technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com p-channel mosfet qualified per mil-prf-19500/562 t4-lds-0113 rev. 2 (101520) page 1 of 3 devices levels 2N6804 jan jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit drain ? source voltage v ds -100 vdc gate ? source voltage v gs 20 vdc continuous drain current t c = +25c i d1 -11 adc continuous drain current t c = +100c i d2 -7 adc max. power dissipation t c = +25c p tl 75 (1) w drain to source on state resistance r ds(on) 0.3 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 0.6 w/c for t c > +25c (2) v gs = 10vdc, i d = -7a electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss -100 vdc gate-source voltage (threshold) v ds v gs , i d = -0.25ma v ds v gs , i d = -0.25ma, t j = +125c v ds v gs , i d = -0.25ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 -2.0 -1.0 -4.0 -5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = -80v v gs = 0v, v ds = -80v, t j = +125c i dss1 i dss2 -25 -0.25 adc madc static drain-source on -state resistance v gs = -10v, i d = -7a pulsed v gs = -10v, i d = -11a pulsed t j = +125c v gs = -10v, i d = -7a pulsed r ds(on)1 r ds(on)2 r ds(on)3 0.3 0.36 0.55 diode forward voltage v gs = 0v, i d = -11a pulsed v sd -4.7 vdc 2N6804 to-204aa (to-3)
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0113 rev. 2 (101520) page 2 of 3 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: q g(on) q gs q gd nc on-state gate charge gate to source charge gate to drain charge v gs = -10v, i d = -11a v ds = -80v 29 7.1 21 switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = -11a, v gs = -10vdc, gate drive impedance = 7.5 , v dd = -35vdc t d(on) t r t d(off) t f 60 140 140 140 ns diode reverse recovery time di/dt 100a/s, v dd -50v, i f = -11a t rr 250 ns
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0113 rev. 2 (101520) page 3 of 3 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. these dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. measurement will be made at the seating plane. 4. the seating plane of the header shall be flat within .001 in ch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the head er and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. mounting holes shall be deburred on the seating plane side. 6. drain is electrically connected to case. 7. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 1. physical dimensions of transistor (to-204aa). dimensions symbol inches millimeters notes min max min max ch .250 .360 6.35 9.15 3 ld .038 .043 0.97 0.110 cd .875 22.23 ps .420 .440 10.67 11.18 3 ps 1 .205 .225 5.21 5.72 3 ht .060 .135 1.52 3.43 ll .312 .500 7.92 12.70 ll 1 .050 1.27 mhd .151 .161 3.84 4.09 mhs 1.177 1.197 29.90 30.40 hr .495 .525 12.57 13.34 hr 1 .131 .188 3.33 4.78 s 1 .655 .675 16.64 17.15
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