leshan radio company, ltd. 1 3 2 LMBT6427LT1G 2 emitter 3 collector 1 base case 318?08, style 6 sot?23 (to?236ab) darlington transistors npn silicon maximum ratings rating symbol v alue unit collector?emitter voltage v ceo 40 vdc collector?base voltage v cbo 40 vdc emitter?base voltage v ebo 12 vdc collector current ? continuous i c 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking LMBT6427LT1G = 1v electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage(3) v (br)ceo 40 ? vdc (i c = 10 madc, v be = 0) collector?base breakdown voltage v (br)cbo 40 ? vdc (i c = 100 adc, i e = 0) emitter?base breakdown voltage v (br)ebo 12 ? vdc (i e = 10 adc, i c = 0) collector cutoff current i ces ? 1.0 adc ( v ce = 25vdc, i b = 0) collector cutoff current i cbo ? 50 nadc ( v cb = 30vdc, i e = 0) emitter cutoff current i ebo ? 50 nadc ( v eb = 10vdc, i c = 0) 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. z . ordering information device marking shipping LMBT6427LT1G 1v 3000/tape&reel 10000/tape&reel lmbt6427lt3g 1v we declare that the material of product compliance with rohs requirements. rev.o 1/6
leshan radio company, ltd. LMBT6427LT1G electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ?? (i c = 10 madc, v ce = 5.0 vdc) 10,000 100,000 (i c = 100 madc, v ce = 5.0vdc) 20,000 200,000 (i c = 500 madc, v ce = 5.0vdc) 14,000 140,000 collector?emitter saturation voltage v ce(sat) (3) vdc (i c = 50 madc, i b = 0.5 madc) ?? 1.2 (i c = 500 madc, i b = 0.5 madc) ?? 1.5 base?emitter saturation voltage v be(sat) ?? 2.0 vdc (i c = 500 madc, i b = 0.5 madc) base?emitter on voltage v be(on) ? 1.75 vdc (i c = 50 madc, v ce = 5.0vdc) small?signal characteristics output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ?? 7.0 pf input capacitance c ibo ?? 15 pf (v eb =0.5 vdc, i c = 0 , f = 1.0 mhz) current gain?high frequency |h fe | 1.3 ? vdc (v ce = 5.0 vdc, i c = 10madc, f = 100 mhz) noise finure nf ? 10 db (v ce =5.0 vdc, i c = 1.0 madc , r s =100 k ?, f = 1.0 khz ) 3. pulse tent: pulse width = 300 s, duty cycle = 2.0% r s i n e n ideal transistor figure 1. transistor noise model rev.o 2/6
leshan radio company, ltd. bandwidth = 1.0 hz r s 0 noise characteristics (v ce = 5.0 vdc, t a = 25c) f, frequency (hz) figure 2. noise voltage f, frequency (hz) figure 3. noise current r s , source resistance (k ? ) figure 4. total wideband noise voltage r s , source resistance (k ? ) figure 5. wideband noise figure i c = 1.0 ma 100 a 10 a bandwidth = 1.0 hz i c = 1.0 ma 100 a 10 a e n , voltage (nv) bandwidth = 10 hz to 15.7 khz i n , noise current (pa) i c = 10 a 100 a 1.0 ma bandwidth = 10 hz to 15.7 khz 10 a 100 a i c = 1.0 ma nf, noise figure (db) v t , total wideband noise voltage (nv) 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 500 200 100 50 20 10 5.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 1.0 2.0 5.0 10 20 50 100 200 500 1000 200 100 70 50 30 20 10 1.0 2.0 5.0 10 20 50 100 200 500 1000 14 12 10 8.0 6.0 4.0 2.0 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k ~ ~ LMBT6427LT1G rev.o 3/6
leshan radio company, ltd. t j = 25c small?signal characteristics v r , reverse voltage (volts) figure 6. capacitance c, capacitance (pf) |h fe |, small? signal current gain h fe , dc current gain v ce , collector? emitter voltage (volts) v, voltage (volts) r v , temperature coefficients (mv/c) i c , collector current (ma) figure 10. ?on? voltages i c , collector current (ma) figure 7. high frequency current gain i c , collector current (ma) figure 8. dc current gain i b , base current ( a) figure 9. collector saturation region i c , collector current (ma) figure 11. temperature coefficients c ibo c obo v ce = 5.0 v f = 100 mhz t j = 25c t j = 125c 25c ?55c v ce = 5.0 v t j = 25c i c = 10 ma 50 ma 250 ma 500 ma v be(sat) @ i c /i b = 1000 t j = 25c v be(on) @ v ce = 5.0 v v ce(sat) @ i c /i b = 1000 25c to 125c ?55c to 25c *r vc for v ce(sat) vb for v be 25c to 125c ?55c to 25c *applies for i c / i b < h fe /3.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 3.0 2.5 2.0 1.5 1.0 0.5 0.5 1.0 2.0 5.0 10 20 50 100 200 500 4.0 2.0 1.0 0.8 0.6 0.4 0.2 5.0 7.0 10 20 30 50 70 100 200 300 500 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 200 300 500 1.6 1.4 1.2 1.0 0.8 0.6 5.0 7.0 10 20 30 50 70 100 200 300 500 ?1.0 ?2.0 ?3.0 ?4.0 ?5.0 ?6.0 LMBT6427LT1G rev.o 4/6
leshan radio company, ltd. figure a r (t), transient thermal resistance (normalized) t, time (ms) figure 12. thermal response d = 0.5 design note: use of transient thermal resistance data 0.2 0.1 0.05 single pulse single pulse z jc(t) = r(t) r jc t j(pk) ? t c = p (pk) z jc(t) z ja(t) = r(t) r ja t j(pk) ? t a = p (pk) z ja(t) t p p p p p t 1 1/f duty cycle =t 1 f = t 1 t p peak pulse power = p p 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 LMBT6427LT1G rev.o 5/6
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. LMBT6427LT1G rev.o 6/6
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