leshan radio com p an y , ltd. dual general purpose t ransistors thes e transistors are designed for general purpose amplifier applications. they are housed in the sot363/sc88 which is designed for low power surface mount applications. ? device marking: (s-)l bc856bdw1t1g= 3b (s-)l bc857bdw1t1g= 3f (s-)l bc857cdw1t1g= 3g (s-)l bc858bdw1t1g= 3k (s-)l bc858cdw1t1g = 3l maximum r a tings rating symbol bc856 bc857 bc858 unit collecto r emitte r v oltage v ceo 65 45 30 v collectorbase voltage v cbo 80 50 30 v emitterbase voltage v ebo 5.0 5.0 5.0 v collector current continuous i c 100 100 100 madc thermal characteristics characteristic symbol max unit total device dissipation per device fr5 board (note 1.) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c thermal resistance, junction to ambient r ja 328 c/w junction and storage temperature range t j , t stg 55 to +150 c 1. fr5 = 1.0 x 0.75 x 0.062 in device marking see table ordering information s-lbc85 ** dw1t1g 1 2 3 4 5 6 sot-363 q 1 q 2 (1) (2) (3) (4) (5) (6) device shipping lbc85*bdw1t1g 10000/tape & reel 3000/tape & reel lbc85*bdw1t3g rohs requirements. we declare that the material of product compliance with (s-)l bc856adw1t1g= 3a rev.o 1/6 lbc85 ** dw1t1g and control change requirements; aec-q101 qualified and ppap capable. s- prefix for automotive and other applications requiring unique site
l e s h a n r a d i o c o m p a n y , l t d . l bc856bdw1t1g , l bc857bdw1t1g, l bc857cdw1t1g, l bc858bdw1t1g, l bc858cdw1t1g electrica l characteristics (t a = 2 5 c unless otherwise noted) characteristic symbol min t y p max unit off characteristics collecto r emitte r breakdown v oltage (i c = 10 ma ) l bc857 series l bc858 series v (br)ceo 65 45 30 v collecto r emitter breakdown v oltage (i c = 10 m a, v eb = 0 ) l bc856 series l bc857 series l bc858 series v (br)ces 80 50 30 v collecto r base breakdown v oltage (i c = 10 a a ) l bc856 series l bc857 series l bc858 series v (br)cbo 80 50 30 v emitte r base breakdown v oltage (i e = 1.0 a a ) l bc856 series l bc857 series l bc858 series v ( br ) ebo 5.0 5.0 5.0 v collector cuto f f current (v c b = 30 v) collector cuto f f current (v c b = 30 v , t a = 15 0 c) i cbo 15 4.0 na m a o n characteristics dc current gain (i c = 10 m a, v c e = 5.0 v ) l bc856b, l bc857b, l bc858b l bc857c, l bc858c (i c = 2.0 ma, v c e = 5.0 v ) l bc 856b, l bc857b, l bc858b l bc857c, l bc858c h fe 220 420 150 270 290 520 475 800 collecto r emitter saturation v oltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v ce(sat) 0.3 0.65 v bas e emitter saturation v oltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v be ( sat) 0.7 0.9 v bas e emitter on v oltage (i c = 2.0 ma, v c e = 5.0 v) (i c = 10 ma, v c e = 5.0 v) v be ( on) 0.6 0.75 0.82 v small signa l characteristics curren t gai n bandwidth product (i c = 10 ma, v c e = 5.0 vdc, f = 100 mhz) f t 100 mhz output capacitance (v c b = 10 v , f = 1.0 mhz) c ob 4.5 pf noise figure (i c = 0.2 ma, v c e = 5.0 vdc, r s = 2.0 k w , f = 1.0 khz, bw = 200 hz) nf 10 db lbc856 series l bc856adw1t1g, l bc856a 90 l bc856a 125 180 250 rev.o 2/6 s-lbc856bdw1t1g , s-lbc857bdw1t1g, s-lbc857cdw1t1g, s-lbc858bdw1t1g, s-lbc858cdw1t1g s-lbc856adw1t1g,
l e s h a n r a d i o c o m p a n y , l t d . typica l characteristics l bc856 figure 1. dc current gain i c , collector current (amp) figure 2. aono voltage i c , collector current (ma) -0.8 -1.0 -0.6 -0.2 -0.4 1.0 2.0 -0.1 -1.0 -10 -200 -0.2 0.2 0.5 -0.2 -1.0 -10 -200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = -5.0 v figure 3. collector saturation region i b , base current (ma) figure 4. baseemitter temperature coefficient i c , collector current (ma) -1.0 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) q -0.2 -2.0 -10 -200 -1.0 t j = 25 c i c = -10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = -5.0 v t a = 25 c 0 -0.5 -2.0 -5.0 -20 -50 -100 -0.05 -0.2 -0.5 -2.0 -5.0 -100 ma -20 ma -1.4 -1.8 -2.2 -2.6 -3.0 -0.5 -5.0 -20 -50 -100 -55 c to 125 c q vb for v be -2.0 -5.0 -20 -50 -100 figure 5. capacitance v r , reverse voltage (volts) 40 figure 6. currentgain bandwidth product i c , collector current (ma) -0.1 -0.2 -1.0 -50 2.0 -2.0 -10 -100 100 200 500 50 20 20 10 6.0 4.0 -1.0 -10 -100 v ce = -5.0 v c, capacitance (pf) f, current-gain - bandwidth product t -0.5 -5.0 -20 t j = 25 c c ob c ib 8.0 -50 ma -200 ma rev.o 3/6 l bc856bdw1t1g , l bc857bdw1t1g, l bc857cdw1t1g, l bc858bdw1t1g, l bc858cdw1t1g l bc856adw1t1g, s-lbc856bdw1t1g , s-lbc857bdw1t1g, s-lbc857cdw1t1g, s-lbc858bdw1t1g, s-lbc858cdw1t1g s-lbc856adw1t1g,
l e s h a n r a d i o c o m p a n y , lt d . typica l characteristics l bc857/ l bc858 figure 7. normalized dc current gain i c , collector current (madc) 2.0 figure 8. asaturationo and aono voltages i c , collector current (madc) -0.2 0.2 figure 9. collector saturation region i b , base current (ma) figure 10. baseemitter temperature coefficient i c , collector current (ma) -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 0 -0.2 -0.4 -0.1 -0.3 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.7 0.5 0.3 -0.2 -10 -100 -1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce = -10 v t a = 25 c -55 c to +125 c i c = -100 ma i c = -20 ma -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c = -200 ma i c = -50 ma i c = -10 ma figure 11. capacitances v r , reverse voltage (volts) 10 figure 12. currentgain bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c t a = 25 c 1.0 rev.o 4/6 l bc856bdw1t1g , l bc857bdw1t1g, l bc857cdw1t1g, l bc858bdw1t1g, l bc858cdw1t1g l bc856adw1t1g, s-lbc856bdw1t1g , s-lbc857bdw1t1g, s-lbc857cdw1t1g, s-lbc858bdw1t1g, s-lbc858cdw1t1g s-lbc856adw1t1g,
l e s h a n r a d i o c o m p a n y , l t d . figure 13. thermal response figure 14. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 14 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 13. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. t, time (ms) 1.0 r(t), transient thermal 1.0 0 resistance (normalized) 0.1 0.01 0.001 10 100 1.0k 10k 100k d = 0.5 0.2 0.1 0.05 single pulse z q ja (t) = r(t) r q ja r q ja = 328 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 1.0m 0.02 0.01 rev.o 5/6 l bc856bdw1t1g , l bc857bdw1t1g, l bc857cdw1t1g, l bc858bdw1t1g, l bc858cdw1t1g l bc856adw1t1g, s-lbc856bdw1t1g , s-lbc857bdw1t1g, s-lbc857cdw1t1g, s-lbc858bdw1t1g, s-lbc858cdw1t1g s-lbc856adw1t1g,
l e s h a n r a d i o c o m p a n y , l t d . 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm b 0.2 (0.008) mm 12 3 a g s h c n j k 65 4 sc-88/sot - 363 d 6 p l - b - n o t e s : 1 . d i m e n s i o n i n g a n d t o l e r a n c i n g p e r a n s i y 1 4 . 5 m , 1 9 8 2 . 2 . c o n t r o l l i n g d i m e n s i o n : i n c h . i n c h e s m i l l i m e t e r s d i m m i n m a x m i n m a x a 0 . 0 7 1 0 . 0 8 7 1 . 8 0 2 . 2 0 b 0 . 0 4 5 0 . 0 5 3 1 . 1 5 1 . 3 5 c 0 . 0 3 1 0 . 0 4 3 0 . 8 0 1 . 1 0 d 0 . 0 0 4 0 . 0 1 2 0 . 1 0 0 . 3 0 g 0 . 0 2 6 b s c 0 . 6 5 b s c h - - - 0 . 0 0 4 - - - 0 . 1 0 j 0 . 0 0 4 0 . 0 1 0 0 . 1 0 0 . 2 5 k 0 . 0 0 4 0 . 0 1 2 0 . 1 0 0 . 3 0 n 0 . 0 0 8 r e f 0 . 2 0 r e f s 0 . 0 7 9 0 . 0 8 7 2 . 0 0 2 . 2 0 p i n 1 . e m i t t e r 2 2 . b a s e 2 3 . c o l l e c t o r 1 4 . e m i t t e r 1 5 . b a s e 1 6 . c o l l e c t o r 2 rev.o 6/6 l bc856bdw1t1g , l bc857bdw1t1g, l bc857cdw1t1g, l bc858bdw1t1g, l bc858cdw1t1g l bc856adw1t1g, s-lbc856bdw1t1g , s-lbc857bdw1t1g, s-lbc857cdw1t1g, s-lbc858bdw1t1g, s-lbc858cdw1t1g s-lbc856adw1t1g,
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