cystech electronics corp. spec. no. : c974s6r issued date : 2014.07.21 revised date : page no. : 1/ 10 mtb1k6n06s6r cystek product specification 200ma sychronous rectifier featuri ng n-mosfet and schottky diode MTB1K6N06KS6R features ? n-mos with esd gate protection ? n-mos with low on-resistance ? low v f schottky diode ? low static, switching and conduction losses ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTB1K6N06KS6R-0-t1-g sot-363 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel sot-363 MTB1K6N06KS6R environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pc s / tape & reel, 7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c974s6r issued date : 2014.07.21 revised date : page no. : 2/ 10 mtb1k6n06s6r cystek product specification absolute maximum ratings, total device (ta=25 ? c, unless otherwise specified) characteristic symbol value unit power dissipation (note) p d 200 mw power derating factor above 25 c p der 1.6 mw/ c output current i out 200 ma thermal characteristics characteristic symbol value unit junction operation and storage temperature range tj ; tstg -55 ~ +150 ? c thermal resistance, junction to ambient to air (note) r ? ja 625 ? c/w note : surface mounted on a fr-4 board with area of 1 in 0.85 in 0.062 in copper pad. sub-component device : esd pr otected n-channel mosfet (q1) (ta=25 ? c, unless otherwise specified) characteristic symbol value unit drain source voltage v dss 60 v drain gate voltage (r gs <1m ? ) v dgr 60 v gate source voltage v gss 20 v drain current continuous(v gs =10v) pulsed (tp 10s, duty cycle 1%) i d 200 ma i dm 800 continuous source current i s 200 ma sub-component device : schottky diode (d1) characteristic symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 40 v rms reverse voltage v r(rms) 28 v forward continuous current i fm 350 ma non-repetitive peak forward surge current @ t<1.0s i fsm 1.5 a
cystech electronics corp. spec. no. : c974s6r issued date : 2014.07.21 revised date : page no. : 3/ 10 mtb1k6n06s6r cystek product specification electrical characteristics (tj=25 ? c, unless otherwise noted) esd protected n-channel mosfet (q1) @ t a =25 c, unless otherwise specified symbol min. typ. max. unit test conditions static bv dss 60 - - v v gs =0v, i d =250 a ? bv dss / ? tj - 0.07 - v/ ? c reference to 25 ? c, i d =250 a v gs(th) 0.8 1.5 2.3 v v ds =v gs , i d =250 a 0.9 1.7 2.5 v ds =v gs , i d =1ma i gss - - 10 a v gs = 20v, v ds =0v i dss - - 1 v ds =60v, v gs =0v - - 10 v ds =48v, v gs =0v (tj=70 ? c) *r ds(on) - 1.8 2.5 ? v gs =5v, i d =50ma - 1.5 2 v gs =10v, i d =500ma *g fs - 300 - ms v ds =10v, i d =200ma dynamic ciss - 29 50 pf v ds =25v, v gs =0, f=1mhz coss - 4.3 25 crss - 2.9 5 t d(on) - 2.8 - ns v ds =25v, i d =500ma, v gs =10v r g =6 t r - 16 - t d(off) - 7.6 - t f - 14.4 - qg - 2.0 - nc v ds =30v, i d =500ma, v gs =10v qgs - 0.9 - qgd - 0.7 - source-drain diode *i s - - 200 ma *i sm - - 800 *v sd - 0.87 1.2 v v gs =0v, i s =300ma *trr - 12.3 - ns i f =500ma, di f /dt=100a/ s *qrr - 5.6 - nc *pulse test : pulse width ? 300 s, duty cycle ? 2% schottky barrier diode (d1) @ t a =25 c, unless otherwise specified characteristic symbol min typ max unit test conditions reverse breakdown voltage v (br)r 40 - - v i r =10 a forward voltage drop v fm - - 0.37 v i f =20ma - - 0.6 i f =200ma peak reverse current i rm - - 5 a v r =30v total capacitance c t - 41 - pf v r =0v, f=1mhz
cystech electronics corp. spec. no. : c974s6r issued date : 2014.07.21 revised date : page no. : 4/ 10 mtb1k6n06s6r cystek product specification typical characteristics, total device power derating curve 0 0.05 0.1 0.15 0.2 0.25 0 20 40 60 80 100 120 140 160 t a , ambient temperature() p d , power dissipation(w) mounted on fr-4 board typical characteristics, nmos (q1) typical output characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 012345 v ds , drain-source voltage(v) i d , drain current (a) 3.5v v gs =2.5v 3 v 4 v 5v 10v, 9v, 8v, 7v, 6v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 0.001 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance() v gs =10v v gs =4.5v v gs =2.5v v gs =3v reverse drain current vs source-drain voltage 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current (a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v
cystech electronics corp. spec. no. : c974s6r issued date : 2014.07.21 revised date : page no. : 5/ 10 mtb1k6n06s6r cystek product specification typical characteristics(cont.), nmos (q1) static drain-source on-state resistance vs gate-source voltage 0 5 10 15 20 25 30 012345678910 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance() i d =500ma drain-source on-state resistance vs junction tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =500ma r dson @tj=25c : 1.5 typ. capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma single pulse power rating, junction to ambient (note on page 2) 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =625c/w gate charge characteristics 0 2 4 6 8 10 00.511.522.5 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =30v i d =500ma
cystech electronics corp. spec. no. : c974s6r issued date : 2014.07.21 revised date : page no. : 6/ 10 mtb1k6n06s6r cystek product specification typical characteristics(cont.), nmos (q1) maximum safe operating area 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c, v gs =10v, r ja =625c/w single pulse r ds( on) limit maximum drain current vs junctiontemperature 0 0.05 0.1 0.15 0.2 0.25 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =625c/w typical transfer characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0246810 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v forward transfer admittance vs drain current 0.01 0.1 1 0.001 0.01 0.1 1 i d , drain current(a) g fs , forward transfer admittance-(s) v ds =10v pulsed ta=25c transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =625 c/w
cystech electronics corp. spec. no. : c974s6r issued date : 2014.07.21 revised date : page no. : 7/ 10 mtb1k6n06s6r cystek product specification typical characteristics, schottky barrier diode (d1) forward current vs forward voltage 0.001 0.01 0.1 1 00.20.40.60.81 forward voltage---v f (v) forward current---i f (a) tj=25, pulse width=300s, 1% duty cycle 125c 75c 25c 0c -40c reverse leakage current vs reverse voltage 0.0001 0.001 0.01 0.1 1 10 100 1000 0 10203040 reverse voltage---v r (v) reverse leakage current---i r (ma) 75 25 tj=125c 0c -40c total capacitance vs reverse voltage 0 5 10 15 20 25 30 35 40 45 50 0.1 1 10 100 reverse voltage---v r (v) total capacitance---c t (pf)
cystech electronics corp. spec. no. : c974s6r issued date : 2014.07.21 revised date : page no. : 8/ 10 mtb1k6n06s6r cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c974s6r issued date : 2014.07.21 revised date : page no. : 9/ 10 mtb1k6n06s6r cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 ? c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 ? c/second max. 3 ? c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60-120 seconds 150 ? c 200 ? c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60-150 seconds 217 ? c 60-150 seconds peak temperature(t p ) 240 +0/-5 ? c 260 +0/-5 ? c time within 5 ? c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 ? c/second max. 6 ? c/second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c974s6r issued date : 2014.07.21 revised date : page no. : 10/ 10 mtb1k6n06s6r cystek product specification sot-363 dimension dim millimeters inches dim millimeters inches min. max. min. max. min. max. min. max. a 0.900 1.100 0.035 0.043 e1 2.150 2.450 0.085 0.096 a1 0.000 0.100 0.000 0.004 e 0.650 typ 0.026 typ a2 0.900 1.000 0.035 0.039 e1 1.200 1.400 0.047 0.055 b 0.150 0.350 0.006 0.014 l 0.525 ref 0.021 ref c 0.080 0.150 0.003 0.006 l1 0.260 0.460 0.010 0.018 d 2.000 2.200 0.079 0.087 0 8 0 8 e 1.150 1.350 0.045 0.053 notes : 1 .controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . style: pin 1. gate (g_q1) pin 2. source (s_q1) pin 3. cathode (c_d1) pin 4. anode (a_d1) pin 5. not connected (nc) pin 6. drain (d_q1) marking: 6-lead sot-363 plastic surface mounted package cystek package code: s6r device code k6n date code
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