tsm 150p03 tai wan semiconductor document number: ds_p 000016 5 1 version: a 15 p - channel power mosfet - 3 0v, - 30 a , 1 5 m features fast switching suitable for 4.5 v drive applications pb - free plating rohs compliant halogen - free mold compound key performance parameters p arameter value unit v ds - 3 0 v r ds(on) (max) v gs = - 10 v 15 m v gs = - 4 .5v 30 q g 4.1 nc application load switch networking pdfn33 notes: moisture sensitivity level: level 3. per j - std - 020 absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol l imit unit drain - source volt age v ds - 3 0 v gate - source voltage v gs 2 0 v continuous drain current (note 1 ) t c = 25 c i d - 30 a t c = 100 c - 19 pulsed drain current (note 2 ) i dm - 120 a total power dissipation @ t c = 25 c p dtot 23 w operating junction and storage temperature rang e t j , t stg - 55 to +1 50 c thermal performance p arameter s ymbol limit unit junction to case thermal resistance r ? j c 5.4 c /w junction to ambient thermal resistance r ? ja 62 c /w notes: r ? ja is the sum of the junction - to - case and case - to - ambient therma l resistances. the case thermal reference is defined at the solder mounting surface of the drain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design. r ? ja shown below for single device operation on fr - 4 pcb in still air.
tsm 150p03 tai wan semiconductor document number: ds_p 000016 5 2 version: a 15 electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol m in t yp m ax u nit static (note 3 ) drain - source breakdown voltage v gs = 0 v, i d = - 250a bv dss - 3 0 -- -- v gate threshold voltage v ds = v gs , i d = - 250a v gs(th) - 1 .2 - 1 .6 - 2.5 v gate body leakage v gs = 2 0 v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = - 3 0 v, v gs = 0v i dss -- -- - 1 a drain - source on - state resistance v gs = - 10 v, i d = - 8 a r ds(on) -- 13 1 5 m gs = - 4 .5 v, i d = - 6 a 22 30 dynamic (note 4 ) total gate charge v ds = - 1 5 v, i d = - 8 a, v gs = - 4.5 v q g -- 14.6 -- nc gate - source charge q gs -- 4.1 -- gate - drain charge q gd -- 6.3 -- input capacitance v ds = - 15 v, v gs = 0v, f = 1.0mhz c iss -- 1730 -- pf output capacitance c oss -- 180 -- reverse transfer capacitance c rss 125 switching (note 5 ) turn - on delay time v dd = - 1 5 v, r gen = 6 d = - 1a, v gs = - 10 v, t d(on) -- 9 -- ns turn - on rise time t r -- 21.8 -- turn - off delay time t d (off) -- 59.8 -- turn - off fall time t f -- 14.4 -- source - drain diode (note 3 ) forward on voltag e i s = - 1 a, v gs = 0v v sd - - -- - 1 v notes: 1. current limited by package 2. pulse width limited by the m aximum junction temperature 3. p ulse test: pw 300s , d u ty cycle 2% 4. for design aid only, not subject to production testing. 5. switching time is essentially independent of operating temperature.
tsm 150p03 tai wan semiconductor document number: ds_p 000016 5 3 version: a 15 ordering information part no. package packing tsm 150p03pq33 rgg pdfn33 5 , 000 pcs / 13 reel note: 1. c ompliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec 2. halogen - free according to iec 61249 - 2 - 21 definition
tsm 150p03 tai wan semiconductor document number: ds_p 000016 5 4 version: a 15 characteristics curves ( t c = 25c unless otherwise noted) continuous drain current vs. t c gate charge on - resistance vs. junction temperature threshold voltage vs. junction temperature normalized thermal transient impedance curve maximum safe operating area normalized gate threshold voltage (v) t j , junction temperature ( c ) - v gs , gate to source voltage (v) qg, gate charge ( nc ) normalized thermal response (r jc d , continuous drain current (a) i d , continuous drain current (a) t c , case temperature ( c ) normalized on resistance (m ? j , junction temperature ( c ) square wave pulse duration (s) - v d s , drain to source voltage (v)
tsm 150p03 tai wan semiconductor document number: ds_p 000016 5 5 version: a 15 package outline dimensions (unit: millimeters ) pdfn33 suggested pad layout (unit: millimeters ) marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
tsm 150p03 tai wan semiconductor document number: ds_p 000016 5 6 version: a 15 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and a gree to fully indemnify tsc for any damages resulting from such improper use or sale.
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