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insulated gate bipolar transistor with ultra-low vf diode for induction heating and soft switching applications benefits ? device optimized for induction heating and soft switching applications ? high efficiency due to low v ce(on) , low switching losses and ultra-low v f ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi features ? low v ce (on) trench igbt technology ? low switching losses ? square rbsoa ? ultra-low v f diode ? 1300vpk repetitive transient capacity ? 100% of the parts tested for i lm ? positive v ce (on) temperature co-efficient ? tight parameter distribution ? lead free package
gc e gate collector emitter to-247ad g c e c e g n-channel c v ces = 1200v i c = 25a, t c = 100c t j(max) = 150c v ce(on) typ. = 1.9v @ i c = 20a
form quantit y irg7ph35ud1mpb f to-247ad tube 25 irg7ph35ud1mpb f base part number package type standard pac k orderable part number absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v v (b r )t r ansient repetitive transient collector-to-emitter voltage 1300 i c @ t c = 25c continuous collector current 50 i c @ t c = 100c continuous collector current 25 i cm pulse collector current, v ge =15v 150 a i lm clamped inductive load current, v ge =20v 80 i f @ t c = 25c diode continous forward current 50 i f @ t c = 100c diode continous forward current 25 i fm diode maximum forward current 80 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 179 w p d @ t c = 100c maximum power dissipation 71 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.70 r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 1.35 c/w r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ???

notes: v cc = 80% (v ces ), v ge = 20v, r g = 10 ?. pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j approximately 90c. fbsoa operating conditions only. v ge = 0v, t j = 75c, pw electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v ( br ) ces col l ector - to- e mi tter b r eak down v ol tage 1200 ? ? v v ge = 0v, i c = 100a ? v (b r)ces / ? t j t emper atu r e coef f . of b r eak down v ol tage ? 1.2 ? v/c v ge = 0v, i c = 1ma (25c-150c) v ce ( on ) collector-to-emitter saturation voltage ? 1.9 2.2 v i c = 20a, v ge = 15v, t j = 25c ?2.3? i c = 20a, v ge = 15v, t j = 150c v ge ( th ) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 600a gfe forward transconductance ? 22 ? s v ce = 50v, i c = 20a, pw = 30s i ces collector-to-emitter leakage current ? 1.0 100 a v ge = 0v, v ce = 1200v ?120? v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop ? 1.15 1.26 v i f = 20a ?1.08? i f = 20a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 85 130 i c = 20a q g e gate-to-emitter charge (turn-on) ? 15 20 nc v ge = 15v q g c gate-to-collector charge (turn-on) ? 35 50 v cc = 600v i c = 20a, v cc = 600v, v ge = 15v e of f turn-off switching loss ? 620 850 j r g = 10 ? , l = 200h,l s = 150nh, t j = 25c energy losses include tail t d ( off ) turn-off delay time ? 160 180 ns i c = 20a, v cc = 600v, v ge = 15v t f fall time ? 80 105 r g = 10 ? , l = 200h,l s = 150nh, t j = 25c i c = 20a, v cc = 600v, v ge =15v e of f turn-off switching loss ? 1120 ? j r g = 10 ? , l = 200h,l s = 150nh, t j = 150c energy losses include tail t d ( off ) turn-off delay time ? 190 ? ns i c = 20a, v cc = 600v, v ge = 15v t f fall time ? 210 ? r g = 10 ? , l = 200h,l s = 150nh, t j = 150c c ies input capacitance ? 1940 ? pf v ge = 0v c oes output capacitance ? 120 ? v cc = 30v c res reverse transfer capacitance ? 40 ? f = 1.0mhz t j = 150c, i c = 80a rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v rg = 10 ? , v ge = +20v to 0v conditions

fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 6 - typ. igbt output characteristics t j = 25c; tp = 30s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 30s fig. 4 - reverse bias soa t j = 150c; v ge = 20v 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) fig. 3 - typical gate threshold voltage (normalized) vs. junction temperature 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 25 50 75 100 125 150 t j , temperature (c) 0.5 0.6 0.7 0.8 0.9 1.0 v g e ( t h ) , g a t e t h r e s h o l d v o l t a g e ( n o r m a l i z e d ) i c = 600a 25 50 75 100 125 150 t c (c) 0 10 20 30 40 50 i c ( a ) 25 50 75 100 125 150 t c (c) 0 25 50 75 100 125 150 175 200 p t o t ( w )

fig. 12 - typ. transfer characteristics v ce = 50v; tp = 30s fig. 11 - typical v ce vs. v ge t j = 150c fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 8 - typ. diode forward voltage drop characteristics 0.0 0.5 1.0 1.5 2.0 v f (v) 0 10 20 30 40 50 60 70 80 i f ( a ) 25c 150c fig. 7 - typ. igbt output characteristics t j = 150c; tp = 30s 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 4 8 12 16 20 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 5 101520 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 5 101520 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 45678910 v ge, gate-to-emitter voltage (v) 0 10 20 30 40 50 60 70 80 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 150c t j = 25c

fig. 18 - typical gate charge vs. v ge i ce = 20a; l = 2.4mh fig. 14 - typ. switching time vs. i c t j = 150c; l = 680h; v ce = 600v, r g = 10 ? ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l = 680h; v ce = 600v, i ce = 20a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l = 680h; v ce = 600v, i ce = 20a; v ge = 15v fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 20406080100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 0 25 50 75 100 125 rg ( ? ) 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 e n e r g y ( j ) e off 0 20 40 60 80 100 120 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) td off t f fig. 13 - typ. energy loss vs. i c t j = 150c; l = 680h; v ce = 600v, r g = 10 ? ; v ge = 15v 0 1020304050 i c (a) 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 e n e r g y ( j ) e off 0 10 20 30 40 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) td off t f

fig 19. maximum transient thermal impedance, junction-to-case (igbt) fig. 20. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.017 0.000013 0.218 0.000141 0.299 0.002184 0.177 0.013107 ri (c/w) i (sec) 0.00756 0.000005 0.56517 0.000677 0.54552 0.003514 0.25085 0.019551 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4

fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - switching loss circuit fig.c.t.4 - bvces filter circuit fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.3 v cc 0 1k vcc dut l l rg 80 v dut vcc + - l rg vcc dut / driver diode clamp / dut -5v g force c sens e 100k dut 0.0075f d1 22k e force c force e sense -100 0 100 200 300 400 500 600 700 800 -0.500.511.52 time(s) v ce (v) -5 0 5 10 15 20 25 30 35 40 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf

to-247ad package is not recommended for surface mount application.

year 1 = 2001 dat e code part number int ernat ional logo rectifier assembly 56 57 irfpe30 135h line h i ndi cates "l ead- f r ee" week 35 lot code in the assembly line "h" as s emble d on ww 35, 2001 note: "p" in assembly line position example: with assembly t his is an irfpe30 lot code 5657 2x c "a" "a" e e2/2 q e2 2x l1 l d a e 2x b2 3x b lead tip see vi e w " b " b4 b a ? .010 b a a2 a1 ? .010 b a d1 s e1 thermal pad -a- ? p ? .010 b a vi e w: "b " s e ct i on: c- c, d- d, e - e (b, b2, b4) (c) base meta l plating vie w: "a" - "a"

ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. n/a (per je de c j-s t d-020d ??? ) rohs compliant yes qualification information ? qualification level indus trial ?? (per je de c je s d47f ??? guidelines ) moisture sensitivity level to-247ad

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