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august 2011 doc id 022110 rev 1 1/13 13 STP90N55F4 n-channel 55 v, 0.0064 , 90 a, to-220 stripfet? deepgate? power mosfet features exceptional dv /dt capability extremely low on-resistance r ds(on) 100% avalanche tested applications switching applications description this device is an n-channel power mosfet developed using st?s stripfet? deepgate? technology. the device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. figure 1. internal schematic diagram type v dss r ds(on) max i d STP90N55F4 55 v < 0.008 90 a to-220 1 2 3 tab ! - v $ 4 ! " ' 3 table 1. device summary order codes marking packages packaging STP90N55F4 90n55f4 to-220 tube www.st.com
contents STP90N55F4 2/13 doc id 022110 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 STP90N55F4 electrical ratings doc id 022110 rev 1 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 55 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 90 a i d drain current (continuous) at t c = 100 c 65 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 360 a p tot total dissipation at t c = 25 c 150 w derating factor 1 w/c e as (2) 2. starting t j = 25 c, i d = 32.5 a, v dd = 45 v single pulse avalanche energy 290 mj t stg storage temperature ? 55 to 175 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-a thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c electrical characteristics STP90N55F4 4/13 doc id 022110 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 55 v i dss zero gate voltage drain current (v gs = 0) v ds = 55 v 1 a v ds = 55 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 45 a 0.0064 0.008 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 4800 pf c oss output capacitance - 350 - pf c rss reverse transfer capacitance 210 pf q g total gate charge v dd = 27.5 v, i d = 90 a, v gs = 10 v figure 14 90 nc q gs gate-source charge - 25 - nc q gd gate-drain charge 26 nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 27.5 v, i d = 90 a r g =4.7 v gs = 10 v figure 13 - 20 60 - ns ns t d(off) t f turn-off-delay time fall time v dd = 27.5 v, i d = 90 a, r g =4.7 , v gs = 10 v figure 13 - 55 30 - ns ns STP90N55F4 electrical characteristics doc id 022110 rev 1 5/13 table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 90 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) 360 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 90 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 90 a, v dd = 44 v di/dt = 100 a/s, t j = 150 c figure 15 - 50 105 4 ns nc a electrical characteristics STP90N55F4 6/13 doc id 022110 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on resistance ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! 6 6 6 ' 3 6 6 ! - v ) $ 6 ' 3 6 ! 6 $ 3 6 ! - v " 6 $ 3 3 4 * ? # n o r m ) $ ? ! ! - v 2 $ 3 o n ) $ ! m / h m 6 ' 3 6 ! - v STP90N55F4 electrical characteristics doc id 022110 rev 1 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized on resistance vs temperature figure 11. normalized gate threshold voltage vs temperature figure 12. source-drain diode forward characteristics 6 ' 3 1 g n # 6 6 $ $ 6 ) $ ! ! - v # 6 $ 3 6 p & |