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preliminary datasheet dual 1a, 1.5mh z synchronous step-down dc-dc converter AP3427M mar. 2013 rev. 1.0 bcd semiconductor manufacturing limited 1 general description the AP3427M is a high effi ciency step-down dual channel dc-dc voltage converter. the chip operation is optimized by peak-current mode architecture with built-in synchronous power mosfet switchers. the oscillator and timing capacitors are all built-in providing an internal switching frequency of 1.5mhz that allows the use of small surface mount inductors and capacitors for portable product implementations. integrated soft start (ss), under voltage lock out (uvlo), thermal shutdown detection (tsd) and short circuit protection are designed to provide reliable product applications. the device is available in adjustable output voltage ranging from 0.6v to 0.9v in when input voltage range is from 2.5v to 5.5v, and is able to deliver up to 1a. the AP3427M is available in standard dfn-33-10 package. features ? high efficiency buck power converter ? output current: 1.0a ? low r ds(on) internal switches:200m (v in =5v) ? adjustable output voltage from 0.6v to 0.9v in ? wide operating voltage range: 2.5v to 5.5v ? built-in power switches for synchronous rectification with high efficiency ? feedback voltage: 600mv ? 1.5mhz constant frequency operation ? thermal shutdown protection ? low drop-out operation at 100% duty cycle ? input over voltage protection ? no schottky diode required applications ? post dc-dc voltage regulation ? pda and notebook computer figure 1. package type of AP3427M dfn-33-10
preliminary datasheet dual 1a, 1.5mh z synchronous step-down dc-dc converter AP3427M mar. 2013 rev. 1.0 bcd semiconductor manufacturing limited 2 pin configuration dn package dfn-33-10 figure 2. pin configuratio n of AP3427M (top view) pin description pin number pin name function 1 en1 enable signal input of channel 1, active high 2 fb1 feedback voltage of channel 1 3 vin2 power supply input of channel 2 4, 9, exposed pad gnd gnd. it should be connected to system ground 5 lx2 connected from channel 2?s power mosfet to inductor 6 en2 enable signal input of channel 2, active high 7 fb2 feedback voltage of channel 2 8 vin1 power supply input of channel 1 10 lx1 connected from channel 1?s power mosfet to inductor
preliminary datasheet dual 1a, 1.5mh z synchronous step-down dc-dc converter AP3427M mar. 2013 rev. 1.0 bcd semiconductor manufacturing limited 3 functional block diagram over current comparator bias generator saw-tooth generator oscillator soft start bandgap reference current sensing control logic buffer & dead time control logic + reverse inductor current comparator over voltage comparator modulator error amplifier - + - + - + - + en1/en2 fb1/ lx1/ vin1/ vin2 gnd 2/7 1/6 8/3 10/5 4/9 fb2 lx2 thermal shutdown figure 3. functional block diagram of AP3427M ordering information AP3427M - circuit type g1: green package tr: tape & reel dn: dfn-33-10 package temperature range part number marking id packing type dfn-33-10 -40 to 80 c AP3427Mdntr-g1 bfe tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green.
preliminary datasheet dual 1a, 1.5mh z synchronous step-down dc-dc converter AP3427M mar. 2013 rev. 1.0 bcd semiconductor manufacturing limited 4 absolute maximum ratings (note 1) parameter symbol value unit supply input voltage for the mosfet switch v in1 , v in2 0 to 6.5 v lx pin switch voltage v lx1 , v lx2 -0.3 to v in +0.3 v enable input voltage v en1 , v en2 -0.3 to v in +0.3 v lx pin switch current i lx1 , i lx2 1.8 a power dissipation (on pcb, t a =25c) p d 2.44 w thermal resistance (junction to ambient, simulation) ja 41 c/w thermal resistance (junction to case, simulation) jc 4.2 c/w operating junction temperature t j 155 c operating temperature t op -40 to 85 c storage temperature range t stg -55 to 150 c esd (human body model) v hbm 2000 v esd (machine model) v mm 200 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply input voltage v in 2.5 5.5 v operating junction temperature t j -40 125 c ambient temperature t a -40 80 c
preliminary datasheet dual 1a, 1.5mh z synchronous step-down dc-dc converter AP3427M mar. 2013 rev. 1.0 bcd semiconductor manufacturing limited 5 electrical characteristics t a =25c, v in =v in1 =v in2 =5v, v en1 =v en2 =5v, v fb1 =v fb2 =0.6v, l1=l2=2.2 h, c in1 =c in2 =4.7 f, c out1 =c out2 =10 f, i max =1a per channel, unless otherwise specified. parameter symbol conditions min typ max units input voltage range v in v in =v in1 =v in2 2.5 5.5 v shutdown current i off v en1 =v en2 =0 0.1 1 a active current i on v fb1 =v fb2 =0.7v, i out1 =i out2 =0a 220 a regulated feedback voltage v fb for adjustable output voltage 0.588 0.6 0.612 v regulated output voltage accuracy v out /v out v in =2.5v to 5.5v, i out1 or i out2 =0 to 1a -3 3 % peak inductor current i pk 1.5 a oscillator frequency f osc v in =2.5v to 5.5v 1.2 1.5 1.8 mhz pmosfet r ds(on) r ds(on)p v in =5v 200 m nmosfet r ds(on) r ds(on)n v in =5v 200 m en high-level input voltage v en_h 1.5 v en low-level input voltage v en_l 0.4 v en input current i en 0.1 a soft start time t ss 400 s maximum duty cycle d max 100 % input over voltage protection v iovp 6.2 v under voltage lock out threshold v uvlo rising 2.3 v falling 2.1 hysteresis 0.2 thermal shutdown t sd hysteresis=30c 155 c
preliminary datasheet dual 1a, 1.5mh z synchronous step-down dc-dc converter AP3427M mar. 2013 rev. 1.0 bcd semiconductor manufacturing limited 6 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 10 20 30 40 50 60 70 80 90 100 output current (ma) efficiency (%) v in = 3.3v v out = 1.0v v out = 1.2v v out = 1.8v typical performance characteristics 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 10 20 30 40 50 60 70 80 90 100 output current (ma) efficiency (%) v in = 5.0v v out = 1.0v v out = 1.2v v out = 1.8v v out = 2.5v v out = 3.3v figure 4. efficiency vs. output current (v in =5v) figure 5. efficiency vs. output current (v in =3.3v) figure 6. regulated feedback voltage vs. temperature figure 7. oscillator frequency vs. temperature -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1.30 1.32 1.34 1.36 1.38 1.40 1.42 1.44 1.46 1.48 1.50 1.52 1.54 temperature ( o c) oscillator frequency (mhz) -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.590 0.592 0.594 0.596 0.598 0.600 0.602 0.604 0.606 0.608 0.610 temperature ( o c) regulated feedback voltage (v)
preliminary datasheet dual 1a, 1.5mh z synchronous step-down dc-dc converter AP3427M mar. 2013 rev. 1.0 bcd semiconductor manufacturing limited 7 v out_ac 10mv/div v sw 2v/div i l 1a/div i l 1a/div v en 5v/div v sw 5v/div v out 1v/div i l 1a/div v sw 5v/div v out 1v/div i l 1a/div v out_ac 10mv/div v en 5v/div typical performance characteristics (continued) figure 8. output ripple (v out =1.2v , i out =1a) figure 9. output ripple (v out =3.3v , i out =1a) figure 10. enable turn on (i out =1a) figure 11. enable turn off (i out =1a) v sw 2v/div time (400ns/div) time (400ns/div) time (400 s/div) time (200 s/div)
preliminary datasheet dual 1a, 1.5mh z synchronous step-down dc-dc converter AP3427M mar. 2013 rev. 1.0 bcd semiconductor manufacturing limited 8 v out 1v/div v out 1v/div v sw 5v/div v sw 5v/div i l 2a/div i l 2a /d i v typical performance characteristics (continued) figure 12. short circuit protection (i out =1a) figure 13. shor t circuit protection recovery (i out =1a) time (400 s/div) time (400 s/div)
preliminary datasheet dual 1a, 1.5mh z synchronous step-down dc-dc converter AP3427M mar. 2013 rev. 1.0 bcd semiconductor manufacturing limited 9 typical application v in = 2.5 v to 5.5v c in2 4.7f r1 r2 c out1 10 f l1 2.2h c1 option v out1 AP3427M gnd fb1 lx1 en1 vin2 lx2 en2 gnd fb2 vin1 110 9 8 7 4 56 2 3 connected to v in c in1 4.7f r3 r4 c out2 10f l2 2.2h c2 option v out2 note 2: v out1 =v fb1 (1+r 1 /r 2 ) ; v out2 =v fb2 (1+r 3 /r 4 ), and r2=r4=10k is recommended. figure 14. typical application of AP3427M (note 2)
preliminary datasheet dual 1a, 1.5mh z synchronous step-down dc-dc converter AP3427M mar. 2013 rev. 1.0 bcd semiconductor manufacturing limited 10 mechanical dimensions dfn-33-10 unit: mm(inch) 2.900(0. 114) 3.100(0.122) 2.900(0. 114) 3.100(0. 122) 1.600(0. 063) 1.800(0. 071) 0.200(0. 008) 0.300(0. 012) 0.500(0. 020) typ 0.300(0. 012) 0.500(0. 020) 0.000(0. 000) 0.050(0. 002) 0.700(0.028) 0.800(0. 031) 0.153(0. 006) 0.253(0. 010) 2.300(0. 090) 2.500(0. 098) n1 n5 n6 n10 pin 1 mark pin #1 identification see detail a 1 2 detail a 1 2 1 2 pin 1 options
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yishan road, shanghai 200233, china tel: +021-6485-1491, fa x: +86-021-5450-0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manu facturing co., ltd., shenzhen office unit a room 1203,skyworth bldg., gaoxin ave.1.s., nanshan district shenzhen 518057, china tel: +86-0755-8660-4900, fax: +86-0755-8660-4958 taiwan office (taipei) bcd semiconductor (taiwan) company limited 3f, no.17, lane 171, sec. 2, jiu-zong rd., ne i-hu dist., taipei(114), taiwan, r.o.c tel: +886-2-2656 2808 fax: +886-2-2656-2806/26562950 taiwan office (hsinchu) bcd semiconductor (taiwan) company limited 8f, no.176, sec. 2, gong-dao 5th road, east district hsinchu city 300, taiwan, r.o.c tel: +886-3-5160181, fax: +886-3-5160181 - headquarters bcd (shanghai) micro-electronics limited no. 1600, zi xing road, shanghai zizhu scie nce-based industrial park, 200241, p. r.c. tel: +86-021-2416-2266, fax: +86-021-2416-2277 usa office bcd semiconductor corp. 48460 kato road, fremont, ca 94538, usa tel: +1-510-668-1950 fax: +1-510-668-1990 korea office bcd semiconductor limited korea office. room 101-1112, digital-empire ii, 486 sin-dong, yeongtong-gu, suwon-city, gyeonggi-do, korea tel: +82-31-695-8430 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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