leshan radio company, ltd. s-LSI1013LT1G 1 sot-23 2 3 10000/tape&reel ordering information device shipping 3000/tape&reel LSI1013LT1G lsi1013lt3g marking marking diagram a1 = specific device code m = month code a1 1 3 2 (top view) drain gate 3 1 2 source a1 a1 features trenchfet power mosfet: 1.8-v rated gate-source esd protected: 2000 v high-side switching low on-resistance: 1.2 low threshold: 0.8 v (typ) fast switching speed: 14 ns benefits ease in driving switches low offset (error) voltage low-voltage operation high-speed circuits low battery voltage operation applications drivers: relays, solenoids, lamps, hammers, displays, memories battery operated systems power supply converter circuits load/power switching cell phones, pagers p-channel 1.8-v (g-s) mosfet absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds -20 v gate-source v oltage v gs 6 v continuous drain current (t j = 150 c) b t a = 25 c i d -400 -350 c on ti nuous d ra i n c urren t (t j = 150 c) b t a = 85 c i d -300 -275 ma pulsed drain current a i dm -1000 ma continuous source current (diode conduction) b i s -275 -250 225 maximum power dissipation d mw operating junction and storage temperature range t j , t stg ? 55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v notes d. pulse width limited by maximum junction temperature. e. surface mounted on fr4 board. m p rev .o 1/6 LSI1013LT1G s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-LSI1013LT1G s-lsi1013lt3g
leshan radio company, ltd. LSI1013LT1G , s-LSI1013LT1G
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 1 2 a v ds = ? 16 v, v gs = 0 v ? 0.3 ? 100 na zero gate voltage drain current i dss v ds = ? 16 v, v gs = 0 v, t j = 85 c ? 5 a on-state drain current a i d(on) v ds = ? 5 v, v gs = ? 4.5 v ? 700 ma v gs = ? 4.5 v, i d = ? 350 ma 0.8 1.2 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 300 m a 1.2 1.6 ds(on) v gs = ? 1.8 v, i d = ? 10 m a 1.8 2.7 forward transconductance a g fs v ds = ? 10 v, i d = ? 250 ma 0.4 s diode forward voltage a v sd i s = ? 150 ma, v gs = 0 v ? 0.8 ? 1.2 v dynamic b total gate charge q g 1500 gate-source charge q gs v ds = ? 10 v, v gs = ? 4.5 v, i d = ? 250 ma 150 pc gate-drain charge q gd 450 turn-on delay time t d(on) 5 rise time t r v dd = ? 10 v, r l = 47 9 turn-off delay time t d(off) v dd = ? 10 v, r l = 47 i d ? 200 ma, v gen = ? 4.5 v, r g = 10 35 ns fall time t f 11 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. rev .o 2/6
leshan radio company, ltd. for the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. 0 200 400 600 800 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 thru 3 v t j = ? 55 c 125 c 2 v 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (ma) i d 1.8 v 2.5 v ? on-resistance ( r ds(on) ) 0 20 40 60 80 100 120 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.8 1.6 2.4 3.2 4.0 0 200 400 600 800 1000 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 10 v i d = 250 ma i d ? drain current (ma) v gs = 4.5 v i d = 350 ma v gs = 1.8 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) v gs = 4.5 v v gs = 2.5 v v gs = 1.8 v i d = 150 ma rev .o 3/6 LSI1013LT1G , s-LSI1013LT1G
leshan radio company, ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 0123456 i d = 350 ma 1000 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) i d = 200 ma t j = 125 c t j = 25 c t j = ? 55 c 10 100 i s ? source current (ma) ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 0.3 ? 50 ? 25 0 25 50 75 100 125 i d = 0.25 ma threshold voltage variance vs. temperature variance (v) v gs(th) t j ? temperature ( c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? 50 ? 25 0 25 50 75 100 125 i gss vs. temperature t j ? temperature ( c) i gss ? ( a) 0 1 2 3 4 5 6 7 ? 50 ? 25 0 25 50 75 100 125 bv gss vs. temperature t j ? temperature ( c) v gs = 4.5 v bv gss ? gate-to-source breakdown voltage (v) rev .o 4/6 LSI1013LT1G , s-LSI1013LT1G
leshan radio company, ltd. typical characteristics (t a = 25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient (sc-75a) square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja =833 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance rev .o 5/6 LSI1013LT1G , s-LSI1013LT1G
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 rev .o 6/6 LSI1013LT1G , s-LSI1013LT1G
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