4v drive pch mosfet RP1E075RP ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) high power package. 3) 4v drive. ? application switching ? inner circuit ? packaging specifications package code basic ordering unit (pieces) RP1E075RP ? absolute maximum ratings (ta = 25 ? c) unit drain-source voltage v gate-source voltage v continuous a pulsed a continuous a pulsed a power dissipation w channel temperature ? c range of storage temperature ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance unit channel to ambient ? c / w *mounted on a ceramic board. parameter type parameter source current (body diode) drain current ? 1000 tr taping tstg tch p d i sp ? 7.5 ? 20 i s i dp i d v gss 2.0 ? 30 ? 1.6 ? 30 ? 30 limits rth (ch-a) 62.5 limits symbol v dss symbol ? 55 to +150 150 *2 *1 *1 * (1) source (2) source (3) gate (4) drain (5) drain (6) drain ? 1 esd protection diode ? 2 body diode ?2 ?1 (5) (4) (2) ( 1) ( 3) (6) mpt6 (single) (1) (2) (3) (6) (5) (4) 1/5 2010.08 - rev.a www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E075RP ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma -1521 i d = ? 7.5a, v gs = ? 10v -2231 i d = ? 4a, v gs = ? 4.5v -2535 i d = ? 4a, v gs = ? 4.0v forward transfer admittance l y fs l9 - - si d = ? 7.5a, v ds = ? 10v input capacitance c iss - 1900 - pf v ds = ? 10v output capacitance c oss - 250 - pf v gs =0v reverse transfer capacitance c rss - 250 - pf f=1mhz turn-on delay time t d(on) - 14 - ns i d = ? 4a, v dd ? 15v rise time t r - 25 - ns v gs = ? 10v turn-off delay time t d(off) - 100 - ns r l =3.8 ? fall time t f - 70 - ns r g =10 ? total gate charge q g - 21 - nc i d = ? 7.5a, v dd ? 15 ? gate-source charge q gs -5-ncv gs = ? 5v r l =2.0 ? gate-drain charge q gd -7-ncr g =10 ? *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 7.5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * 2/5 2010.08- rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E075RP ? electrical characteristic curves 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 ta=25c pulsed v gs = -10v v gs = -4.5v v gs = -4.0v v gs = -2.5v v gs = -3.5v v gs = -3.0v v gs = -2.8v 0.001 0.01 0.1 1 10 0123 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 1 10 100 1000 0.1 1 10 v gs = -4.0v v gs = -4.5v v gs = -10v ta=25c pulsed 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 1 2 3 4 5 6 7 0246810 ta=25c pulsed v gs = -10v v gs = -4.5v v gs = -4.0v v gs = -2.5v v gs = -3.5v v gs = -3.0v v gs = -2.8v 1 10 100 1000 0.1 1 10 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 1 10 100 1000 0.1 1 10 v gs = -10v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 100 0.01 0.1 1 10 100 v ds = -10v pulsed ta= -25c ta=25c ta=75c ta=125c 1 10 100 1000 0.1 1 10 v gs = -4.0v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain - source on - state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain - source on - state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain - source on - state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : -i d [a] source current : - i s [a] source-drain voltage : -v sd [v] 3/5 2010.08- rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E075RP 0 50 100 0 5 10 15 ta=25c pulsed i d = -4.0a i d = -7.5a 0 2 4 6 8 10 0 10203040 ta=25c v dd = ? 15v i d = ? 7.5a r g =10? pulsed 100 1000 10000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 0.01 0.1 1 10 100 1000 0.1 1 10 100 p w = 10ms ta = 25c single pulse mounted on ceramic board dc operation operation in this area is limited by r ds(on) (v gs =-10v) p w =1ms p w =100us 1 10 100 1000 10000 0.01 0.1 1 10 t f t d(on) t d(off) ta=25c v dd = -15v v gs = -10v r g =10? pulsed t r fig.10 static drain-source on-state resistance vs. gate source fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fi g .11 switchin g characteristics fig.14 maximum safe operating aera fig.15 normalized transient thermal resistance vs. pulse width static drain - source on - state resistance : r ds (on)[m ? ] gate-source voltage : - v gs [ v ] switching time : t [ns] drain-current : -i d [ a ] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] capacitance : c [pf] drain-source voltage : -v ds [v] drain current : -i d (a) pulse width : pw(s) normarized transient thermal resistance : r (t) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25c single pulse : 1unit rth(ch-a)(t) = r(t)rth(ch-a) rth(ch-a) = 62.5 c/w 4/5 2010.08- rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E075RP ? measurement circuits fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd v gs r g v d s d.u.t. i d r l v dd v gs i g(co n st .) r g v d s d.u.t. i d r l v dd 5/5 2010.08- rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
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