150 ma precharge set voltage v (prechg) 225 250 275 mv de-glitch time between fast charge and precharge transition t (dglf) t fall = 100 ns, 10mv overdrive, v i(bat) decreasing below threshold 22.5 ms charging-current regulation fast charge current range i o(bat) v i(bat) > v (lowv) , mode = high 100 1000 1500 ma bat to out pull-up r pbat vi(bat) < 1 v 1000 ? battery charge current set voltage(1) v (set) voltage on iset1 2.47 2.5 2.53 v 100 ma < io(bat) < 1.5 a 375 425 450 charge current set factor k (set) 10 ma < io(bat) < 100 ma 300 450 600 usb mode input current limit iset2 = high 400 500 usb input current range i (usb) iset2 = low 80 90 100 ma charging voltage regulation, vo(do-max) < vcc, iterm < ibat(out) < 1 a battery-charge-voltage 4.2 v ta = 25 c -0.5% 0.5% battery charge voltage regulation accuracy v o(bat-reg) -1% 1% charge termination detection charge done detection current i (term) v i(bat) >v (rch) ,i (term) = (k (set )xv (term) )/ r set 10 150 ma v i(bat) > v (rch) , mode = high 230 250 270 charge done set voltage, measured on iset1 v (term) v i(bat) > v (rch) , mode = low 95 100 130 mv temperature sense comparators high voltage, low temperature threshold v ltf temp fault at v(ts) > v ltf 2.5 v low voltage , high temperature threshold v htf temp fault at v(ts) < v htf 0.5 v current source for temperature sense i ts 95 100 105 a battery recharge threshold recharge threshold voltage v rch v o(bat-re g) - 0.075 v o(bat-re g) - 0.1 v o(bat-re g) - 0.125 v stat1, stat2, and _ _ _ pg low-level output saturation voltage v ol i ol = 5 ma, requiring an external pull-up resistor > 1 k 0.25 v input leakage current i lkg 1 5 a
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 9/22 electrical characteristics (continued) ambient temperature t a = 25c and the recommended v in range (unless otherwise noted) iset2, ce ce pin hold-off time t (ce-hldoff) ce fall low only 4 6 ms low-leve linput voltage v il 0 1.1 high-level input voltage v ih 1.5 v ce pin low-level input current i il -1 ce pin high-level input current i ih 1 iset2 pin low-level input current i il v iset2 = 0.4 v -20 iset2 pin high-level input current i ih v iset2 = v in 40 a mode low-level input voltage v il falling hi low ; 280k 10% applied when low 0.975 1 1.025 v high-level input voltage v ih input rmode sets external hysteresis v il + 0.01 v il + 0.024 v low-level input current, mode i il -1 a timers timer set factor k (tmr) t (chg) = k (tmr) x r (tmr) 0.313 0.36 0.414 s/ ? external resistor limits r (tmr) 30 100 k ? precharge timer t (prechg) 0.09 x t (chg) 0.1 x t (chg) 0.11 x t (chg) s timer fault recovery pull-up from out to bat i (fault) 1 k ? time out extension factor1 k (ext1) the actual charge current less than 50% of maximum fast charge current 2 time out extension factor2 k (ext2) the actual charge current less than 25% of maximum fast charge current 4 charger sleep thresholds sleep-mode entry threshold v (slpent) v in Q v i(bat) + 0.125 sleep-mode exit threshold v (slpexit) v in R v i(bat) + 0.195 mv de-glitch time de-glitch time for charge done detection, temperature fault, recharge and sleep mode detection t (deg) 18.75 ms start-up control boot-up boot-up time t (boot-up) on the first application of input low 120 150 180 ms
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 10/22 electrical characteristics (continued) ambient temperature t a = 25c and the recommended v in range (unless otherwise noted) switching power source timing switching power source from input to battery t sw-bat when input applied. measure from: [ ___ pg : lo -> hi to i (in) > 5 ma ] 50 s thermal shutdown regulation temperature trip t (shtdwn) t j (q1 and q3 only) 150 thermal hysteresis t j (q1 and q3 only) 25 temperature regulation limit t j(reg) t j (q2) 110 130 c uvlo under-voltage lockout v (uvlo) decreasing v in 2.45 2.5 2.65 v hysteresis 27 mv ovp over voltage protection v (ovp) increasing v in (EMC5060-44HG20NRR) 6.2 6.8 v vref output output regulation voltage v o(ref) active only if adp or usb is present 3.3 v regulation accuracy -5% +5% output current i o(vref) 20 ma on resistance r ds(on) out to vref 50 ? output capacitance c (out) 1 f
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 11/22 typical performance characteristics
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 12/22 typical performance characteristics (continued) power on sysoff floating mode pin pull low mode pin pull high iset2 pin pull high iset2 pin pull low
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 13/22 description of charger operation mode iset2 maximum charging current setting pre-charge and charge done current setting high 5 . 2 , i max , ch = = set set set set v r k v mode ac i i i i ch done e ch ch e ch e ; 10 10 max , arg max , arg pr = = ? ? high low 25 . 1 , i max , ch = = set set set set v r k v mode ac i i i i ch done e ch ch e ch e ; 5 5 max , arg max , arg pr = = ? ? low high/low 5 . 2 , i max , ch = = set set set set v r k v mode usb i i i i ch done e ch ch e ch e ; 25 10 max , arg max , arg pr = = ? ?
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 14/22 the maximum charging current, the pre-charge current and charge done current setting are given in the above table. the charging process begins with a pre-charge phase; when the battery voltage reaches the pre-charge threshold v (lowv) , the charger enters the constant current mode. at this stage, the charger tries to charge the battery with the maximum charging current (a constant); however, the actual charging current may be lower due to active power management activated by large system loading or in sufficient input current capability. the thermal fold-back mechanism also reduces the actual charging current when the junction temperature is over 110 c. the battery voltage rises gradually with the constant current entering the battery. when the battery voltage reaches v o(bat-reg) , the charger enters the constant voltage mode. at this stage, the charger keeps the battery voltage at v o(bat-reg) with a decreasing charging current. when the charging current drops below the charge done current setting, nominally the charging process is complete (this can be observed from the external indicator). depending on different versions, after the charge done status indica ted, the charger will stop providing charging current completely or stay in constant voltage mode till time out. when the battery voltage drops below the recharge threshold, a new charge cycle begins. example: with a r set =1k ? , the maximum charging current is about 1a for iset 2=high and 0.5a for iset2=low. the pre-charge current i pre-charge is 100ma. the charge done current setting is 100ma for ac mode and 40ma for usb mode. note the absolute values of pre-charge current and charge done current setting do not vary with iset2. power source selecting i. v in < v bat : v out =v bat ? v (batdo) ii. v bat < v in < v o(out-reg) : v out =v in ? v (acdo) iii. v o(out-reg) + v (acdo) < v in < 6 : v out = v o(out-reg) iv. 6 < v in : v out = v bat ? v (batdo) emc5060 selects power source automatically dependin g on the voltage present at the input. when v in is lower than v bat , the battery is responsible to power the system. the output voltage v out is v bat -v (batdo) . when the input voltage v in is higher than v bat and lower than 6v, the input source is used to supply the system power; the output voltage depends on v in . when v in is lower than v o(out_reg) , the output voltage v out is v in ? v (acdo) ; when v in is high enough ( >(v o(out_reg) +v (acdo) )), the output voltage is regulated at v o(out-reg) . when the input voltage v in is higher than 6v, the current path between in and out is cut off to protect th e chip; emc5060 therefore selects the battery as the power source; the output voltage v out is then v bat -v (batdo).
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 15/22 active power management (apm) ? ac mode (mode=high) i. v (apm-reg) < v out : normal mode; i ch determined by r set ii. v bat < v out < v (apm-reg) : apm mode ; i ch = i supply, max - i out iii. v out < v bat : bat supply mode ? usb 500 mode (mode=low , iset2=high) i. v (apm-reg) < v out : normal mode; i ch determined by r set ii. v bat < v out < v (apm-reg) : apm mode ; i ch = 450ma ? i out iii. v out < v bat : bat supply mode ? usb 100 mode (mode=low , iset2=low) i. v (apm-reg) < v out : normal mode; i ch determined by r set ii. v bat < v out < v (apm-reg) : apm mode ; i ch = 90ma ? iout iii. v out < v bat : bat supply mode the active power management feature ad justs the charging current to resist the output voltage drop due to heavy system loading or insufficient input driving capability. in the extreme situation, the charging current flow would be reversed (the battery helps to supply the system powe r). the active power management regulation voltage v (apm-reg) is given by: v (apm-reg) = i (apm-set) r (apm) sf (1) when the output voltage is higher than v (apm-reg) , the input source is capable of prov iding the charging current (set by r set ) and output current (determined by system loading) simultaneously. when the output voltage goes down and reaches v (apm-reg) due to an increasing loading, emc 5060 starts to reduce the charging current and tries to keep the output voltage at v (apm-reg) . because emc5060 uses the remaining available current to charge the battery, the charging current can be estimated as i supply max ? i out . in ac mode, the i supply max is determined by the driving capability of the ac adapter and emc5060 itself (usually the limiting factor is the emc5060, and i supply max is about 2a). the i supply max is determined by the iset2 setting in usb mode (i supply max is about 450ma with iset2 high, and i supply max is about 90ma with iset2 low). when the loading current keeps increasing and exceeds i supply max , emc5060 can not prevent the output voltage dropping below v (apm-reg) even the charging current is reduced to zero. when the output voltage drops below the battery voltage, the battery helps to supply the loading current and keeps the output voltage roughly at v bat . at this situation, we have: i out = i supply max + i bat (2) (1) r (apm) < 38k ? : v (apm-reg) = i (apm-set) r (apm) sf r (apm) > 41k ? : the v (apm-reg) is set to a predetermined fixed value (4.26v) (2) ibat = (v bat -v out ) / (40m ? power path resistance)
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 16/22 battery temperature protection logic unit emc5060 interrupts the charging process when the battery temperature is out of normal range. emc5060 provides an 100ua sensing current to the negative-temperature coefficient resistor (on the battery side) through the ts pin. the battery protection is achieved by constantly monitoring the voltage at the ts pin. when this voltage is higher than v ltf (nominally 2.5v) or lower than v htf (nominally 0.5v), an under-temperature or over-temperature condition is detected. for a usual 103at-type ntc resistor, the corr esponding temperature range is between 0 c and 45 c. the normal battery temperature range can be modified by adjusting th e ntc resistor or by adding extra resistor network between the ts pin and the negative-temperature coefficient resist or. the charging process would resume after the battery temperature goes back within the normal range. charge timeout setting the charge timeout setting is programmed by the resistor r tmr connected between the tmr and ground pin. the timeout setting is given by: t chg = k tmr r tmr a suggested 36k ? r tmr gives a 3.6 hrs timeout setting because the nominal value of k tmr is 0.36 sec/ ? . in the actual charging process, the charging duration is elongated if the charging current can not reach the maximum current setting (again this relates to system loading and environmen t temperature); therefore, it is possible that the charging process is still on progress while the 3.6 hrs timeout limit ha s been reached. to circumvent this problem, the actual charging current is monitored and the clock rate of the timer counter is halved if the charging current is less than 50% of the maximum fast charging current. this is equivalent to modify the timeout setting temporarily by the following equation: t chg = k ext1 x k tmr r tmr, k ext1 = 2 if the actual charging current is less than one fourth the ma ximum fast charging current, the time out counter rate is reduced to 25%. the temporary timeout setting is given by: t chg = k ext2 x k tmr r tmr, k ext2 = 4 once the abnormal condition is removed (high temperatur e or heavy loading), the charging current resumes the maximum values (set by r set ), and the time out counter will operate in normal rate.
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 17/22 charge status indicator if the battery is present, the open drain pins stat1 and stat2 provides the information about the charger status when the ce pin (chip enable) is set to high. the various charger status and the corresponding stat1 and stat2 levels are given in the above table. connect these pins to the host processor or leds to indicate the charger status. status stat1 stat2 pre-charge on on constant current and constant voltage charge on off charge done off on fault condition (time out, sleep mode, or otp) off off if the battery is absent and i out < 1a, the bat pin cycles between charge done and charging (battery recharge threshold ~4.1v). short circuit protection emc5060 provides short circuit protection fo r both the input and the battery. when v in is larger than v bat , ac adapter (or usb port) is chosen as the power source. if the output vo ltage is lower than 1v, a short circuit condition is detected; the power path between the input and the output will be cut off. the charging process will be interrupted. a 500 ? resistor is used to pull up the output voltage; if the load at the output is removed, the output voltage can be pulled up and the short circuit condition is dissolved. similarly, when the battery is chosen as the power source, an output voltage lower than the battery voltage by 200mv will trigger the short circuit protection mechanism (this corre sponds to a 5a loading current). a 10ma current source is used to pull up the output and detect the removal of the short condition. the power consumption is less than 5ua under the battery supply mode; however, emc5060 is still able to monitor the output voltage and detect a short circuit condition with this limiting current budget. sysoff function the sysoff function is used to cut off the power path between the battery and the output. this means the charger function can be disabled by pulling up the sysoff pin; in this mode, the emc5060 is almost a regulator to power the system. because the power path is cut off, the output voltage will drop to zero when the input source is removed, the battery will not be used to power the system. the sysoff pi n is pulled high internally; therefore, this pin should be pulled to ground for normal operation. recharge process and timer fault elimination if timeout occurs and the battery voltage is higher than the recharge threshold, the charger will stay in the charge done mode until the battery voltage drops below the rechar ge threshold. once the battery voltage drops below the recharge threshold, a new charge cycle starts. if timeout occurs and the battery voltage is lower than th e recharge threshold, the charger will indicate a fault condition and an internal resistor between output and battery will try to pull up the battery voltage. if the internal resistor is unable to pull up the battery voltage to the rechar ge threshold, the charger will stay in fault condition. once the battery voltage is higher than the recharge threshold, the charger removes the pull-up resistor, leaves the fault condition and stay in the charge done mode temporarily. the charger then waits the battery voltage to drop below the recharge threshold and starts a new charge cycle.
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 18/22 typical application circuits 20 19 11
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 19/22 pcb board layout considerations it is important to pay special attention to the pc b layout. the following provides some guidelines. 1) to obtain optimal performance, the decoupling capacitor from the input terminal to gnd and the output filter capacitor from out to gnd should be placed as close as po ssible to the emc5060, with short trace runs to both signal and gnd pins. 2) all low-current gnd connections should be kept separate from the high-current charge or discharge paths from the battery. use a single-point ground technique incorpor ating both the small signal ground path and the power ground path. 3) the high-current charge paths into in and from the bat and out pins must be sized appropriately for the maximum charge current in order to avoid voltage drops in these traces. sata1 r8 100k sata2 charger current = 1a usb_current r5 36k j9 ce 1 2 3 pg yellow vin chip enable c4 1uf battery c7 1uf c6 10uf h : enable l : disable r3 1k c2 10uf h : a dp l : usb r1 1.5k r11 10k stat1 red r2 1.5k h : 500ma l : 100ma vout d1 schottky r4 0/nc vbat r9 100k aur9807 u? 2 1 3 7 6 5 4 8 9 10 11 12 13 14 15 16 17 18 19 20 stat1 vref stat2 iset2 bat bat in mod e ce iset1 sysoff ts apm tmr out out out /pg gnd gnd stat2 green r7 100k j11 temp 1 mode r3 1.5k vin j3 sy s_off 1 2 c3 10uf j8 mod e 1 2 3 c5 0.47uf r6 37k j7 iset2 1 2 3 c1 10uf
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 20/22 package information tqfn-20l 4.5x3.5mm dimension in millimeter symbols min max a 0.70 0.80 a1 0.00 0.05 b 0.18 0.3 d 3.4 3.6 d2 1.95 2.1 e 4.4 4.6 e2 2.95 3.1 e 0.50 bsc. l 0.30 0.50
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 21/22 revision history revision date description 0.1 2011.07.19 original 0.2 2011.09.15 skip maximum & minimum values of low & high temperature sense threshold 0.3 2011.12.02 modify package information
esmt/emp emc5060 elite semiconductor memory technology inc./elite micropower inc. publication date : dec. 2011 revision : 0.3 22/22 important notice all rights reserved. no part of this document may be repr oduced or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this docume nt are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is pr esented only as a guide or examples for the application of our products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellect ual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted un der any patents, copyrights or other intellectual property righ ts of esmt or others. any semiconductor devices may have in herently a certain rate of failure. to minimize risks associated with cu stomer's application, adequate design and operating safeguards against inju ry, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.

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