VUO35-08NO7 3~ rectifier bridge standard rectifier module - ~ + ~ ~ part number VUO35-08NO7 features / advantages: applications: package: package with dcb ceramic improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current diode for main rectification for three phase bridge configurations supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors pws-a industry standard outline rohs compliant easy to mount with two screws base plate: aluminium internally dcb isolated advanced power cycling rrm 800 i35 fsm 400 dav v = v a a = = i 3~ rectifier ixys reserves the right to change limits, conditions and dimensions. 20130605a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO35-08NO7 v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.10 r 4.2 k/w r min. 35 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 85 p tot 29 w t = 25c c r k/w 0.6 15 800 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.38 t = 25c vj 150 v f0 v 0.80 t = c vj 150 r f 12.9 m ? v 1.01 t = c vj i = a f v 15 1.38 i = a f 45 i = a f 45 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 800 max. repetitive reverse blocking voltage t = 25c vj c j 10 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 400 430 580 555 a a a a 340 365 800 770 800 dav d = rectangular ? bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 900 ixys reserves the right to change limits, conditions and dimensions. 20130605a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO35-08NO7 ratings xxxx-xxxx yycw lot# made in germany circuit diagram product number date code package t vj c m d nm 1.75 mounting torque 1.25 t stg c 125 storage temperature -40 weight g 100 symbol definition typ. max. min. conditions virtual junction temperature unit m t nm 1.75 terminal torque 1.25 v v t = 1 second v t = 1 minute isolation voltage mm mm 6.5 8.5 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 100 a per terminal 150 -40 terminal to terminal pws-a delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol VUO35-08NO7 502541 box 20 VUO35-08NO7 standard 2500 3000 isol threshold voltage v 0.8 m ? v 0 max r 0 max slope resistance * 11.7 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150 c * on die level ixys reserves the right to chang e limits, conditions and dimensions. 20130605a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO35-08NO7 1.1 24 22 5 10 4.3 9 927 45 9 21 45 55 6 4.8 8 7 m4 ~~~ - ~ + ~ ~ outlines pws-a ixys reserves the right to chang e limits, conditions and dimensions. 20130605a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO35-08NO7 0 1 1 200 400 600 800 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 10 -3 10 -2 10 -1 10 0 150 200 250 300 3 5 0 1 10 100 1000 10000 100000 0 1 2 3 4 5 0 25 50 75 100 125 150 175 04812 0 4 8 12 16 0 25 50 75 100 125 150 0 4 8 12 16 20 24 28 32 constants for z thjc calculation: ir th (k/w) t i (s) 1 0.194 0.024 2 0.556 0.070 3 0.450 3.250 4 3.000 9.300 0.8 x v rrm 50 hz t vj = 45c v r =0v r thja : 0.6 kw 0.8 kw 1kw 2kw 4kw 8kw dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 150c t vj =25c t vj =150c t vj = 150c fig. 1 forward current vs. voltage drop per diode fig. 2 surge overload current vs. time per diode fig. 3 i 2 tvs.timeperdiode fig. 4 power dissipation vs. forward current and ambient temperature per diode fig. 5 max. forward current vs. case temperature per diode fig. 6 transient thermal impedance junction to case vs. time per diode dc = 1 0.5 0.4 0.33 0.17 0.08 t vj =45c rectifier ixys reserves the right to chang e limits, conditions and dimensions. 20130605a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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