1 tga4506 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com -40 -30 -20 -10 0 10 20 30 15 17 19 21 23 25 27 29 31 33 35 frequency (ghz) gain & return loss (db) key features ? typical frequency range: 20 - 27 ghz ? 21 db nominal gain ? 2.2 db nominal noise figure ? 12 dbm nominal p1db ? bias 3.5 v, 60 ma ? 0.15 um 3mi phemt technology ? chip dimensions 1.2 x 0.8 x 0.1 mm (0.047 x 0.031 x 0.004) in primary applications ? point-to-point radio ? point-to-multipoint radio ? lmds preliminary measured data bias conditions: vd = 3.5 v, id = 60 ma orl gain irl 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 frequency (ghz) noise figure k band low noise amplifier datasheet subject to change without notice
2 tga4506 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1 / symbol parameter value notes vd drain voltage 5 v 2/ vg gate voltage range -1 to +0.5 v id drain current 190 ma 2 / 3 / ? ig ? gate current 6 ma 3 / p in input continuous wave power 12 dbm p d power dissipation 0.95 w 2 / 4 / t ch operating channel temperature 200c 5 / 6 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / total current for the entire mmic. 4/ when operated at this bias condition with a base plate temperature of 70 c, the median life is reduced to 1.9e3 hrs. 5/ junction operating temperature will directly affect the device me dian time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet.
3 tga4506 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii electrical characteristics (ta = 25 0 c nominal) parameter typical units drain voltage, vd 3.5 v drain current, id 60 ma gate voltage, vg -0.5 to 0 v small signal gain, s21 21 db input return loss, s11 15 db output return loss, s22 11 db noise figure, nf 2.2 db output power @ 1 db compression gain, p1db 12 dbm table ii dc probe tests (ta = 25 0 c nominal) symbol parameter minimum maximum value v p3 pinch-off voltage -1.0 -0.1 v q3 is 300 um fet
4 tga4506 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv thermal information parameter test conditions t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to case) vd = 3.5 v id = 60 ma pdiss = 0.21 w 98 133 7.2e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 tga4506 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 8 10 12 14 16 18 20 22 24 15 17 19 21 23 25 27 29 31 33 35 frequency (ghz) gain (db) measured data bias conditions: vd = 3.5 v, id = 60 ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 frequency (ghz) noise figure
6 tga4506 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com -40 -35 -30 -25 -20 -15 -10 -5 0 15 17 19 21 23 25 27 29 31 33 35 fr e que nc y ( ghz ) input return loss (db) measured data bias conditions: vd = 3.5 v, id = 60 ma -40 -35 -30 -25 -20 -15 -10 -5 0 15 17 19 21 23 25 27 29 31 33 35 fr e que nc y ( ghz ) output return loss (db)
7 tga4506 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 5 7 9 11 13 15 17 19 21 23 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 pin (dbm) pout (dbm), gain (db) 55 60 65 70 75 80 85 90 95 100 ids (ma ) measured data bias conditions: vd = 3.5 v, id = 60 ma, freq @ 24 ghz pout gain ids
8 tga4506 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. . .00 [0.000] .09 [0.004] .09 [0.003] .21 [0.008] .22 [0.009] .74 [0.029] .88 [0.035] .98 [0.038] 1.21 [0.048] .49 [0.019] .74 [0.029] .93 [0.037] .00 [0.000] .08 [0.003] .09 [0.004] .41 [0.016] .48 [0.019] .73 [0.029] .82 [0.032] units: millimeters [inches] thickness: 0.10 [0.004] (reference only) chip edge to bond pad dimensions are shown to center of bond pads. chip size tolerance: 0.05 [0.002] rf ground through backside bond pad #1 bond pad #2 bond pad #3 bond pad #4 bond pad #5 bond pad #6 bond pad #7 bond pad #8 bond pad #9 bond pad #10 bond pad #11 rf input n/c vg1 vg2 n/c n/c rf output n/c vd vd vd 0.11 x 0.19 0.08 x 0.08 0.08 x 0.08 0.08 x 0.08 0.08 x 0.08 0.08 x 0.08 0.11 x 0.19 0.09 x 0.08 0.09 x 0.08 0.09 x 0.08 0.10 x 0.10 [0.004 x 0.007] [0.003 x 0.003] [0.003 x 0.003] [0.003 x 0.003] [0.003 x 0.003] [0.003 x 0.003] [0.004 x 0.007] [0.004 x 0.003] [0.004 x 0.003] [0.004 x 0.003] [0.004 x 0.004] 1 2 3 4 5 6 7 8 1.12 [0.044] 9 10 11
9 tga4506 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com chip assembly diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. vd vg rf in rf out all three vd pads (pad # 9, 10, 11 from mechanical drawing) do not need to be connected
10 tga4506 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 ? c.
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